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1.
The thermomagnetic behaviour (within the temperature range 553-300 K) for the bulk composite Nd60Fe30Al10 alloy is described in terms of a transition from paramagnetic to superferromagnetic state at T=553 K, followed by a ferromagnetic ordering for T<473 K. For the superferromagnetic regime, the alloy thermomagnetic response was associated to a homogeneous distribution of magnetic clusters with mean magnetic moment and size of 1072 μB and 2.5 nm, respectively. For T<473 K, a pinning model of domain walls described properly the alloy coercivity dependence with temperature, from which the domain wall width and the magnetic anisotropy constant were estimated as being of ≈8 nm and ≈105 J/m3, typical values of hard magnetic phases. Results are supported by microstructural and magnetic domain observations.  相似文献   

2.
We report on the process of low energy N2+ implantation and annealing of a Cu(0 0 1) surface. Through AES we study the N diffusion process as a function of the substrate temperature. With STM and LEIS we characterize the surface morphology and the electronic structure is analyzed with ARUPS. Under annealing (500 < T < 700 K) N migrates to the surface and reacts forming a CuxN compound that decomposes at temperatures above 700 K. LEIS measurements show that N locates on the four-fold hollow sites of the Cu(0 0 1) surface in a c(2 × 2) arrangement. Finally, a gap along the [0 0 1] azimuthal direction is determined by ARUPS. DFT calculations provide support to our conclusions.  相似文献   

3.
IrO2 thin films were prepared on Si(1 0 0) substrates by laser ablation. The effect of substrate temperature (Tsub) on the structure (crystal orientation and surface morphology) and property (electrical resistivity) of the laser-ablated IrO2 thin films was investigated. Well crystallized and single-phase IrO2 thin films were obtained at Tsub = 573-773 K in an oxygen partial pressure of 20 Pa. The preferred orientation of the laser-ablated IrO2 thin films changed from (2 0 0) to (1 1 0) and (1 0 1) depending on Tsub. With the increasing of Tsub, both the surface roughness and crystallite size increased. The room-temperature electrical resistivity of IrO2 thin films decreased with increasing Tsub, showing a low value of (42 ± 6) × 10−8 Ω m at Tsub = 773 K.  相似文献   

4.
Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La1−xKxMnO3 polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (TC) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>TMI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<TMI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below TC is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.  相似文献   

5.
We present results of grand canonical Monte Carlo simulations of adsorption in cylindrical pores with rough surface modeled by lattice-site approach. Each site is characterized by two parameters: structural and energetic, which locally modify the structure and energy properties of the surface. There are three types of sites, randomly distributed over the wall: attractive, neutral and repulsive with respect to the smooth pore model. The results presented here show how this model affects the mechanism of adsorption and how it changes the forms of adsorption isotherm. We compare our numerical results with the experimental data of adsorption of a simple fluid (CH4, T = 77 K) in cylindrical silica pore of diameter d = 4 nm (MCM-41 material).  相似文献   

6.
In order to study the mechanism behind the phase separation scenario in the Sm0.15Ca0.85MnO3 compound, magnetization and resistivity measurements have been carried out in pulsed magnetic fields up to 50 T at temperatures 4.2 K<T<200 K. It is found that external magnetic field causes a collapse of a C-type AFM (P21/m) phase resulting in field-induced insulator-metal transition, which is irreversible below T1=75 K. In zero field the content of a G-type phase in the mixed C-G state can vary from 10 to 17% at T=10 K. A set of metastable states with different volume ratios of G-type to C-type phases is observed below T1 depending on the history of the sample. The obtained results indicate that the phase separation plays a dominant role for the electric and the magnetic properties of this material.  相似文献   

7.
We examine the ferroelectric-relaxor behavior of (Ba0.65Sr0.35)(Zr0.35Ti0.65)O3 (BSZT) ceramics in the temperature range from 80 to 380 K. A broad dielectric maximum, which shifts to higher temperature with increasing frequency, signifies the relaxor-type behavior of these ceramics. The value of the relaxation parameter γ∼2 estimated from the linear fit of the modified Curie-Weiss law, indicates the relaxor nature of the BSZT ceramics. The dielectric relaxation rate follows the Vogel-Fulcher relation with TVF=107 K, Ea=0.121 eV, and ν0=6.83×1014 Hz, further supports such relaxor nature. The slim P-E hysteresis loop and ‘butterfly’ shape dc bias field dependence of permittivity at T>Tm (Tm, the temperature of permittivity maximum) clearly signifies the occurrence of nanopolar clusters, which is the typical characteristic of ferroelectric relaxor. At 300 K and 10 kHz, the dielectric constant and loss tan δ are ∼1100 and 0.0015, respectively. The high tunability (∼25%) and figure of merit (∼130) at room temperature show that the BSZT ceramics could be a promising candidate for tunable capacitor applications.  相似文献   

8.
The optical absorption and photoluminescent spectra are studied in recently synthesized diphenyl pyrazoloquinolines (DPPQ): 1,3-diphenyl-1H-pyrazolo[3,4-b] quinoline and its 6-vinyl, 6-N,N-diphenyl, 6-methyl, 6-fluoro, 6-bromo and 6-chloro derivatives. The photoemission spectra are recorded in organic solvents of different polarity and found to be highly solvatochromic. The measured spectra are compared with the quantum chemical calculations performed by means of the semiempirical methods (AM1 or PM3) in combination with the equilibrium molecular conformation (EMC) in vacuo (T = 0 K, Γ = 0.12 eV) or MD simulations (T = 300 K). The broadening of absorption and emission bands and their red-shift with increasing of temperature may be well reproduced by MD simulations. The Stokes shift of the photoluminescent spectra is obtained by including vibrational modes into the emission equation. The quantum chemical method AM1 in combination with MD simulations gives in most cases the best agreement with the experimental data. By comparing the emission spectra of 6-N,N-diphenyl-DPPQ with other DPPQ-derivatives one concludes that the molecular fragment diphenyl-amin [(C6H5)2N-] is likely subjected to strong conformational changes in solvents. The large difference between the excited- and state-dipole moments indicates on a strong electron transfer effect being common for all DPPQ derivatives.  相似文献   

9.
10.
We have studied [N(C2H5)4]2MnCl4 crystal by X-band CW EPR spectra in the temperature range 170-300 K. The angular dependences of linewidth ΔH were measured and described in the light of a double-layer system (2D) with exchange interactions. Two temperature anomalies of linewidth ΔH were found at T1=225 K and T2=192 K on cooling. Different behaviors of ΔH anomalies recorded for an external magnetic field parallel and perpendicular to the ab crystallographic plane indicate ordering/disordering of MnCl4 groups in this plane and their displacement along the c-axis which occurs in the temperature of about 225 K.  相似文献   

11.
In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, TC increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition Ts and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and Ts is ∼91 K.  相似文献   

12.
The magnetization of native horse spleen ferritin protein is measured in pulsed magnetic fields to 55 T at T=1.52 K. The magnetization rises smoothly with negative curvature due to uncompensated Fe3+ spins and with a large high field slope due to the underlying antiferromagnetic ferritin core. Even at highest fields the magnetic moment is only ∼4% of the saturation moment of the full complement of Fe3+ in the ferritin molecule. The AC magnetic susceptibility, χAC(T,f), responding to the uncompensated spins, reaches a maximum near the superparamagnetic blocking temperature with the temperature of the maximum, TM, varying with excitation frequency, TM−1 α log f for 10?f?104 Hz.  相似文献   

13.
Dielectric permittivities (ε′,ε″) have been measured as functions of temperature (140-535 K) and frequency (500 Hz-2.0 MHz) in a (001)-cut Pb(In1/2Nb1/2)0.7Ti0.3O3 (PINT30%) single crystal grown by the modified Bridgman method with Pb(Mg1/3Nb2/3)0.71Ti0.29O3 (PMNT29%) seed crystal. A diffused phase transition was observed in the temperature region of ∼430-460 K with strong frequency dispersion. Above the Burns temperature TB≅510 K, the dielectric permittivity was found to follow the Curie-Weiss behavior, ε′=C/(TTC), with parameters C=3.9×105 and TC=472 K. Below TB≅510 K, polar nanoclusters are considered to appear and are responsible for the diffused dielectric anomaly. Optical transmission, refractive indices, and the Cauchy equations were obtained as a function of wavelength at room temperature. The unpoled crystal shows almost no birefringence, indicating that the average structural symmetry is optically isotropic. The crystal exhibits a broad transparency in the wavelength range of ∼0.4-6.0 μm.  相似文献   

14.
We have studied photoluminescence of α-MnSe in the antiferromagnetic and paramagnetic phases. Two broad, possibly multi-component emission bands centred at about 1.53 and 1.66 eV are observed at 20 K. The frequencies and intensities of these bands show step-like shift in the vicinity of TN. On the basis of difference in peak energies at T=1.8 K and TN the d-p-d superexchange interaction in excited state is estimated to be J2g(exc)=0.918 meV.  相似文献   

15.
To study the factors affecting the dielectric and piezoelectric properties of bismuth-containing complex perovskites, the solid solution (1−x)Pb(Mg1/3Nb2/3)O3-xBi(Mg2/3Nb1/3)O3 was prepared by the solid state reaction method and its dielectric and piezoelectric properties were investigated. It is found that (1) at room temperature, the nonlinearity of the DE-loop for Pb(Mg1/3Nb2/3)O3 is completely suppressed at a rather low x (<5%); (2) dielectric constant versus temperature curves deviate from the Curie-Weiss law at a temperature Td much higher than the dielectric constant peak temperature Tm and TmTd decreases considerably with increasing x; and (3) frequency dispersion ΔTm=Tm (1 MHz)−Tm (10 kHz) increases with increasing x. Possible factors responsible for the variation of the dielectric and piezoelectric properties with x are discussed.  相似文献   

16.
Angle dispersive X-ray diffraction experiments on mercuric bromide (HgBr2) under high pressure up to 11.0 GPa were carried out at room temperature using synchrotron radiation. In addition to the already known four different phases of HgBr2 in the pressure-temperature range of p<4.5 GPa, 90<T<600 K our observations show the existence of a new phase (V) above 9.0 GPa and, together with published material, support the phase transition sequence: (I) orthorhombic-(II) orthorhombic-(III) monoclinic-(IV) trigonal-(V) trigonal/hexagonal. The structure of phase IV with space group symmetry P3 has been determined from powder diffraction data. The observation of second-harmonic-generation signals confirms the absence of an inversion center. The structure of phase IV is a commensurately modulated variant of the CdI2 type layer structure, where part of the Hg atoms are displaced from the centers of the HgBr6 octahedra by a much as 0.76 Å in the direction perpendicular to the layers.  相似文献   

17.
We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2×2 to 20×20 μm2. The evaluated MgO energy barrier (0.50±0.08 eV), the barrier width (13.1±0.5 Å) as well as the resistance times area product (7±1 MΩ μm2) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (T<10 K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100 meV) and asymmetric features above 200 meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure.  相似文献   

18.
Using the functional renormalization group (FRG) we study the thermal fluctuations of elastic objects (displacement field u, internal dimension d) pinned by a random potential at low temperature T, as prototypes for glasses. A challenge is how the field theory can describe both typical (minimum energy T = 0) configurations, as well as thermal averages which, at any non-zero T as in the phenomenological droplet picture, are dominated by rare degeneracies between low lying minima. We show that this occurs through an essentially non-perturbative thermal boundary layer (TBL) in the (running) effective action Γ [u] at T > 0 for which we find a consistent scaling ansatz to all orders. The TBL describes how temperature smoothes the singularities of the T = 0 theory and contains the physics of rare thermal excitations (droplets). The formal structure of this TBL, which involves all cumulants of the coarse grained disorder, is first explored around d = 4 using a one-loop Wilson RG. Next, a more systematic exact RG (ERG) method is employed, and first tested on d = 0 models where it can be pushed quite far. There we obtain precise relations between TBL quantities and droplet probabilities (those are constrained by exact identities which are then checked against recent exact results). Our analysis is then extended to higher d, where we illustrate how the TBL scaling remains consistent to all orders in the ERG and how droplet picture results can be retrieved. Since correlations are determined deep in the TBL (by derivatives of Γ [u] at u = 0), it remains to be understood (in any d) how they can be retrieved (as u = 0+ limits in the non-analytic T = 0 effective action), i.e., how to recover a T = 0 critical theory. This formidable “matching problem” is solved in detail for d = 0, N = 1 by studying the (partial) TBL structure of higher cumulants when points are brought together. We thereby obtain the β-function at T = 0, all ambiguities removed, displayed here up to four loops. A discussion of the d > 4 case and an exact solution at large d are also provided.  相似文献   

19.
The giant magneto-optical Faraday effect (giant Faraday rotation) of ferromagnetic metal–semiconductor matrix Fe–ZnSe granular films prepared by radio frequency sputtering is studied. The result shows that the Faraday rotation angle θF value of the granular films sample with Fe volume fraction x=35% is of the order of 10°/cm at room temperature. Temperature dependence of the θF of Fe0.35(ZnSe)0.65 granular films shows that θF value, below 150 K, increases rapidly with the decrease of the temperature, and when T=10 K θF value is 6×105 °/cm. Through the study of the structure and dependence of magnetic properties on temperature, it has been found that the remarkable increase of the θF value of Fe0.35(ZnSe)0.65 granular films below 150 K seems to arise from the sp–d exchange interaction inside the granular films.  相似文献   

20.
We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS4. The electrical resistivity increased with decreasing temperature according to the exp(T0/T)1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T0 decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.  相似文献   

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