Temperature dependence of current-voltage characteristics of Sn/p-Si Schottky contacts

The current-voltage (I-V) characteristics of Sn/p-Si Schottky barrier diode have been measured over a wide range of temperature (80-300 K) and interpreted on the basis of thermionic emission mechanism by merging the concept of barrier inhomogeneities through a Gaussian distribution function. The analysis has revealed an anomalous decrease of apparent barrier height Φ_b0, increase of ideality factor n, and nonlinearity of the activation energy plot at lower temperatures. A Φ_b0 versus 1/T plot has been drawn to obtain evidence of a Gaussian distribution of barrier heights, and values of 0.97 eV and 0.084 V for the mean barrier height and standard deviation σ₀ have been obtained, respectively, from this plot. A modified ln(I₀/T²)−(q²σ₀²/2k²T²) versus 1/T plot gives and Richardson constant A** as 0.95 eV and 15.6 A cm⁻² K⁻², respectively. It can be concluded that the temperature dependent I-V characteristics of the Sn/p-Si Schottky barrier diode can be successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the barrier heights. We have also discussed whether or not the junction current has been connected with thermionic field-emission mechanism.     

The barrier height inhomogeneity in Al/p-Si Schottky barrier diodes with native insulator layer

The current-voltage (I-V) characteristics of Al/p-Si Schottky barrier diodes (SBDs) with native insulator layer were measured in the temperature range of 150-375 K. The estimated zero-bias barrier height Φ_B0 and the ideality factor n assuming thermionic emission (TE) theory show strong temperature dependence. Evaluation of the forward I-V data reveals an increase of zero-bias barrier height Φ_B0 but decrease of ideality factor n with increase in temperature. The conventional Richardson plot exhibits non-linearity below 250 K with the linear portion corresponding to activation energy of 0.41 eV and Richardson constant (A^*) value of 1.3 × 10⁻⁴ A cm⁻² K⁻² is determined from intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 A cm² K² for holes in p-type Si. Such behavior is attributed to Schottky barrier inhomogene ties by assuming a Gaussian distribution of barrier heights (BHs) due to barrier height inhomogeneities that prevail at interface. Also, Φ_B0 versus q/2kT plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ_B0 = 1.055 eV and σ₀ = 0.13 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Thus, the modified versus q/kT plot gives Φ_B0 and A^* as 1.050 eV and 40.08 A cm⁻² K⁻², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 40.03 A cm⁻² K⁻² is very close to the theoretical value of 32 A K⁻² cm⁻² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/p-Si Schottky barrier diodes with native insulator layer can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights.     

Current–voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current–voltage (I−V) measurements in the temperature range 140–300 K. The I–V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (Φ_B) increases with the increasing temperature. The I–V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal–semiconductor interface. The zero-bias barrier height Φ_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of Φ_B=0.615 eV and standard deviation σ_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm⁻² K⁻² and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm⁻² K⁻². This may be due to greater inhomogeneities at the interface.     

Galvanomagnetic properties of air-stable and highly conductive potassium-intercalated graphite sheet

Magnetoresistance and Hall coefficient of air-stable potassium-intercalated graphite sheets (hereafter abbreviated as K-PGS) were determined at room temperature. The magnitude of the magnetoresistance and the absolute value of Hall coefficient of K-PGS decreased with increasing potassium content of K-PGS, n_K/n_C. Two-carrier model was used for calculating carrier density and mobility. The electron density increased with increasing n_K/n_C: 3.07×10²⁰ cm⁻³ (n_K/n_C=0.005), 5.67×10²⁰ cm⁻³ (n_K/n_C=0.008) and 6.40×10²⁰ cm⁻³ (n_K/n_C=0.011). The value of the electron density of K-PGS with n_K/n_C=0.011 (nominal composition KC₉₁) was about 80% of the reported value, 7.8×10²⁰ cm⁻³, for KC₄₈ (n_K/n_C=0.021) prepared from HOPG (highly oriented pyrolytic graphite). The mobility decreased with increasing n_K/n_C: 2.11×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.005), 1.42×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.008) and 1.34×10³ cm² V⁻¹ s⁻¹ (n_K/n_C=0.011). The value of the mobility of K-PGS with n_K/n_C=0.011 was about 60% of the reported value (2300 cm² V⁻¹ s⁻¹) for KC₄₈ prepared from HOPG.     

Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (Al/Si₃N₄/p-Si) Schottky barrier diodes (SBDs) were measured in the temperature range of 80-300 K. By using the thermionic emission (TE) theory, the zero-bias barrier height Φ_B0 calculated from I-V characteristics was found to increase with increasing temperature. Such temperature dependence is an obvious disagreement with the negative temperature coefficient of the barrier height calculated from C-V characteristics. Also, the ideality factor decreases with increasing temperature, and especially the activation energy plot is nonlinear at low temperatures. Such behaviour is attributed to Schottky barrier inhomogeneties by assuming a Gaussian distribution of barrier heights (BHs) at interface. We attempted to draw a Φ_B0 versus q/2kT plot to obtain evidence of a Gaussian distribution of the BHs, and the values of Φ_Bo = 0.826 eV and α_o = 0.091 V for the mean barrier height and standard deviation at zero-bias, respectively, have been obtained from this plot. Thus, a modified ln(I_o/T²) − q²σ_o²/2(kT)² versus q/kT plot gives Φ_B0 and Richardson constant A^* as 0.820 eV and 30.273 A/cm² K², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 30.273 A/cm² K² is very close to the theoretical value of 32 A/cm² K² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/Si₃N₄/p-Si Schottky barrier diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. In addition, the temperature dependence of energy distribution of interface state density (N_SS) profiles was determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.     

Synthesis, physical and photo electrochemical characterization of La-doped SrSnO3

The transport properties of Sr_0.98La_0.02SnO_3−δ in the system Sr_1−xLa_xSnO_3−δ, after which the pyrochlore La₂Sn₂O₇ appears, were investigated over the temperature range 4.2-300 K. The oxide was found to be n-type semiconductor with concomitant reduction of Sn⁴⁺ into Sn²⁺. The magnetic susceptibility was measured down to 4.2 K and is less than 3×10⁻⁵ emu cgs mol⁻¹ consistent with itinerant electron behavior. The electron is believed to travel in a narrow band of Sn:5s character with an effective mass ∼4 m_o. The highest band gap is 4.32 eV and the optical transition is directly allowed. A further indirect transition occurs at 4.04 eV. The electrical conductivity follows an Arrhenius-type law with a thermal activation of 40 meV and occurs by small polaron hopping between nominal states Sn^4+/2+. The linear increase of thermo-power with temperature yields an electron mobility μ_300 K (2×10⁻⁴ cm² V⁻¹ s⁻¹) thermally activated. The insulating-metal transition seems to be of Anderson type resulting from random positions of lanthanum sites and oxygen vacancies. At low temperatures, the conduction mechanism changes to a variable range hopping with a linear plot Ln ρ⁻¹ vs. T⁻⁴. The photo electrochemical (PEC) measurements confirm the n-type conductivity and give an onset potential of −0.46 V_SCE in KOH (1 M). The Mott-Schottky plot C⁻²-V shows a linear behavior from which the flat band potential V_fb=+0.01 V_SCE at pH 7 and the doping density N_D=1.04×10²¹ cm⁻³ were determined.     

The vibrational spectrum of thiazole between 600 and 1400 cm revisited: A combined high-resolution infrared and theoretical study

The Fourier transform infrared gas-phase spectrum of thiazole, C₃H₃NS, has been recorded in the 600-1400 cm⁻¹ wavenumber region with a resolution around 0.0030 cm⁻¹. Nine fundamental bands (ν₅(A′) to ν₁₁(A′), ν₁₅(A″), and ν₁₆(A″)) are analysed employing the Watson model. Ground-state rotational and quartic centrifugal distortion constants as well as upper state spectroscopic constants have been obtained from the fits. A detailed analysis of perturbations identified in the ν₁₁(A′) band at 866.5 cm⁻¹ enables a definitive location of the very weak ν₁₀(A′) and ν₁₄(A″) bands at 879.3 and 888.7 cm⁻¹, respectively. The three levels are analysed simultaneously by a model including Coriolis resonance using an ab initio predicted first order c-Coriolis coupling constant; second and higher order Coriolis parameters are determined. Qualitative explanations in terms of Coriolis resonances are given for a number of crossings observed in ν₅(A′), ν₆(A′), and ν₇(A′) at 1383.7, 1325.8, and 1240.5 cm⁻¹, respectively. The rotational constants, anharmonic frequencies, and vibration-rotation constants (alphas, ) calculated by quantum chemical calculations using a cc-pVTZ and TZ2P basis with B3LYP methodology, have been compared with the present experimental data. The rotation constant differences for each vibrational state, from the ground state values, are closer to experiment from the TZ2P calculations relative to those using cc-pVTZ. The values for Δ_J, Δ_JK, Δ_K, δ_J, and δ_K are close to experiment with both basis sets.     

Fluorophosphate glasses containing manganese

New fluorophosphate glasses based on MnF₂, NaPO₃ and MF_n (M=Zn²⁺, Sr²⁺, Mg²⁺, Ba²⁺, Li⁺, Na⁺ and K⁺) have been synthesised and characterized. Large vitreous areas were observed. Samples of 4 mm in thickness have been obtained. These glasses are easy to prepare and stable in ambient air. Depending on the composition and the nature of the M cation, glass transition temperature, T_g, lies between 230 and 314 °C, crystallisation temperature, T_x is between 320 and 475 °C. These glasses are pink coloured, and infrared transmission extends up to 4.5 μm with extrinsic OH⁻ absorption band at 3200 cm⁻¹ and other bands around 2200 and 1600 cm⁻¹ that relate to PO₄ tetrahedron vibration. Other physical properties including density, microhardness, Young modulus, thermal expansion and refractive index were investigated and correlated to composition.     

Physical properties of the delafossite LaCuO2

High-quality LaCuO₂, elaborated by solid-state reaction in sealed tube, crystallizes in the delafossite structure. The thermal analysis under reducing atmosphere (H₂/N₂: 1/9) revealed a stoichiometric composition LaCuO_2.00. The oxide is a direct band-gap semiconductor with a forbidden band of 2.77 eV. The magnetic susceptibility follows a Curie-Weiss law from which a Cu²⁺ concentration of 1% has been determined. The oxygen insertion in the layered crystal lattice induces p-type conductivity. The electrical conduction occurs predominantly by small polaron hopping between mixed valences Cu^+/2+ with an activation energy of 0.28 eV and a hole mobility (μ_300 K=3.5×10⁻⁷ cm² V⁻¹ s⁻¹), thermally activated. Most holes are trapped in surface-polaron states upon gap excitation. The photoelectrochemical study, reported for the first time, confirms the p-type conduction. The flat band potential (V_fb=0.15 V_SCE) and the hole density (N_A=5.8×10¹⁷ cm⁻³) were determined, respectively, by extrapolating the curve C⁻² versus the potential to their intersection with C⁻²=0 and from the slope of the linear part in the Mott-Schottky plot. The valence band is made up of Cu-3d orbital, positioned at 4.9 eV below vacuum. An energy band diagram has been established predicting the possibility of the oxide to be used as hydrogen photocathode.     

Radial inhomogeneities induced by fiber diameter in electrically assisted LFZ growth of Bi-2212

Superconducting polycrystalline BSCCO fibers of 2:2:1:2 nominal composition were grown by the electrically assisted laser floating zone (EALFZ) technique. An electric current density of 2.1 A cm⁻² was applied through the solid/liquid (S/L) interface. A net effect of the fiber diameter on the as-grown microstructure and on the final superconducting properties is observed. A higher critical current density (∼2520 A cm⁻²) results for the thinner fibers (? = 1.7 mm) comparing to the value (∼1065 A cm⁻²) found for the wider ones (? = 2.5 mm). The steep axial thermal gradient at the S/L interface in the thinner fibers is responsible for its superior texture degree, a crucial parameter for improved current transport properties. Moreover, a Cu-free Bi_x(Sr,Ca)_yO_z phase crystallizes preferentially from the melt in the wider fibers, acting as obstacles to the current flux.     

Electrical and electromechanical properties of lead-potassium-yttrium-niobate ceramics—piezoelectric applications

Tungsten bronze (TB)-type oxide ceramic Pb_0.74K_0.13Y_0.13Nb₂O₆ (PKYN) has been synthesized by the standard solid state reaction method. Single phase formation, orthorhombic crystal structure was confirmed by X-ray diffraction (XRD). The substitution of Y³⁺ in Pb_0.74K_0.52Nb₂O₆ (PKN) decreased the unit cell volume and T_C=260 °C. PKYN exhibited the remnant polarization, P_r=8.5 μC/cm², and coercive field, E_c=28.71 kV/cm. Electrical spectroscopy studies were carried out over the temperature (35-595 °C) and frequency (45 Hz-5 MHz) ranges, and the charge carrier phenomenon, grain-grain boundary contribution and non-Debye-type relaxation were analyzed. The relaxation species are immobile charges in low temperature and oxygen vacancies at higher temperature. The theoretical values computed using the relations, ε′=ε_∞+sin(n(T)π/2)(a(T)/ε₀)(ω^n(T)−1); σ(ω)=σ_dc+Aωⁿ are fitted with the experimental one. The n and A parameters suggested that the charge carrier's couple with the soft mode and become mobile at T_C. The activation enthalpy, H_m=0.38 eV, has been estimated from the hopping frequency relation ω_p=ω_e exp(−H_m/k_BT). The piezoelectric constants K_t=35.4%, d₃₃=69×10⁻¹² C/N, d₃₁=−32×10⁻³ mV/N, S₁₁^E=17.8 pm²/N, etc., achieved in PKYN indicate the material is interesting for transducer applications. The activation energies from different formalisms confirmed the ionic-type conduction.     

Metal ion-molecule kinetics at combustion temperatures: The reaction of Ca with O2

The high-temperature photochemistry (HTP) technique, previously used for reactions of neutral species, has been adapted to the study of atomic metal ion-molecule reactions. Ca⁺ ions were generated by 193 nm multi-photon photolysis of calcium acetyl acetonate and its pyrolysis fragments. The relative ion concentrations were monitored by laser-induced fluorescence at 393.4 nm. Ar was used as the bath gas. The data for the Ca⁺ + O₂ + M → CaO₂⁺ + M association reaction (1) are fitted by k₁(907-1425 K) = 3.5 × 10⁻³² exp(+3161 K/T) cm⁶ molecule⁻² s⁻¹. Combining with an approximate k₁(296 K) value in the literature leads to k₁(296-1425 K) = 5.8 × 10⁻²² (T/K)^−2.9 exp(−601 K/T) cm⁶ molecule⁻² s⁻¹. Over much of the observed temperature range reaction (1) has much smaller rate coefficients than the corresponding neutral Ca association reaction. Reaction (1) is shown to behave very similarly to the O₂ association reaction with neutral K atoms, with which Ca⁺ is iso-electronic. This suggests that the initial step is ion-pair complex formation of the superoxide Ca²⁺(O₂)⁻, which is also consistent with results from density functional calculations. The k₁ values are rationalized via Troe’s unimolecular formalism, which leads to good accord with the experiments.     

Response of chemical vapor deposition diamond detectors to X-ray

The outstanding properties of diamond, such as radiation hardness, high carrier mobility, high band gap and breakdown field, distinguish it as a good candidate for radiation detectors. The detector's performance is strongly limited by the concentration of defects (grain boundaries and/or impurities) in chemical vapor deposition (CVD) diamond. We report the response of free-standing CVD diamond with a thickness of 300 μm and area of 2×2 cm², synthesized by a hot filament chemical vapor deposition (HFCVD) technique, to 5.9 keV X-ray radiation from a ⁵⁵Fe source. The linear I-V characteristics indicate that CVD diamond has good ohmic contacts. This detector also shows good results such as dark-current of 10⁻⁸ A, photocurrent of 10⁻⁶ A, energy resolution <0.4%, and a high ratio of signal to noise.     

High-resolution FTIR measurement of the ν4 band of methylene fluoride-d2

A high-resolution (0.002 cm⁻¹) infrared absorption spectrum of methylene fluoride-d₂ (CD₂F₂) of the lowest fundamental mode ν₄ in the region from 460 to 610 cm⁻¹ has been measured on a Bruker IFS 120-HR Fourier transform infrared spectrometer. More than 3500 transitions have been assigned in this B-type band centered at 521.9 cm⁻¹. The data have been combined with upper state pure rotational measurements in a weighted least-squares fit to obtain molecular constants for the upper state resulting in an overall standard deviation of 0.00018 cm⁻¹. Accurate value for the band origin (521.9578036 cm⁻¹) has been obtained and inclusion of transitions with very high J (?60) and K_a (?34) values has resulted in improved precision for sextic centrifugal distortion constants, in particular D_K, H_KJ, and H_K.     

Heat capacities of the electron acceptor 7,7,8,8-tetracyano- quinodimethane (TCNQ) and its radical-ion salt NH4(TCNQ) showing spin-Peierls transition

Heat capacities of the electron acceptor 7,7,8,8-tetracyanoquinodimethane (TCNQ) and its radical-ion salt NH₄-TCNQ have been measured at temperatures in the 12-350 K range by adiabatic calorimetry. A λ-type heat capacity anomaly arising from a spin-Peierls (SP) transition was found at 301.3 K in NH₄-TCNQ. The enthalpy and entropy of transition are Δ_trsH=(667±7) J mol⁻¹ and Δ_trsS=(2.19±0.02) J K⁻¹ mol⁻¹, respectively. The SP transition is characterized by a cooperative coupling between the spin and the phonon systems. By assuming a uniform one-dimensional antiferromagnetic (AF) Heisenberg chains consisting of quantum spin (S=1/2) in the high-temperature phase and an alternating AF nonuniform chains in the low-temperature phase, we estimated the magnetic contribution to the entropy as Δ_trsS_mag=0.61 J K⁻¹ mol⁻¹ and the lattice contribution as Δ_trsS_lat=1.58 J K⁻¹ mol⁻¹. Although the total magnetic entropy expected for the present compound is R ln 2 (=5.76 J K⁻¹ mol⁻¹), a majority of the magnetic entropy (∼4.6 J K⁻¹ mol⁻¹) persists in the high-temperature phase as a short-range-order effect. The present thermodynamic investigation quantitatively revealed the roles played by the spin and the phonon at the SP transition. Standard thermodynamic functions of both compounds have also been determined.     

High-resolution FTIR measurement of the 2ν8 band of methylene fluoride (CH2F2)

A high-resolution (0.003 cm⁻¹) infrared absorption spectrum of the first overtone of the fundamental mode ν₈ of methylene fluoride (CH₂F₂) has been measured on a Bruker IFS 120-HR Fourier transform infrared spectrometer. More than 2000 ro-vibration transitions in the range of 2770-2900 cm⁻¹ with J ? 45 and K_a ? 20 have been assigned in this B-type band centered at 2838.5 cm⁻¹. Precise value for the band origin (2838.579799 cm⁻¹) and centrifugal distortion constants up to third order (Φ_JK, Φ_KJ, and Φ_K) have been obtained by fitting a total of 1474 unblended ro-vibration transitions (J ? 45 and K_a ? 13) of the 2ν₈ band with a standard deviation of 0.00029 cm⁻¹ using a Watson’s A-reduced Hamiltonian in the I^r representation. Signature of perturbations with nearby states has been seen.     

Optical and electrical characterization of cadmium selenide doped with cobalt

The optical and electrical properties of Co²⁺ ions in CdSe have been investigated. Absorption, photoluminescence, electron paramagnetic resonance, and Hall measurements were used to characterize a cobalt-doped (1×10¹⁹ cm⁻³) single crystal. Infrared absorption and emission spectra associated with transitions between the ⁴A₂(F) ground state and the ⁴T₁(F) and ⁴T₂(F) excited states are described. At 10 K, spin-orbit splittings result in three structured absorption bands associated with the ⁴A₂(F) to ⁴T₁(F) transition having zero-phonon lines at 4926, 5101, and 5724 cm⁻¹. The ⁴A₂(F) to ⁴T₂(F) transition shows two zero-phonon lines at 2874 and 3286 cm⁻¹, also accompanied by vibronic structure. Intrinsic lattice modes explain most of the sharp-line structure observed at low temperature, except for a subset of peaks where local modes (25-30 cm⁻¹) are invoked. Using below-band-gap light, selective excitation allows detection of the ⁴T₁(F) to ⁴A₂(F) recombination at liquid-helium temperatures. The activation of free carriers in our n-type material containing shallow donors is affected by the presence of cobalt, and we find the Co^+/++ level to be about 34 meV below the conduction band of CdSe.     

Influence of B2O3 to the inhomogeneous broadening and spectroscopic properties of Er/Yb codoped fluorophosphate glasses

In a three-components fluorophosphate glass system, the introduction of H₃BO₃ brings some valuable influence to the spectroscopic and thermal properties of the glasses. With H₃BO₃ increases from 2 to 20 mol%, Ω₆, S_ed4I13/2, FWHM, T_g and fluorescence lifetime change from 3.21×10⁻²⁰ cm², 1.77×10⁻²⁰ cm², 45 nm, 480 °C and 8.8 ms to 4.66×10⁻²⁰ cm², 2.11×10⁻²⁰ cm², 50 nm, 541 °C and 7.4 ms, respectively. σ_abs, σ_emi, FWHM×τ_f×σ_emi has a maximum when H₃BO₃ is 11 mol%. T_g and T_x−T_g increases with H₃BO₃ introduction. Results showed that in fluorophosphate glasses, proper amount of B₂O₃ can be used as a modifier to suppress upconversion and improve spectroscopic properties, broadband property and crystallization stability of the glasses while keeps the fluorescence lifetime relatively high.