Tunable distributed feedback lasing with low threshold and high slope efficiency from electroluminescent conjugated polymer waveguide

We present here tunable lasing from holographic distributed feedback (DFB) resonator of electroluminescent conjugated polymer waveguide. Tunable holographic lasing from 560 to 590 nm was simply achieved by rotating a Lloyd-mirror waveguide configuration. Lasing performance for the first order (m = 1) is superior to that for the second order (m = 2). Threshold for lasing for m = 1 is in the range of 25 to 50 μJ/cm²/pulse, which is close to that for amplified spontaneous emission (ASE), and that for m = 2 is larger than 104 μJ/cm²/pulse. For m = 1, slope efficiency of 7.3% including ASE in addition to lasing emission was measured, whereas for m = 2 slope efficiency between 0.1 and 0.2% was measured.     

Polymer self-assembled nano-structures and surface relief gratings induced with laser at 157 nm

Surface relief gratings (SRG) and self-organized nano-structures induced by laser light at 157 nm on the fluoropolymer poly(2,2,2-trifluoroethyl methacrylate) (PTFEMA), films were obtained under well-controlled light exposure conditions. Regular and semi-regular spaced self-organized grating-like structures were created on polymeric films for ∼7.5-100 mJ/cm² laser energy fluence. For lower laser fluence, the surface morphology of light exposed/non-exposed areas exhibited irregular-like structure morphologies, while polymer surface irradiation with energy fluence higher than 150 mJ/cm² causes progressively fading out of the regular patterns. Under the specific experimental conditions, the SRG and self-organization patterning have their origin in the development of a surface thermal instability (Rayleigh's instability), which is resolved itself into regular patterns on the surface of the fluoropolymer film. The thermal instability is due to the explosive polymer surface photo-dissociation at 157 nm and the build up of longitudinal and periodic surface stress, which eventually create the SRG and the self-assembled structures on the polymer.     

Photoinduced anisotropy in an azo-containing ionic liquid-crystalline polymer

Photoinduced anisotropy in an azobenzene ionic liquid-crystalline polymer was investigated through dichroism, birefringence and polarization holography. A dichroism degree of 1.58 and a birefringence value Δn ∼ 10⁻² were achieved in the polymer film at room temperature, and the polymer film was found to possess the characteristics of reversible and long-term optical storage. Particularly the stored birefringence could be enhanced to Δn ∼ 10⁻¹ by annealing the film, and it is attributed to the thermal self-organization of the molecules. Furthermore, linear- and circular-polarization holographic recordings were accomplished in the polymer film and pure polarization gratings were produced.     

Photoluminescence and electroluminescence of a novel green-yellow emitting material-5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile

A new compound with intramolecular charge transfer (ICT) property—5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both “positive” and “negative” solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N′-diphenyl-N,N′-bis-(3-methylphenyl) (1,1′-diphenyl)4,4′-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m² at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m² at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m² at 4.5 V, a maximum brightness of 12600 cd/m² at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A.     

Fabrication of 550 nm gratings in fused silica by laser induced backside wet etching technique

A series of 550 nm spacing gratings were fabricated in fused silica by laser induced backside wet etching (LIBWE) method using the fourth harmonic of a Q-switched Nd:YAG laser (wavelength: λ = 266 nm; pulse duration: FWHM = 10 ns). During these experiments we used a traditional two-beam interference method: the spatially filtered laser beam was split into two parts, which were interfered at a certain incident angle (2θ = 28°) on the backside surface of the fused silica plate contacting with the liquid absorber (saturated solution of naphthalene-methyl-methacrylate c = 1.85 mol/dm³). We studied the dependence of the quality and the modulation depth of the prepared gratings on the applied laser fluence and the number of laser pulses. The surface of the etched gratings was characterized by atomic force microscope (AFM). The maximum modulation depth was found to be 180-200 nm. Our results proved that the LIBWE procedure is suitable for production of submicrometer sized structures in transparent materials.     

Electro-optical characteristics of photoinduced isomerization in 2,2′-azobis[5,6-bis(dodecyloxy)quinoxaline]-azo-dye-doped nematic liquid crystals

The formation of photoinduced gratings was realized and dielectric properties were investigated in a nematic liquid crystal (LC) doped by 2,2′-azobis[5,6-bis(dodecyloxy)quinoxaline] azo dye (AD). The enhancement of the optical and electrical properties of the system was studied by dielectric spectroscopy and diffraction grating measurements. We report the electro-optical properties of LC cells containing pure LC (E7) and its doped form with 1% (wt/wt) 2,2′-azobis[5,6-bis(dodecyloxy)quinoxaline] AD. Diffraction efficiencies, η, of 441 nm pump and 632 nm probe beams were measured in two-wave-mixing experiment. Diffraction efficiency has a noteworthy increase in AD-doped nematic liquid crytals. A maximum diffraction efficiency of 14% was found for cell doped with AD, while cells without AD had a maximum efficiency of 1%. Photoinduced refractive index change Δn and nonlinear index coefficient n₂ were also determined by the two-wave-mixing method. The dielectric parameters of AD-doped E7 and pure E7 LC have been investigated in the frequency range 1 kHz-1 MHz by the dielectric-spectroscopy method. Dielectric anisotropy (Δε) property of the LCs changes from the positive type to negative type and dielectric anisotropy values decrease with AD.     

Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/T_m = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/T_m = 0.55-0.70, where T and T_m are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/T_m = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/T_m = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/T_m = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/T_m = 0.55-0.70 also show the individual characteristic surface morphology.     

Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq₃) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C⁴) (acetyl acetonate) (Ir(C6)₂(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq₃:DCJTB (0.7 wt%):Ir(C6)₂(acac) (0.3 wt%) (40 nm)/Alq₃ (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m² and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)₂(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.     

Evanescent wave holographic recording in nanosize thick chalcogenide glass films

The results of holographic gratings recording in 29, 15 and 8 nm thick As₂S₃ films are presented in the paper. The method is based on the interference of surface-propagating evanescent waves, created by total internal reflection. The condition for successful recording is the penetration depth of these inhomogeneous waves to be greater than the films thickness. In this case, the film’s refractive index does not affect the total internal reflection (TIR) condition and could be greater than the input glass prism. The experimentally obtained low diffraction efficiencies by this holographic recording technique is due to the very low refractive index modulation, but the good signal-to-noise ratio - better than 50:1 and Bragg-type diffraction are a base for future applications of this grating formation method in nanotechnology.     

Synthesis and electroluminescent properties of a carbozole-functionalized europium(III) complex

A novel europium(III) complex, tris(dibenzoylmethanate){1-[9-hexyl-9H-carbazole]-2-(2-pyridyl)-benzimidazole}europium(III) [Eu(DBM)₃(CAR-PyBM)] functionalized by a carbozole fragment, was synthesized and used as emitting material in organic electroluminescent (EL) devices. Compared with the device based on an unfunctional Eu(III) complex, [Eu(DBM)₃HPyBM] (HPyBM=2-(2-pyridyl)benzimidazole), the EL performances of the device using [Eu(DBM)₃(CAR-PyBM)] as an emitter was significantly enhanced due to the improvement of hole-transporting ability. The maximum efficiency and luminance of red emission achieved from the device with the configuration of ITO/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′diamine (TPD, 50 nm)/ [Eu(DBM)₃(CAR-PyBM)] (30 nm)/1,3,5-tirs-(N-phenylbenzimidazol-2-yl)benzene (TPBI, 20 nm)/LiF (1.5 nm)/Al were 4.2 cd/A and 200 cd/m², respectively.     

New double graded structure for enhanced performance in white organic light emitting diode

This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq₃ (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq₃: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m² at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.     

Peculiarities of spontaneous grating generation in light-sensitive waveguide layers during holographic grating formation

The generation of spontaneous (noise) gratings during the simultaneous formation of a holographic grating in thin (on the order of the cutoff thickness of the TE₀ waveguide mode) AgCl-Ag films by two laser beams with λ = 532 nm and polarization vectors that make an angle of 45° with the plane of incidence have been studied. The electron microscopy images and diffraction patterns have revealed a significant difference of the spontaneous-grating structure from the structure obtained under irradiation by one laser beam. The spontaneous gratings have a significant spread in the directions of their wave vector, and the diffraction pattern (recorded using a probe beam with λ = 337 nm) has the form of a bundle of diverging arcs that intersect at one point. This difference is caused by self-diffraction from the holographic grating, which is responsible for the main diffraction peaks with odd orders, the growth of spontaneous gratings because of the interference of the beams diffracted by the holographic grating with the waveguide TE₀ modes scattered in the film, and silver transport to the interference minima. The diffraction patterns are quantitatively analyzed and the period of the new (formed under two-beam irradiation) spontaneous gratings is calculated. The calculation results are in good agreement with the experimental data.     

Flexible gratings fabricated in polymeric plate using femtosecond laser irradiation

Flexible gratings embedded in poly-dimethlysiloxane (PDMS) were fabricated using femtosecond laser pulses. Photo-induced gratings in a flexible PDMS plate were directly written by a high-intensity femtosecond (130 fs) Ti: Sapphire laser (λ_p=800 nm). Refractive index modifications with 4 μm diameters were photo-induced after irradiation of the femtosecond pulses with peak intensities of more than 1×10¹¹ W/cm². The graded refractive index profile was fabricated to be symmetric around the center of the focal point. The diffraction efficiency of the grating samples is measured by an He-Ne laser. The maximum value of refractive index change (Δn) in the laser-modified regions was estimated to be approximately 3.17×10⁻³.     

Fabrication of holographic diffraction gratings based on As<Subscript>2</Subscript>S<Subscript>3</Subscript> Layers

The formation of holographic diffraction gratings based on As₂S₃ layers is investigated. The variation of the groove profiles with exposure is studied by atomic force microscopy. The spectral curves of the diffraction efficiency are taken, and a relationship between these curves and grating surface relief is analyzed.     

Second-order optical nonlinearities from χ gratings induced by holographic all-optical poling

The paper presents the second-order optical nonlinearities from χ⁽²⁾ gratings induced by holographic all-optical poling for azobenzene polymer. Second harmonic (SH) signal along the directions with two different vectors was measured. One is strong SH signal diffracted in the same direction as 2ω writing beam with wave vector k_2ω and the other is weak SH signal diffracted in the direction of wave vector of 4k_ω - k_2ω + Δk where k_ω is wave vector of ω beam and Δk is the wave vector mismatch whose vector is parallel to k_ω. The latter signal was used as a tool to monitor the formation of holographic χ⁽²⁾ gratings in real-time because it has off-axis wave vector different from both k_ω and k_2ω. The increase of 2ω intensity on poling process led to the large increase of second-order optical nonlinearity. The real-time monitoring showed that it also gave the large relaxation of second-order optical nonlinearity on poling process. The increase of 2ω (532 nm) energy enhanced the increase of local heating, which led to easier alignment of azobenzene chromophore and also larger relaxation of aligned chromophore.     

Efficient small molecular and polymer organic devices using bis[2-(4-tert-butylphenyl)benzothiazolato-N,C′] iridium (III) (acetylacetonate) dye as emitter

Small molecular organic light-emitting diodes (MOLED) and polymer organic light-emitting diodes (POLED) were fabricated with yellow light emission phosphorescent dye bis[2-(4-tert-butylphenyl)benzothiazolato-N,C²′] iridium (III) (acetylacetonate) doped in different hosts. The electroluminescent (EL) spectra of both devices shown two peaks generated from iridium dye but the position of main peak changed and became broader for POLED. The maximum luminance of 10,500 cd/m² achieved at 12.5 V for MOLED is higher than maximum luminance of 9996 cd/m² at 20 V for POLED. The maximum power efficiency of small molecular device is 6.4 lm/W, which is higher than 2.3 lm/W of polymer device, but the efficiency of both devices will roll off at large current density.     

Design and analysis of nano-deep corrugated waveguide grating-based dual-resonant filters in visible and infra-red regions

A theoretical analysis of nano-deep corrugated long-period waveguide gratings on a SU-8 polymer-based channel waveguide with NOA61 optical epoxy coated upper- and lower cladding is presented. The transmission spectra of the gratings show strong rejection bands both at visible (at wavelength region of 450?460 nm) and infra-red (at wavelength region of 1530?1540 nm) regions when a grating period of ?68 μm with optimized grating tooth height is considered. Phase-matching graphs are studied to find the relationship between resonance wavelength and grating period. These results show that the grating parameters significantly affect the characteristics of transmission spectra as well as the resonance wavelength of the grating. Long-period waveguide grating-based band pass filter made by use of same polymer materials are also designed and analyzed. These types of waveguide grating-based filters can widely be used for visible and infra-red wavelength sensing applications.     

基于全息液晶/聚合物光栅的分布反馈式激光器的波长调谐特性研究

首先制备了不同周期的染料掺杂全息液晶/聚合物光栅并进行激光抽运实验, 得到了激光器的调谐曲线,确定了激光器在574 nm到685 nm的谱带里均可以实现激光输出, 即激光器具有110 nm左右的可调谐范围. 之后, 通过温控仪控制样品的温度, 对周期为610 nm的染料掺杂全息液晶/聚合物光栅进行激光抽运, 探测不同温度下的输出激光光谱, 观察到随着温度由20℃升高到65℃, 激光器的中心波长由627.9 nm减小到623 nm, 产生了4.9 nm的波长蓝移.     

Optical filter based on subtractive dispersion planar reflective gratings

We have successfully designed, fabricated, and tested an optical filter based on cascaded planar reflective gratings. The device uses a combination of two grating elements arranged in a subtractive dispersion configuration. The first grating demultiplexes a 300 nm wide band and drops optical channels at 1490 and 1550 nm, commonly used in passive optical networks. The second grating completely counter-balances the dispersion properties of the first grating and ultimately yields zero dispersion in the output waveguide. Such a configuration allows the transmission of optical signals though the device in an ultra-wide band spanning 1250-1410 nm. The filter was manufactured using an industry standard silica-on-silicon process which was augmented with grating facet formation and metallization. In spite of using low refractive index contrast waveguides (0.82%), the device had a remarkably low footprint of only 0.21 cm². Applications of the device in passive optical networks are discussed.     

Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation

Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As₂S₃ and As₂S₃ semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.