Coupled-cavity passively Q-switched two-Stokes microchip laser

Experimental and theoretical studies of the coupled-cavity diode-pumped Nd:YAG/Cr:YAG microchip lasers with intracavity Raman conversion of laser pulses in a Ba(NO₃)₂ crystal into two Stokes pulses have been made. Two lasers with a different cavity length have been investigated. The minimal pulse durations at the 2nd Stokes wavelength were ??100 ps in the short-cavity laser at pulse energy of 5???J, and the pulse repetition rate reached 20?C24?kHz. The laser and Stokes pulse dynamics, as well as the spatial intensity distribution of the laser and the 1st Stokes beams at the output mirror have been recorded. A model describing such coupled-cavity microchip Raman lasers has been developed. The numerically simulated laser and Stokes pulse dynamics, and the calculated pulse energy, duration, and repetition rate are in good agreement with the experimental data.     

Sub-nanosecond microchip laser with intracavity Raman conversion

Efficient sub-nanosecond pulse operation of microchip lasers with intracavity Raman conversion and pulse compression is presented for the first time. The microchip lasers were composed of Nd:LSB or Nd:YAG laser crystals, Cr⁴⁺:YAG saturable absorber, and Ba(NO₃)₂ Raman medium. The pulse duration obtained at the Stokes wavelength (1196 nm) was as short as 118 ps. Optical conversion efficiency of laser-diode pump power to the Stokes power of 8% was reached. Pulse energy and peak power of Stokes emission were 1.2 μJ and 5.4 kW, correspondingly. Numerical calculations are in good agreement with obtained experimental results. Received: 20 December 2002 / Revised version: 6 March 2003 / Published online: 5 May 2003 RID="*" ID="*"Corresponding author. Fax: +1-716/645-6945, E-mail: ankuzmin@acsu.buffalo.edu RID="**" ID="**"Present address: University at Buffalo, SUNY, The Institute for Lasers, Photonics, and Biophotonics, 458 NSC, Buffalo, NY 14 260-3000, USA     

Z-Scan studies of KYW, KYbW, KGW, and Ba(NO3)2 crystals

We present the studies of nonlinear refraction and nonlinear absorption in promising crystals which are extensively used in Raman lasers or as solid-state laser host materials: Ba(NO₃)₂, KGW, KYW, and KYbW. The single-beam z-scan technique with 1 ps laser pulses at 790 and 395 nm has been applied for the study. Nonlinear refraction-index intensity-coefficients and two-photon absorption coefficients have been determined for the crystals. The considerable enhancement of nonlinear refraction is observed in the crystals at 395 nm.     

Self-mode locking at multiple Stokes generation in the Raman laser

A self-mode-locking at multiple Stokes generation in Raman lasers is reported. Trains of pulses with durations of down to 50 ps each have been obtained. The reasons for the self-mode-locking have been investigated numerically. Way to the further decreasing of pulse durations was formulated.     

Silicon donor and Stokes terahertz lasers

Two types of lasers based on hydrogen-like impurity-related transitions in bulk silicon operate at frequencies between 1 and 7 THz (wavelength range of 50-230 μm). These lasers operate under mid-infrared optical pumping of n-doped silicon crystals at low temperatures (<30 K). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized in the first type of terahertz silicon lasers. These lasers have a gain ∼1-3 cm⁻¹ above the laser thresholds (>1 kW cm⁻²) and provide 10 ps-1 μs pulses with a few mW output power on discrete lines. Raman-type Stokes stimulated emission in the range 4.6-5.8 THz has been observed from silicon crystals doped by antimony and phosphorus donors when optically excited by radiation from a tunable infrared free electron laser. The scattering occurs on the 1s(E)→1s(A₁) donor electronic transition accompanied by an emission of the intervalley transverse acoustic g-phonon. The Stokes lasing has a peak power of a few tenths of a mW and a pulse width of a few ns. The Raman optical gain is about 7.4 cm GW⁻¹ and the optical threshold intensity is ∼100 kW cm⁻².     

High repetition rate Q-switched microchip Nd:YVO4 laser with pulse duration as short as 1.1 ns

We have demonstrated a compact and an efficient passively Q-switched microchip Nd:YVO₄ laser by using a composite semiconductor absorber as well as an output coupler. The composite semiconductor absorber was composed of an LT (low-temperature grown) In_0.25Ga_0.75As absorber and a pure GaAs absorber. To our knowledge, it was the first demonstration of the special absorber for Q-switching operation of microchip lasers. Laser pulses with durations of 1.1 ns were generated with a 350 μm thick laser crystal and the repetition rate of the pulses was as high as 4.6 MHz. The average output power was 120 mW at the pump power of 700 mW. Pulse duration can be varied from 1.1 to 15.7 ns by changing the cavity length from 0.45 to 5 mm. Pulses with duration of 1.67 and 2.41 ns were also obtained with a 0.7 mm thick laser crystal and a 1 mm thick laser crystal, respectively.     

High-peak power multi-wavelength picosecond pulses generated from a BaWO4 Raman-seeded optical parametric amplifier

We report the generation of high-peak power multi-wavelength picosecond laser pulses using optical parametric amplification (OPA) in BBO seeded with pulses generated in a 5-mm length BaWO₄ crystal by stimulated Raman scattering of 18-ps laser pulses at 532 nm. The maximum output energy of the amplified first-Stokes component at 559.7 nm was about 1.76 mJ. The corresponding maximum peak power, pulse duration and spectral line width were measured to be 117.3 MW, 15 ps and 18.0 cm⁻¹, respectively. The multi-wavelength picosecond laser pulses were in the visible and near infrared ranges. Using this Raman-seeded OPA technique, the beam quality of the stimulated Raman scattering pulses can be improved.     

Wavelength-independent all-optical synchronization of a Q-switched 100-ps microchip laser to a femtosecond laser reference source

We present a Q-switched microchip laser emitting 1064-nm pulses as short as 100 ps synchronized to a cavity dumped femtosecond laser emitting 800-nm pulses as short as 80 fs. The synchronization is achieved by presaturating the saturable absorber of the microchip laser with femtosecond pulses even though both lasers emit at widely separated wavelengths. The mean timing jitter is 40 ps and thus considerably shorter than the pulse duration of the microchip laser.     

1097 nm Nd:YVO4 self-Raman laser

An acousto-optically Q-switched self-Raman laser emitting at 1097 nm is demonstrated with a c-cut Nd:YVO₄ crystal, using a fiber-coupled 880 nm diode laser as the pumping source. Raman laser performances in concave-plane and plane-plane oscillating cavities are studied and compared. With an absorbed diode power of 12.4 W and a pulse repetition rate of 50 kHz, the highest output power of 1.45 W is obtained from the plane-plane cavity, corresponding to an optical-to-optical conversion efficiency of 11.7%.     

Diode-end-pumped passively mode-locked Nd:GGG laser with a semiconductor saturable mirror

We report on the passive mode-locking of a diode-end-pumped neodymium-doped gadolinium gallium garnet (Nd:GGG) crystal with a semiconductor saturable absorber mirror (SESAM). Continuous wave (CW) mode-locking was obtained. The mode-locked pulse duration was estimated to be ∼17.5 ps with a maximum average output power of 0.4 W. The mode-locked pulses have a repetition rate of 121.5 MHz. To our knowledge, this is the first demonstration of passive mode-locking of the diode pumped Nd:GGG lasers.     

Diode-pumped passively mode-locked Nd:GdVO4 laser at 912 nm

We have demonstrated the stable mode-locked Nd:GdVO₄ laser operating on the ⁴F_3/2-⁴I_9/2 transition at 912 nm. With a four-mirror-folded cavity and a semiconductor saturable absorber mirror for passive mode-locking, we have gained 6.5 ps laser pulses at a repetition rate of 178 MHz. The laser is diode-end-pumped, and the total output power from the out coupler is 128 mw at an incident pump power of 19.7 W.     

Waveband-switchable multiwavelength mixed-cascaded phosphosilicate raman fiber lasers

In this paper, the mixed-cascaded Raman scattering has been developed to investigate multiwavelength phosphosilicate Raman fiber lasers (MRFLs). With a tunable Yb³⁺-doped double-clad fiber laser (YDCFL) as the Raman pump source, we propose a compact and waveband-switchable (from the O- to U-band) MRFL using two- or three-mixed-cascaded Raman scattering of both SiO₂/GeO₂ and P₂O₅ in a P-doped fiber. We also confirm experimentally the feasibility of the proposed mixed-cascaded MRFL. When a 1064 nm YDCFL was used to pump a spool of 1-km P-doped fiber, the compact linear-cavity MRFLs in the O- and L-band operation were obtained, respectively, based on the two- and three-mixed cascaded Raman scattering. Up to 16-wavelength stable oscillation around 1320 nm has been observed with a spacing of 0.40 nm and an extinction ratio >30 dB. 12 lasing lines around 1601 nm have also been achieved with a spacing of 0.58 nm. The multiwavelength output powers as high as 108 and 138 mW were obtained in the O- and L-band operations, respectively. The wavelength spacing of the MRFLs is flexibly adjustable, and the peak wavelength of each lasing line is continuously tunable over the wavelength spacing. In addition, the important characteristics of the mixed-cascaded MRFLs, including the linewidth broadening, the signal-to-noise ratio and the conversion efficiency, are discussed.     

KrF laser ablation of a polyethersulfone film: Effect of pulse duration on structure formation

Polyethersulfone (PES) films were processed with KrF laser irradiation of different pulse durations (τ). Scanning electron microscopy (SEM) and Raman spectroscopy were employed for the examination of the morphology and chemical composition of the irradiated surfaces, respectively. During ablation with 500 fs and 5 ps pulses, localized deformations (beads), micro-ripple and conical structures were observed on the surface depending on the irradiation fluence (F) and the number of pulses (N). In addition, the number density of the structures is affected by the irradiation parameters (τ, F, N). Furthermore, at longer pulse durations (τ = 30 ns), conical structures appear at lower laser fluence values, which are converted into columnar structures upon irradiation at higher fluences. The Raman spectra collected from the top of the structures following irradiation at different pulse durations revealed graphitization of the ns laser treated areas, in contrast to those processed with ultra-short laser pulses.     

Nonstationary Raman amplification of superluminescence in crystals

The sequential excitation of LiF crystals with F ₂ ^? color centers and KGd(WO₄)₂ crystals by 1047-nm laser pulses with a duration of 22 ps is investigated. Broadband (275 cm^?1) Stokes superluminescence appearing in the fluoride crystal undergoes nonstationary Raman amplification in the oxide crystal. The amplified pulses with a Stokes frequency shift of 767 cm^?1, a duration of 7 ps, and a power up to ～1.1 MW have high spatial and time coherence and exhibit time delay increasing from ～1 to 4.5 ns with a decreasing pump power. The results are discussed in terms of the cooperative Raman scattering.     

Cascaded compression of the first and second Stokes pulses during forward transient stimulated Raman amplification

The results of numerical modelling of cascaded compression of the first and second Stokes pulses during regenerative regime of the forward transient stimulated Raman amplification are presented for the case when the walk-off length of the first Stokes pulse due to group velocity mismatch is shorter than the length of the nonlinear medium. The influence of the initial amplitudes of the seed first Stokes pulses, its durations and its time delay with respect to the pump pulse, the Kerr nonlinearity of the medium on the conversion efficiency, duration and propagation factor M² of the first and second Stokes pulse are studied. It is demonstrated that for the pump pulse duration of 1 ps the duration of the compressed second Stokes pulses in a KGW crystal near the beam axis may be approximately 14 times shorter than the pump pulse duration. It is shown that the propagation factor of the compressed pulses increases significantly because of complex spatial-temporal dynamics of compression and the influence of Kerr nonlinearity of Raman medium.     

Mg-based photocathodes prepared by ns, ps and fs PLD for the production of high brightness electron beams

Mg-based films have been prepared by pulsed laser deposition technique for photocathode applications. We have investigated the influence of pulse laser duration on morphology and photoemissive properties. Two laser sources have been used, generating pulses of 30 ns at 308 nm (XeCl excimer laser), 5 ps and 500 fs at 248 nm (KrF excimer laser) to grow Mg films onto Si and Cu substrates in high vacuum (∼10⁻⁷ Pa) and at room temperature. Morphological investigations carried out by scanning electron microscopy (SEM) have revealed that, in our experimental conditions, the number and the mean size of the droplets on the films surfaces decreases as the pulse laser duration shortens. The contamination level of Mg film surfaces have been studied by energy dispersive X-ray spectroscopy (EDX). The photoelectron performances in terms of quantum efficiency (QE) and emission stability have been tested in a UHV DC photodiode cell (10⁻⁷ Pa). Measures of the QE of the samples surfaces have revealed a decrease on the initial value for Mg-based photocathodes prepared by fs laser (from 7.8 × 10⁻⁴ to 6.6 × 10⁻⁴) PLD with respect to ps (from 6.2 × 10⁻⁴ to 7.4 × 10⁻⁴) and ns lasers (from 5.0 × 10⁻⁴ to 1.6 × 10⁻³). A comparison among Mg-based photocathodes prepared by ns, ps and fs PLD for the production of high brightness electron beams has been presented and discussed.     

Laser-diode end-pumped intracavity frequency doubling semiconductor saturable absorber mirror passively mode-locked picosecond lasers

A diode pumped Nd:YVO₄ semiconductor saturable absorber mirror (SESAM) passive mode-locked intracavity frequency doubled laser was studied. A type II phase matching KTiOPO₄(KTP) crystal and a type I phase matching LiB₃O₅ (LBO) frequency doubling crystal were respectively inserted in the cavity. With a pump power of 4.5 W, a 90 mW output of frequency doubled beam and 29.7 ps pulse duration were achieved with frequency doubled by KTP. With the same pump power a 140 mW output of frequency doubled beam and 3.67 ps pulse duration were achieved with LBO.     

AOM fourfold pass for efficient Q-switching and stable high peak power laser pulses

We report on a scheme for efficient acousto-optical Q-switching. A flash lamp pumped Nd:YAG oscillator with an acousto-optic modulator (AOM) fourfold pass configuration is presented. The setup combines two important advantages: enhancement of the diffraction efficiency by additional AOM passes and a compact oscillator design in spite of an extension of the optical path length. A flash lamp pumped oscillator with an average output power of 7 W and a beam quality of M² = 1.2 is developed. The system operates with a 100 Hz repetition rate for the flash lamps. In each pumping pulse a pulse train of 1 up to 40 Q-switched laser pulses is generated. The pulse duration is from 15 to 120 ns. In comparison to a former setup (AOM double pass) the AOM fourfold pass configuration allows single pulses with energy above 20 mJ and a pulse peak power of more than 1 MW. In addition, the beam profile is improved due to a better separation of the incident and diffracted beam caused by the AOM. The laser is dedicated as master oscillator in a master oscillator power amplifier (MOPA) system where pulse peak powers in the MW range should be achieved.     

Reflective carbon nanotube as the saturable absorber for mode-locked 1064 nm laser

With a reflective single-walled carbon nanotube as the saturable absorber, a laser diode-pumped passively mode-locked Nd:YVO₄ laser at 1064 nm was realized for the first time. The pulse duration of 12 ps was produced with a repetition rate of 83.7 MHz. The peak power and the single pulse energy of the mode-locking laser were 1.28 kW and 15.4 nJ, respectively.