Nonradiative relaxation in ensembles of silicon nanocrystals

The results of calculating the lifetimes of direct electron and hole tunneling and of nonradiative exciton transport between Si nanocrystals are presented. It is shown that tunnel transitions dominate in the process of the energy exchange between quantum dots and can considerably affect radiation in the ensemble of Si nanocrystals.     

Charge storage and electron/light emission properties of silicon nanocrystals

Monodispersed silicon nanocrystals show novel electrical and optical characteristics of silicon quantum dots, such as single-electron tunneling, ballistic electron transport, visible photoluminescence and high-efficiency electron emission.Single-electron memory effects have been studied using a short-channel MOSFET incorporating Si quantum dots as a floating gate. Surface nitridation of Si nanocrystal memory nodes extends the charge-retention time significantly. Single-electron storage in individual Si dots has been evaluated by Kelvin probe force microscopy.Photoluminescence and electron emission are observed for surface-oxidized silicon nanocrystals. Efficiency of the no-phonon-assisted transition increases with decreasing core Si size. Electron emission efficiency as high as 5% has been achieved for the Si-nanocrystal-based cold electron emitter devices. The non-Maxwellian energy distribution of emitted electrons suggests that the mechanism of electron emission is due to ballistic transport through arrays of surface-oxidized Si nanocrystals. Combined with the ballistic electron emission, the quasi-direct light emission properties can be used for developing Si-based lasers.     

Current control in periodically driven quantum dots using nonadiabatic double crossing

The purpose of this Letter is to propose a method for controlling electron currents on quantum dots driven by an oscillating electric field. The effects of nonadiabatic transition on time-averaged currents are theoretically studied in dot systems where energy levels exhibit a double crossing within one period of the driving field. The current is enhanced or suppressed as a result of the constructive or destructive interference between different transition paths at a double crossing. The current also depends on the number of dots because of the presence of dot-lead coupling.     

Transport spectroscopy of an impurity spin in a carbon nanotube double quantum dot

We make use of spin selection rules to investigate the electron spin system of a carbon nanotube double quantum dot. Measurements of the electron transport as a function of the magnetic field and energy detuning between the quantum dots reveal an intricate pattern of the spin state evolution. We demonstrate that the complete set of measurements can be understood by taking into account the interplay between spin-orbit interaction and a single impurity spin coupled to the double dot. The detection and tunability of this coupling are important for quantum manipulation in carbon nanotubes.     

Intersubband,interband transitions,and optical properties of two vertically coupled hemispherical quantum dots with wetting layers

The electron and heavy hole energy levels of two vertically coupled In As hemispherical quantum dots/wetting layers embedded in a Ga As barrier are calculated numerically. As the radius increases, the electronic energies increase for the small base radii and decrease for the larger ones. The energies decrease as the dot height increases. The intersubband and interband transitions of the system are also studied. For both, a spectral peak position shift to lower energies is seen due to the vertical coupling of dots. The interband transition energy decreases as the dot size increases, decreases for the dot shapes with larger heights, and reaches a minimum for coupled semisphere dots.     

Electron-spin manipulation and resonator readout in a double-quantum-dot nanoelectromechanical system

We demonstrate how magnetically coupling a nanomechanical resonator to a double quantum dot confining two electrons can enable the manipulation of a single electron spin and the readout of the resonator's natural frequency. When the Larmor frequency matches the resonator frequency, the electron spin in one of the dots can be selectively and coherently flipped by the magnetized oscillator. By simultaneously measuring the charge state of the two-electron double quantum dots, this transition can be detected thus enabling the natural frequency and displacement of the mechanical oscillator to be determined.     

硅纳米结构晶体管中与杂质量子点相关的量子输运

在小于10 nm的沟道空间中,杂质数目和杂质波动范围变得十分有限,这对器件性能有很大的影响.局域纳米空间中的电离杂质还能够展现出量子点特性,为电荷输运提供两个分立的杂质能级.利用杂质原子作为量子输运构件的硅纳米结构晶体管有望成为未来量子计算电路的基本组成器件.本文结合安德森定域化理论和Hubbard带模型对单个、分立和耦合杂质原子系统中的量子输运特性进行了综述,系统介绍了提升杂质原子晶体管工作温度的方法.     

Spin and polarized current from Coulomb blockaded quantum dots

We report measurements of spin transitions for GaAs quantum dots in the Coulomb blockade regime and compare ground and excited state transport spectroscopy to direct measurements of the spin polarization of emitted current. Transport spectroscopy reveals both spin-increasing and spin-decreasing transitions, as well as higher-spin ground states, and allows g factors to be measured down to a single electron. The spin of emitted current in the Coulomb blockade regime, measured using spin-sensitive electron focusing, is found to be polarized along the direction of the applied magnetic field regardless of the ground state spin transition.     

Spectroscopy of few-electron collective excitations in charge-tunable artificial atoms

We report the investigation of electronic excitations in InGaAs self-assembled quantum dots using resonant inelastic light scattering. The dots can be charged via a gate by N=1, em leader,6 electrons. We observe excitations, which are identified as transitions of electrons, predominantly from the s to the p shell (s-p transitions) of the quasiatoms. We find that the s-p transition energy decreases and the observed band broadens, when the p shell is filled with 1 to 4 electrons. By a theoretical model, which takes into account the full Coulomb interaction in the few-electron artificial atom, we can confirm the experimental results to be an effect of the Coulomb interaction in the quantum dot.     

Hopping conductivity and Coulomb correlations in 2D arrays of Ge/Si quantum dots

The temperature and magnetic-field dependences of the conductivity associated with hopping transport of holes over a 2D array of Ge/Si(001) quantum dots with various filling factors are studied experimentally. A transition from the Éfros-Shklovski? law for the temperature dependence of hopping conductivity to the Arrhenius law with an activation energy equal to 1.0–1.2 meV is observed upon a decrease in temperature. The activation energy for the low-temperature conductivity increases with the magnetic field and attains saturation in fields exceeding 4 T. It is found that the magnetoresistance in layers of quantum dots is essentially anisotropic: the conductivity decreases in an increasing magnetic field oriented perpendicularly to a quantum dot layer and increases in a magnetic field whose vector lies in the plane of the sample. The absolute values of magnetoresistance for transverse and longitudinal field orientations differ by two orders of magnitude. The experimental results are interpreted using the model of many-particle correlations of holes localized in quantum dots, which lead to the formation of electron polarons in a 2D disordered system.     

Cavity‐Photon‐Induced High‐Order Transitions between Ground States of Quantum Dots

It is shown that quantum electromagnetic transitions to high orders are essential to describe the time‐dependent path of a nanoscale electron system in a Coulomb blockade regime when coupled to external leads and placed in a 3D rectangular photon cavity. The electronic system consists of two quantum dots embedded asymmetrically in a short quantum wire. The two lowest in energy spin degenerate electron states are mostly localized in each dot with only a tiny probability in the other dot. In the presence of the leads, a slow high‐order transition between the ground states of the two quantum dots is identified. The Fourier power spectrum for photon–photon correlations in the steady state shows a Fano type of resonance for the frequency of the slow transition. Full account is taken of the geometry of the multilevel electronic system, and the electron–electron Coulomb interactions together with the para‐ and diamagnetic electron–photon interactions are treated with step‐wise exact numerical diagonalization and truncation of appropriate many‐body Fock spaces. The matrix elements for all interactions are computed analytically or numerically exactly.     

Synchrotron investigations of the specific features in the electron energy spectrum of silicon nanostructures

The Si L _{2, 3} x-ray absorption near-edge structure (XANES) spectra of porous silicon nanomaterials and nanostructures with epitaxial silicon layers doped by erbium or containing germanium quantum dots are measured using synchrotron radiation for the first time. A model of photoluminescence in porous silicon is proposed on the basis of the results obtained. According to this model, the photoluminescence is caused by interband transitions between the energy levels of the crystalline phase and oxide phases covering silicon nanocrystals. The stresses generated in surface silicon nanolayers by Ge quantum dots or clusters with incorporated Er atoms are responsible for the fine structure of the spectra in the energy range of the conduction band edge and can stimulate luminescence in these nanostructures.     

Transport in graphene nanostructures

Graphene nanostructures are promising candidates for future nanoelectronics and solid-state quantum information technology. In this review we provide an overview of a number of electron transport experiments on etched graphene nanostructures. We briefly revisit the electronic properties and the transport characteristics of bulk, i.e., two-dimensional graphene. The fabrication techniques for making graphene nanostructures such as nanoribbons, single electron transistors and quantum dots, mainly based on a dry etching ??paper-cutting?? technique are discussed in detail. The limitations of the current fabrication technology are discussed when we outline the quantum transport properties of the nanostructured devices. In particular we focus here on transport through graphene nanoribbons and constrictions, single electron transistors as well as on graphene quantum dots including double quantum dots. These quasi-one-dimensional (nanoribbons) and quasi-zero-dimensional (quantum dots) graphene nanostructures show a clear route of how to overcome the gapless nature of graphene allowing the confinement of individual carriers and their control by lateral graphene gates and charge detectors. In particular, we emphasize that graphene quantum dots and double quantum dots are very promising systems for spin-based solid state quantum computation, since they are believed to have exceptionally long spin coherence times due to weak spin-orbit coupling and weak hyperfine interaction in graphene.     

Spin-polarized current in double quantum dots

We analyze the transport through asymmetric double quantum dots with an inhomogeneous Zeeman splitting in the presence of crossed dc and ac magnetic fields.A strong spin-polarized current can be obtained by changing the dc magnetic field.It is mainly due to the resonant tunnelling.But for the ferromagnetic right electrode,the electron spin resonance also plays an important role in transport.We show that the double quantum dots with three-level mixing under crossed dc and ac magnetic fields can act not only as a bipolar spin filter but also as a spin inverter under suitable conditions.     

Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors

We demonstrate transitions of hopping behaviors for delocalized electrons through the discrete dopant-induced quantum dots in n-doped silicon junctionless nanowire transistors by the temperature-dependent conductance characteristics.There are two obvious transition platforms within the critical temperature regimes for the experimental conductance data,which are extracted from the unified transfer characteristics for different temperatures at the gate voltage positions of the initial transconductance gm peak in V_(g1) and valley in V_(g2). The crossover temperatures of the electron hopping behaviors are analytically determined by the temperature-dependent conductance at the gate voltages V_(g1) and V_(g2). This finding provides essential evidence for the hopping electron behaviors under the influence of thermal activation and long-range Coulomb interaction.     

Phase transition and charge transport through a triple dot device beyond the Kondo regime

Semiconductor quantum dot structure provides a promising basis for quantum information processing, within which to reveal the quantum phase and charge transport is one of the most important issues. In this paper, by means of the numerical renormalization group technique, we study the quantum phase transition and the charge transport for a parallel triple dot device in the strongly correlated limit, focusing on the effect of inter-dot hopping t beyond the Kondo regime. We find the quantum behaviors depend closely on the initial electron number on the dots, and the present model may map to single,double, and side-coupled impurity models in different parameter spaces. An orbital spin-1/2 Kondo effect between the conduction leads and the bonding orbital, and several magnetic-frustration phases are demonstrated when t is adjusted to different regimes. To understand these phenomena, a canonical transformation of the energy levels is given, and important physical quantities with respect to increasing t and necessary theoretical discussions are shown.     

Spectroscopy of molecular states in a few-electron double quantum dot

Semiconductor quantum dots, so-called artificial atoms, have attracted considerable interest as mesoscopic model systems and prospective building blocks of the “quantum computer”. Electrons are trapped locally in quantum dots, forming controllable and coherent mesoscopic atom- and moleculelike systems. Electrostatic definition of quantum dots by use of top gates on a GaAs/AlGaAs heterostructure allows wide variation of the potential in the underlying two-dimensional electron gas. By distorting the trapping potential of a single quantum dot, a strongly tunnel-coupled double quantum dot can be defined. Transport spectroscopy measurements on such a system charged with N=0,1,2,… electrons are presented. In particular, the tunnel splitting of the double well potential for up to one trapped electron is unambiguously identified. It becomes visible as a pronounced level anticrossing at finite source drain voltage. A magnetic field perpendicular to the two-dimensional electron gas also modulates the orbital excitation energies in each individual dot. By tuning the asymmetry of the double well potential at finite magnetic field the chemical potentials of an excited state of one of the quantum dots and the ground state of the other quantum dot can be aligned, resulting in a second level anticrossing with a larger tunnel splitting. In addition, data on the two-electron transport spectrum are presented.     

Adsorption of barium and rare-earth metals on silicon

The change in the work function of the Si(111) surface caused by deposition of a submonolayer film of barium has been calculated with due account of dipole-dipole adatom repulsion and metallization effects. The results of the calculations agree satisfactorily with experimental data. The character of the variation in the model parameters in the Ba-Sm-Eu-Yb series is discussed. The electron tunneling probability from an adatom quasi-level to the substrate conduction band and the energy barrier for interatomic transitions of electrons in an adlayer were estimated.     

Quantum cascade transitions in nanostructures

In this article we review the physical characteristics of quantum cascade transitions (QCTs) in various nanoscopic systems. The quantum cascade laser which utilizes such transitions in quantum wells is a brilliant outcome of quantum engineering that has already demonstrated its usefulness in various real-world applications. After a brief introduction to the background of this transition process, we discuss the physics behind these transitions in an externally applied magnetic field. This has unravelled many intricate phenomena related to intersubband resonance and electron relaxation modes in these systems. We then discuss QCTs in a situation where the quantum wells in the active regions of a quantum cascade structure are replaced by quantum dots. The physics of quantum dots is a rapidly developing field with its roots in fundamental quantum mechanics, but at the same time, quantum dots have tremendous potential applications. We first present a brief review of those aspects of quantum dots that are likely to be reflected in a quantum-dot cascade structure. We then go on to demonstrate how the calculated emission peaks of a quantum-dot cascade structure with or without an external magnetic field are correlated with the properties of quantum dots, such as the choice of confinement potentials, shape, size and the low-lying energy spectra of the dots. Contents PAGE 1 Introduction 456 2 Intersubband transitions in quantum wells 458 3 Quantum cascade transitions 462 3.1. Basic principles 462 3.1.1. Minibands and minigaps 464 3.1.2. Vertical transitions 464 3.1.3. GaAs/AlGaAs quantum cascade lasers 464 3.1.4. QCLs based on superlattice structures 465 3.1.5. Type-II quantum cascade lasers 466 3.1.6. Recent developments 466 3.2. Applications: sense-ability and other qualities 466 4 Quantum cascade transitions in novel situations 467 4.1. External magnetic field 467 4.1.1. Parallel magnetic field 468 4.1.2. Many-body effects: depolarization shift 470 4.1.3. The role of disorder 471 4.1.4. Tilted magnetic field 475 4.2. Magneto-transport experiments and phonon relaxation 479 4.3. Magneto-optics experiment and phonon relaxation 484 5 A brief review of quantum dots 485 5.1. From three- to zero-dimensional systems 485 5.2. Making the dots 487 5.2.1. Lithographic patterning 487 5.2.2. Self-assembled quantum dots 488 5.3. Shell filling in quantum dots 489 5.4. Electron correlations: spin states 490 5.5. Anisotropic dots 491 5.6. Influence of an external magnetic field 491 5.6.1. The Fock diagram 491 5.6.2. The no-correlation theorem 492 5.6.3. Correlation effects and magic numbers 492 5.6.4. Spin transitions 493 5.7. Quantum dots in novel systems 494 5.8. Potential applications of quantum dots 494 5.8.1. Single-electron transistors (SETs) 494 5.8.2. Single-photon detectors 494 5.8.3. Single-photon emitters 495 5.8.4. Quantum-dot lasers 495 6 Quantum cascade transitions in quantum-dot structures 496 6.1. Quantum dots versus quantum wells 496 6.2. QCT with rectangular dots 497 6.2.1. Vertical transitions 500 6.2.2. Diagonal transitions 501 6.3. QCT in a parabolic dot 504 6.4. Magnetic field effects on intersubband transitions 506 6.5. Mid-IR luminescence from a QD cascade device 512 7 Summary and open questions 513 Acknowledgements 515 References 515     

Coupled quantum dots: manifestation of an artificial molecule

Transport spectroscopy reveals the microscopic features of few-electron quantum dots which justify the nameartificial atoms. New physics evolve when two quantum dots are coupled by a tunneling barrier. We study, both theoretically and experimentally, the tunneling spectroscopy on a double quantum dot. A detailed lineshape analysis of the conductance resonances proves that off-resonant coherent interdot tunneling governs transport through this system, while tunneling into the double quantum dot occurs resonantly. This coherent interdot tunneling witnesses the evolution of a delocalized electronic state which can be compared to a valence electron of thisartificial molecule.