Microstructure control of low-resistivity tin-doped indium oxide films grown by photoreaction of nanoparticles using a KrF excimer laser at room temperature

A tin-doped indium oxide (ITO) film on a SiO₂ substrate was prepared by photo-irradiation of spin-coated nanoparticles using a Xe excimer lamp and a KrF excimer laser. The effects of the excimer lamp and the excimer laser on the resistivity, mobility, and carrier concentration of the film were investigated. To better understand how to control the microstructure of the film, we investigated the effect of thickness on the resistivity of a film prepared by the two-step process, and found that the resistivity was higher in a thicker film. Using two-step irradiation plus one-step KrF irradiation in N₂ at room temperature, we produced an ITO film with lowest resistivity of any in this study. The electrical resistivity of this film was 5.94×10⁻⁴ Ω cm. On the other hand, when using a simple thermal process, the resistivity of a film sintered at 500°C in N₂ was 4.10×10⁻³ Ω cm. The differences in resistivity are discussed on the basis of the microstructure of the films using atomic force microscopy and Hall measurements.     

Laser-induced site-selective silver seeding on polyimide for electroless copper plating

Ag particles were generated on Ag⁺-doped polyimide film by laser direct writing, followed by selective copper deposition using the metallic silver particles as seeds. Laser irradiation caused in situ reduction and agglomeration of silver on the polyimide film. The copper lines were less uniform and compact with higher scanning velocity and the width of the deposited copper line could reach 25 μm. Equations of the relationship between scanning velocity and connectivity of the deposited copper patterns have been derived. The process was characterised by AFM, XPS, SEM, and semiconductor characterisation system.     

Nonlinear optical properties of nanometer-size silver composite azobenzene containing polydiacetylene film

Diacetylene monomer containing p-nitrophenyl azobenzene moiety (NADA) was synthesized. Silver nanoparticles with different concentrations were adulterated in the above polymerized NADA (PNADA) films and the third-order nonlinear optical properties were investigated in detail. UV–vis spectra and transmission electron microscopy were used to confirm the formation of PNADA/Ag nanocomposite films. The silver nanoparticles (average size of 10 nm) were well dispersed in the polymer films. The value of the nonlinear refractive index n ₂ for PNADA films (8.48×10⁻¹⁵ cm²/W) was much higher than that of pure polydiacetylene films. Further, the introduction of silver nanoparticles into the PNADA polymer films led to the further enhancement of nonlinear optical properties. The maximum value of n ₂ for PNADA/Ag nanocomposite films could be 11.6×10⁻¹⁵ cm²/W. This enhancement should be ascribed to the surface plasmon resonance of silver nanoparticles.     

Electrohydrodynamic micropatterning of silver ink using near-field electrohydrodynamic jet printing with tilted-outlet nozzle

This paper introduces for the first time near-field electrohydrodynamic jet printing with tilted-outlet nozzle to obtain the fine and highly conductive patterns of silver (Ag) ink. Line widths produced by near-field electrohydrodynamic jet printing are less than 6 μm, which is approximately twenty times smaller than that of inkjet printing. Under optimized Ag ink annealing ranges 3–9 min for 30 wt% at 150°C, we observed Ag line pattern resistivities as low as 7×10⁻⁶ Ω⋅cm. Ag ink conduction mechanisms were brought to light from microstructure analysis and post-thermal-annealing examination of electrical characteristics.     

Characterization of silver nanomeshes generated by laser-induced photoreduction from a solid silver nitrate thin film

This study characterizes electrical properties of silver thin films with meshed nanostructures fabricated through the photoreduction of solid silver nitrate thin films using excimer laser irradiation. Variations of mesh morphology as functions of laser irradiation time and fluences are examined; and the relationship between the film’s electrical resistance and mesh structure are addressed. The course of nanomesh formation can be separated into two main phases: precipitation of silver nanoparticles as a result of photoreduction; and, formation of mesh nanostructures through the photothermal effect. The resulting electrical resistance depends strongly on the mesh nanostructure. With a suitable arrangement of laser fluence and irradiation time, silver thin films with well interconnected nanomeshes can be fabricated. Results show that silver thin films with low electrical resistivity, down to 8.5×10⁻⁸ Ω m, are easily obtainable. The laser reduction approach takes advantage of the flexibility in local patterning. Moreover, the reduction is from a solid silver nitrate thin film and is executed in the ambient environment that renders this approach a potential method for low-temperature fabrication of metallic electrode conductors for organic electronics.     

Preparation of triethylamine stabilized silver nanoparticles for low-temperature sintering

In this article, silver nanoparticles were synthesized by chemical reduction from silver nitrate using triethylamine as the protecting and reducing agents simultaneously. The average size of the silver nanoparticles was about 2.10–4.65 nm, which allowed low-temperature sintering of the metal. X-ray diffraction (XRD), thermogravimetric analysis (TGA), and energy dispersive spectrometric (EDS) analysis results indicate that silver nitrate has been converted to silver nanoparticles completely. Using a 20 wt% silver nanoparticles suspension with thermal treatment at 150 °C, silver films with a resistivity of 8.09 × 10⁻⁵ Ω cm have been produced, which is close to the resistivity of bulk silver.     

Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75×10⁻² Ω cm, exhibiting a factor of 10⁵ higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors.     

Effects of deposition temperature and post-annealing on structure and electrical properties in (La<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>)CoO<Subscript>3</Subscript> films grown on silicon substrate

(La_0.5Sr_0.5)CoO₃ (LSCO) thin films have been fabricated on silicon substrate by the pulsed laser deposition method. The effects of substrate temperature and post-annealing condition on the structural and electrical properties are investigated. The samples grown above 650°C are fully crystalline with perovskite structure. The film deposited at 700°C has columnar growth with electrical resistivity of about 1.99×10⁻³ Ω cm. The amorphous films grown at 500°C were post-annealed at different conditions. The sample post-annealed at 700°C and 10⁻⁴ Pa has similar microstructure with the sample in situ grown at 700°C and 25 Pa. However, the electrical resistivity of the post-annealed sample is one magnitude higher than that of the in situ grown sample because of the effect of oxygen vacancy. The temperature dependence of resistivity exhibits semiconductor-like character. It was found that post-annealing by rapid thermal process will result in film cracks due to the thermal stress. The results are referential for the applications of LSCO in microelectronic devices.     

The nonlinear optical property and photoinduced anisotropy of?a?novel azobenzene-containing fluorinated polyimide

A novel azobenzene-containing fluorinated polyimide was synthesized. The nonlinear optical property and photoinduced birefringence of a polyimide thin film were investigated. Large third-order nonlinear refraction (n ₂=−4.49×10⁻¹¹ cm²/W) was observed in the polyimide thin film by carrying out Z-scan measurement. The polyimide thin film exhibited larger nonlinear refraction than that of a mono-azo dye doped PMMA thin film (n ₂=−1.63×10⁻¹² cm²/W). The photoinduced birefringence of the polyimide thin film (▵ n∼10⁻²) under different pump intensities was investigated; it was much larger than that of the mono-azo dye doped PMMA thin film (▵ n∼10⁻³). Moreover, the time constants for birefringence growth and relaxation processes were determined.     

Characteristics of p-type ZnO:As thin films prepared by the ampoule-tube method and ZnO p–n homojunction

A p-type ZnO thin film was prepared using arsenic diffusion via the ampoule-tube method. This was followed by fabrication of a ZnO p–n homojunction using n-type ZnO and characterization of the device properties. The ZnO thin film exhibited p-type characteristics, with a resistivity of 2.19×10⁻³ Ω cm, a carrier concentration of 1.73×10²⁰/cm³, and a mobility of 26.7 cm²/V s. Secondary ion mass spectrometer analysis confirmed that in- and out-diffusion occurred simultaneously from the external As source and the GaAs substrate. The device exhibited the rectification characteristics of a typical p–n junction; the forward voltage at 20 mA was approximately 5.5 V. The reverse-bias leakage current was very low—0.1 mA for −10 V; the breakdown voltage was −11 V. The ampoule-tube method for fabricating p-type ZnO thin films may be useful in producing ultraviolet ZnO LEDs and other ZnO-based devices.     

Preparation and characterization of transparent conducting Zn−Sn−O films deposited on organic substrates at low temperature

Transparent conducting Zn−Sn−O films were deposited on Polypropylene adipate thin-film substrates at low temperature by r. f. magnetron sputtering. The structural, electrical and optical properties of the deposited films were investigated. All the obtained films are of amorphous structure and have a very good adhesion to the substrates. The resistivity, carrier concentration and Hall mobility of the film are 1.3×10⁻² Ω·cm, 4.1×10¹⁹ cm⁻³ and 12.4 cm²· V⁻¹· s⁻¹, respectively. The transmittance of the film reaches 82%.     

SnO2 thin films grown by pulsed Nd:YAG laser deposition

SnO₂ thin films have been deposited on glass substrates by pulsed Nd:YAG laser at different oxygen pressures, and the effects of oxygen pressure on the physical properties of SnO₂ films have been investigated. The films were deposited at substrate temperature of 500°C in oxygen partial pressure between 5.0 and 125 mTorr. The thin films deposited between 5.0 to 50 mTorr showed evidence of diffraction peaks, but increasing the oxygen pressure up to 100 mTorr, three diffraction peaks (110), (101) and (211) were observed containing the SnO₂ tetragonal structure. The electrical resistivity was very sensitive to the oxygen pressure. At 100 mTorr the films showed electrical resistivity of 4×10⁻² Ω cm, free carrier density of 1.03×10¹⁹ cm⁻³, mobility of 10.26 cm² V⁻¹ s⁻¹ with average visible transmittance of ∼87%, and optical band gap of 3.6 eV.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Synthesis by pulsed laser ablation in Ar and SERS activity of silver thin films with controlled nanostructure

Thin silver films were deposited by pulsed laser ablation in a controlled Ar atmosphere and their SERS activity was investigated. The samples were grown at Ar pressures between 10 and 70 Pa and at different laser pulse numbers. Other deposition parameters such as laser fluence, target to substrate distance and substrate temperature were kept fixed at 2.0 J/cm², 35 mm and 297 K. Film morphologies were investigated by scanning and transmission electron microscopies (SEM, TEM). Surface features range from isolated nearly spherical nanoparticles to larger islands with smoothed edges. Cluster growth is favored by plume confinement induced by background gas. After landing on the substrate clusters start to aggregate giving rise to larger structures as long as the deposition goes on. Such a path of film growth allows controlling the surface morphology as a function of laser pulse number and Ar pressure. These two easy-to-manage process parameters control the number density and the average size of the as-deposited nanoparticles. We investigated the influence of substrate morphologies on their surface enhanced Raman scattering properties. Raman measurements were performed after soaking the samples in rhodamine 6G aqueous solutions over the concentration range between 1.0 × 10⁻⁴ and 5.0 × 10⁻⁸ M. The sensitivity of the film SERS activity on the surface features is put into evidence.     

A novel PEO-based composite polymer electrolyte with NaAlOSiO molecular sieves powders

Ion-conducting thin film polymer electrolytes based on poly(ethylene oxide) (PEO) complexes with NaAlOSiO molecular sieves powders has been prepared by solution casting technique. X-ray diffraction, scanning electron microscopy, differential scanning calorimeter, and alternating current impedance techniques are employed to investigate the effect of NaAlOSiO molecular sieves on the crystallization mechanism of PEO in composite polymer electrolyte. The experimental results show that NaAlOSiO powders have great influence on the growth stage of PEO spherulites. PEO crystallization decrease and the amorphous region that the lithium-ion transport is expanded by adding appropriate NaAlOSiO, which leads to drastic enhancement in the ionic conductivity of the (PEO)₁₆LiClO₄ electrolyte. The ionic conductivity of (PEO)₁₆LiClO₄-12 wt.% NaAlOSiO achieves (2.370 ± 0.082) × 10⁻⁴ S · cm⁻¹ at room temperature (18 °C). Without NaAlOSiO, the ionic conductivity has only (8.382 ± 0.927) × 10⁻⁶ S · cm⁻¹, enhancing 2 orders of magnitude. Compared with inorganic oxide as filler, the addition of NaAlOSiO molecular sieves powders can disperse homogeneously in the electrolyte matrix without forming any crystal phase and the growth stage of PEO spherulites can be hindered more effectively.     

Fluorescence Enhancement of the Silver Nanoparticales – Curcumin - Cetyltrimethylammonium Bromide-nucleic Acids System and its Analytical Application

It is found that silver nanoparticles (AgNPs) can further enhance the fluorescence intensity of curcumin (CU) - cetyltrimethylammonium bromide (CTAB) – nucleic acids and improve its anti-photobleaching activity. Under optimum conditions, the enhanced fluorescence intensity is proportion to the concentration of nucleic acids in the range of 2.0 × 10⁻⁸–1.0 × 10⁻⁶ g mL⁻¹ for fish sperm DNA (fsDNA), 2.0 × 10⁻⁸–1.0 × 10⁻⁶ g mL⁻¹ for calf thymus DNA (ctDNA), 1.0 × 10⁻⁸–1.0 × 10⁻⁶ g mL⁻¹ for yeast RNA (yRNA), and their detection limits (S/N = 3) are 8.0 ng mL⁻¹, 10.5 ng mL⁻¹ and 5.8 ng mL⁻¹, respectively. This method is used for determining the concentration of DNA in actual sample with satisfactory results. The interaction mechanism is also studied.     

Charge transport across bulk heterojunction organic thin film

The transport of charges in organic photo-active film has been the focus of tremendous research in the past few decades with the view to understand the physics of the polymers. Bulk heterojunction type devices are particularly more interesting because of their high power conversion efficiency. We have fabricated organic PV cell based on sandwich type ITO/PEDOT:PSS/APFO green-6:PCBM/LiF/Al device structure. The space charge limited currents were investigated to be able to derive important transport parameters of the devices. The measured current agrees very well with trap free space charge limited transport theory. The zero field mobility and field activation factor found from the data were μ ₀=(3.39±0.2)×10⁻⁶ m²/V sec and γ=(8.3±0.3)×10⁻⁴ (m/V)^1/2, respectively.     

Hardnes and resistivity of amorphous carbon thin films deposited by laser ablation

Amorphous carbon thin films were deposited by laser ablation of a graphite target, using the fundamental line of a 5 ns Nd:YAG laser. Deposition was carried out as a function of the plasma parameters (mean kinetic ion energy and plasma density), determined by means of a planar probe. In the selected working regimes the optical emission from the plasma is mainly due to atomic species, namely C⁺ (426.5 nm); however, there is also emission from other atomic species and molecular carbon. The hardness and resistivity could be varied in the range between 10 and 25 GPa, and 10⁸ and 10¹¹ Ω cm, respectively. The maximum values were obtained at a 200 eV ion energy and 6×10¹³ cm⁻³ plasma density, where the maximum quantity of C–C sp³ bonds was formed, as confirmed by Raman spectroscopy.     

Effect of Host Medium on the Fluorescence Emission Intensity of Rhodamine B in Liquid and Solid Phase

In this work, we study the effect of concentration, host medium, PH and phase states on the fluorescence emission from the laser dye Rhodamine B pumped by UV laser as exited source. The polymethylmethacrylate PMMA is used as a host medium in case of solid phase samples while, ethanol and Tetrahydrofuran (THF) are used in case of a liquid one. Laser Induced Fluorescence (LIF) technique was used to study the fluorescence properties of both cases of liquid and thin film solid-state samples. In addition, the Dual Thermal Lens (DTL) technique was used to study the quantum yield of these samples. The concentrations of Rhodamine B in ethanol as solvent between 2 × 10⁻² M and 5 × 10⁻⁶ M were studied. The maximum fluorescence emission is observed at concentration of Rhodamine B C = 3 × 10⁻⁴ M. Comparison studies were investigated for different host medium such as ethanol, THF, PMMA in liquid phase state and PMMA in solid phase state. The measurements revealed that, the behavior of both phases state was analogous. Rhodamine B/PMMA thin film sample by ratio of 4:1 and thickness 0.12 mm was found to have the best photostability sample with a quantum yield about ≈0.82.     

Thin TiO2 grown by metal–organic chemical vapor deposition on (NH4)2S x -treated InP

The electrical characteristics of thin TiO₂ films prepared by metal–organic chemical vapor deposition grown on a p-type InP substrate were studied. For a TiO₂ film of 4.7 nm on InP without and with ammonium sulfide treatment, the leakage currents are 8.8×10⁻² and 1.1×10⁻⁴ A/cm² at +2 V bias and 1.6×10⁻¹ and 8.3×10⁻⁴ A/cm² at −2 V bias. The lower leakage currents of TiO₂ with ammonium sulfide treatment arise from the improvement of interface quality. The dielectric constant and effective oxide charge number density are 33 and 2.5×10¹³ cm², respectively. The lowest mid-gap interface state density is around 7.6×10¹¹ cm⁻² eV⁻¹. The equivalent oxide thickness is 0.52 nm. The breakdown electric field increases with decreasing thickness in the range of 2.5 to 7.6 nm and reaches 9.3 MV/cm at 2.5 nm.