Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

Charge transport in PbMoO<Subscript>4</Subscript> crystals

Dc and ac electrical conductivity of lead molybdate crystals is studied in the temperature range 300–550 K. The electrical conductivity was shown to have electronic (hole) impurity character. The I–V characteristics are typical of a space charge-limited current. The carrier mobility was estimated to be 10^?5 cm² V^?1 sat T=300 K. The results of the study suggest the hopping mechanism of conduction in PbMoO₄ crystals.     

Specific features of anion transfer in HoF<Subscript>3</Subscript> crystals at high temperatures

The anionic conductivity of HoF₃ single crystals with a β-YF₃ structure (orthorhombic crystal system, space group Pnma) is investigated over a wide range of temperatures (323–1073 K). The unit cell parameters of HoF₃ crystals are as follows: a=0.6384±0.0009 nm, b=0.6844±0.0009 nm, and c=0.4356±0.0005 nm. It is revealed that the conductivity anisotropy of the HoF₃ crystals is insignificant over the entire temperature range covered. The crossover from one mechanism of ion transfer to another mechanism is observed near the critical temperature T_c≈620 K. The activation enthalpy of electrical conduction is found to be ΔH₁=0.744 eV at T<T_c and ΔH₂=0.43 eV at T>T_c. The fluorine vacancies are the most probable charge carriers in HoF₃ crystals. The fluorine ionic conductivities at temperatures of 323, 500, and 1073 K are equal to 5×10^?10, 5×10^?6, and 2×10^?3 S cm^?1, respectively.     

Mechanisms of low-temperature high-frequency conductivity in systems with a dense array of Ge<Subscript>0.7</Subscript>Si<Subscript>0.3</Subscript> quantum dots in silicon

High-frequency (HF) conductivity in systems with a dense (with a density of n = 3 × 10¹¹ cm^?2) array of self-organized Ge_0.7Si_0.3 quantum dots in silicon with different boron concentrations n_B is determined by acoustic methods. The measurements of the absorption coefficient and the velocity of surface acoustic waves (SAWs) with frequencies of 30–300 MHz that interact with holes localized in quantum dots are carried out in magnetic fields of up to 18 T in the temperature interval from 1 to 20 K. Using one of the samples (n_B = 8.2 × 10¹¹ cm^?2), it is shown that, at temperatures T ≤ 4 K, the HF conductivity is realized by the hopping of holes between the states localized in different quantum dots and can be explained within a two-site model in the case of

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, where ω is the SAW frequency and τ₀ is the relaxation time of the populations of the sites (quantum dots). For T > 7 K, the HF conductivity has an activation character associated with the diffusion over the states at the mobility threshold. In the interval 4 K < T < 7 K, the HF conductivity is determined by a combination of the hopping and activation mechanisms. The contributions of these mechanisms are distinguished; it is found that the temperature dependence of the hopping HF conductivity approaches saturation at T* ≈ 4.5 K, which points to a τ₀ ≤ 1. A value of τ₀(T*) ≈ 5 × 10^?9 s is determined from the condition ωτ₀(T*) ≈ 1.

     

Thermopower of composites containing metallic cobalt nanoparticles embedded in the Al<Subscript>2</Subscript>O<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> dielectric matrix

The concentration and temperature dependences of the thermopower of composites containing Co nanoparticles embedded in the Al₂O _n dielectric matrix are investigated. Below the percolation threshold, i.e., in the tunneling conduction region, the absolute values of the thermopower of the composites under investigation are less than those above the percolation threshold. It is revealed that, in the tunneling conduction region, the slope of the temperature dependences of the thermopower changes at a temperature of ～205 K. This can indicate that the thermopower is sensitive to a change in the mechanism of conduction from the Mott law ln(σ) ∝ (1/T)^1/4 to a power relation that corresponds to the model of inelastic resonant tunneling through a chain of localized states in the dielectric matrix. The introduction of oxygen in the course of sputtering brings about a decrease in the absolute values of the thermopower; however, the character of variation in the concentration and temperature dependences of the thermopower remains unchanged.     

Frequency dispersion of dielectric coefficients of layered TlGaS<Subscript>2</Subscript> single crystals

Frequency dependence of the dissipation factor tanδ, the permittivity ɛ, and the ac conductivity σ_ac across the layers in the frequency range f=5×10⁴−3×10⁷ Hz was studied in layered TlGaS₂ single crystals. A significant dispersion in tanδ was observed in the frequency range 10⁶−3×10⁷ Hz. In the range of frequencies studied, the permittivity of TlGaS₂ samples varied from 26 to 30. In the frequency range 5×10⁴−10⁶ Hz, the ac conductivity obeyed the f ^0.8 law, whereas for f>10⁶ Hz σ_ac was proportional to f ². It was established that the mechanism of the ac charge transport across the layers in TlGaS₂ single crystals in the frequency range 5×10⁴−10⁶ Hz is hopping over localized states near the Fermi level. Estimations yielded the following values of the parameters: the density of states at the Fermi level N _F=2.1×10¹⁸ eV⁻¹ cm⁻³, the average time of charge carrier hopping between localized states τ=2 μs, and the average hopping distance R=103 ?. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 6, 2004, pp. 979–981. Original Russian Text Copyright ? 2004 by Mustafaeva.     

The influence of magnetic and structural heterogeneity on thermopower,magnetothermopower, electrical resistivity,and magnetoresistivity of Nd<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> manganite

The thermopower, S, magnetothermopower, ΔS/S, resistivity, ρ, and magnetoresistivity, Δρ/ρ, depending on the temperature T and magnetic field H, have been studied in an Nd_0.5Sr_0.5MnO₃ single crystal consisting of three types of clusters: an antiferromagnetic CE-type with charge-orbital ordering (below the Neel temperature T_NCE ~ 145 K) and an A-type with T_NA ~ 220 K; a ferromagnetic at 234 ≤ T ≤ 252 K, and a ferromagnetic metal phase below the Curie temperature T_C = 248 K. The thermopower was found to be negative, indicating the dominance of the electronic type of conductivity. In the S(T) curves, a sharp minimum is observed in the temperature range of 100 K ≤ T ≤ 133 K, close to T_NCE, where the absolute S value attains 53 μV/K. With a further increase in temperature, the absolute S value decreases rapidly; at 200 K it is equal to 7 μV/K. It then slightly increases, reaching its maximum value of 15 μV/K at a temperature of 254 K, which is close to T_C. The absolute thermopower decreased under the influence of the magnetic field; i.e., a negative magnetothermopower occurs. In {ΔS/S}(T) curves, a sharp minimum is observed at T = 130 K close to T_NCE, where the magnetothermopower reaches a huge value of ~45% at H = 13.23 kOe. A broad minimum in the {ΔS/S}(T) curves is observed near the Curie temperature and its value is also high, viz., ~15% in the maximum measuring magnetic field of 13.23 kOe. The extremely high magnetothermopower values mean that the charge-orbital ordered nanoclusters or ferron type make the main contribution to the thermopower of the entire sample. The behavior of the ρ(T) and {Δρ/ρ}(T) curves is similar to that of the S(T) and {ΔS/S}(T) dependencies, which is in agreement with this conclusion.     

Peculiarities of magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Eu<Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript>

Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu_0.55Sr_0.45MnO₃ ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=10⁶ Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field H_C1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and H_C1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ _H ?ρ_H=0)/ρ _H is positive for H<H_C1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>H_C1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×10⁵ % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10^?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu_0.55Sr_0.45MnO₃, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ～3% of the sample volume is occupied by the FM phase; ～67%, by the CE-type AFM phase; and ～30%, by the A-type AFM phase.     

Studies on structural and electrical properties of Mg<Subscript>0. 5+y</Subscript> (Zr<Subscript>2-y</Subscript>Fe<Subscript>y</Subscript>) <Subscript>2</Subscript> (PO<Subscript>4</Subscript>) <Subscript>3</Subscript> ceramic electrolytes

The sample of Mg_{0. 5+y} (Zr_1-y Fe_y) ₂ (PO₄) ₃ (0.0 ≤y ≤0.5) was synthesized using the sol-gel method. The structures of the samples were investigated using X-ray diffraction and Fourier transform infrared spectroscopy measurement. XRD studies showed that samples had a monoclinic structure which was iso-structured with the parent compound, Mg_0.5Zr (PO₄) ₃. The complex impedance spectroscopy was carried out in the frequency range 1–6 MHz and temperature range 303 to 773 K to study the electrical properties of the electrolytes. The substitutions of Fe³⁺ with Zr⁴⁺ in the Mg_0.5Zr (PO₄) ₃ structure was introduced as an extrainterstitial Mg²⁺ ion in the modified structured. The compound of Mg_0.5+y (Zr_1-y Fe_y)₂(PO₄)₃ with y?=?0.4 gives a maximum conductivity value of 1.25?×?10^?5 S cm^?1 at room temperature and 7.18?×?10^?5 S cm^?1 at 773 K. Charge carrier concentration, mobile ion concentration, and ion hopping rate are calculated by fitting the conductance spectra to power law variation, σ _ac (ω)?=?σ _o ? +?Aω ^α . The charge carrier concentration and mobile ion concentration increases with increase of Fe³⁺ inclusion. This implies the increase in conductivity of the compounds was due to extra interstitial Mg²⁺ ions.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Electrical instability of LiCu<Subscript>2</Subscript>O<Subscript>2</Subscript> crystals

The temperature behavior of I-U curves and the field and temperature dependences of the electrical resistivity and dielectric permittivity of crystals of the LiCu₂O₂ phase have been studied. It was established that the crystals belong to p-type semiconductors and that their static resistivity in the range 80–260 K follows the Mott law ρ=Aexp(T₀/T)^1/4 describing variable-range hopping over localized states. At comparatively low electric fields, the crystals exhibit threshold switching and characteristic S-shaped I-U curves containing a region of negative differential resistivity. In the critical voltage region, jumps in the conductivity and dielectric permittivity are observed. Possible mechanisms of the disorder and electrical instability in these crystals are discussed.     

Magnetic and electrical properties of Fe<Subscript>1.91</Subscript>V<Subscript>0.09</Subscript>BO<Subscript>4</Subscript> warwickite

We have performed a complex investigation of the structure and the magnetic and electrical properties of a warwickite single crystal with the composition Fe_1.91V_0.09BO₄. The results of Mössbauer measurements at T=300 K indicate that there exist “localized” (Fe²⁺, Fe³⁺) and “delocalized” (Fe_2.5+) states distributed over two crystallographically nonequivalent positions. The results of magnetic measurements show that warwickite is a P-type ferrimagnet below T=130 K. The material exhibits hopping conductivity involving strongly interacting electrons. The experimental data are analyzed in comparison to the properties of the initial (unsubstituted) Fe₂BO₄ warwickite. The entire body of data on the electric conductivity and magnetization are interpreted on a qualitative basis.     

Internal friction of Li<Subscript>2</Subscript>B<Subscript>4</Subscript>O<Subscript>7</Subscript> single crystals

This paper reports on the results of measurements of the internal friction Q^?1 and the shear modulus G of Li₂B₄O₇ single crystals along the crystallographic directions [100] and [001] in the temperature range 300–550 K for strain amplitudes of (2–10)×10^?5 at infralow frequencies. The anomalies observed in Q^?1 and G in the temperature range 390–410 K are due to thermal activation of the mobility of lithium cations and their migration from one energetically equivalent position to another. A jump in the internal friction background is revealed in the vicinity of the Q^?1 and G anomalies for the Li₂B₄O₇ crystal. The magnitude of this jump depends on the crystallographic direction.     

AC and DC conductivity study of LiH<Subscript>2</Subscript>PO<Subscript>4</Subscript> compound using impedance spectroscopy

The lithium dihydrogen phosphate LiH₂PO₄ has been investigated by X-ray powder diffraction, scanning electron microscopy (SEM), and electrical impedance spectroscopy. The Rietveld refinements based on the XRD patterns show that the compound is crystallized in the orthorhombic system with Pna2₁ space group, and the refined unit cell parameters are a = 6.2428 Å, b = 7.6445 Å, and c = 6.873 Å. The electrical properties were studied using complex impedance spectroscopy as a function of frequency (10⁴–10⁷ Hz) at various temperatures (300–400 K). The Nyquist plots are well fitted to an equivalent circuit consisting of a series of combination of grains and inhomogeneous electrode surface effect. The frequency dependence of the conductivity is interpreted in terms of Jonscher’s law. Moreover, the near value of the activation energies obtained from the equivalent circuit and analysis of M″ confirms that the transport is through ion hopping mechanism dominated by the motion of the proton in the structure of the investigated material.     

The magnetization reversal in CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/CoFe<Subscript>2</Subscript> granular systems

The temperature-dependent field cooling (FC) and zero-field cooling (ZFC) magnetizations, i.e., M _FC and M _ZFC, measured under different magnetic fields from 500 Oe to 20 kOe have been investigated on two exchange–spring CoFe₂O₄/CoFe₂ composites with different relative content of CoFe₂. Two samples exhibit different magnetization reversal behaviors. With decreasing temperature, a progressive freezing of the moments in two composites occurs at a field-dependent irreversible temperature T _irr. For the sample with less CoFe₂, the curves of ?d(M _FC ? M _ZFC)/dT versus temperature T exhibit a broad peak at an intermediate temperature T ₂ below T _irr , and the moments are suggested not to fully freeze till the lowest measuring temperature 10 K. However, for the ?d(M _FC ? M _ZFC)/dT curves of the sample with more CoFe₂, besides a broad peat at an intermediate temperature T ₂, a rapid rise around the low temperature T ₁~15 K is observed, below which the moments are suggested to fully freeze. Increase of magnetic field from 2 kOe leads to the shift of T ₂ and T _irr towards a lower temperature, and the shift of T ₂ is attributable to the moment reversal of CoFe₂O₄.

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Graphical abstract CoFe₂O₄/CoFe₂ composites with different relative content of CoFe₂ were prepared by reducing CoFe₂O₄ in H₂ for 4 h (S4H) and 8 h (S8H). The temperature-dependent FC and ZFC magnetizations, i.e., M _FC and M _ZFC, under different magnetic fields from 500 Oe to 20 kOe have been investigated. Two samples exhibit different magnetization reversal behaviors. With decreasing temperature, a progressive freezing of the moments in two composites occurs at field-dependent irreversible temperature T _irr. For the S4H sample, the curves of ?d(M _FC ? M _ZFC)/dT versus temperature T exhibit a broad and field-dependent relaxing peak at T ₂ below T _irr (figure a), and the moments were suggested not to fully freeze till the lowest measuring temperature 10 K. However, for the S8H sample, it exhibits the reentrant spin-glass state around 50 K, as evidenced by a peak in the M _FC curve (inset in figure b) and as a result of the cooperative effects of the random anisotropy of CoFe₂O₄, exchange–spring occurring at the interface of CoFe₂O₄ and CoFe₂ together with the inter-particle dipolar interaction (figure c); in ?d(M _FC ? M _ZFC)/dT curves, besides a broad relaxing peat at T ₂, a rapid rise around the low-temperature T ₁~15 K is observed, below which the moments are suggested to fully freeze. Increase of magnetic field from 2 kOe leads to the shift of T ₂ and T _irr towards a lower temperature, and the shift of T ₂ is attributable to the moment reversal of CoFe₂O₄.

     

Frustrated antiferromagnetism in the Sr<Subscript>2</Subscript>YRuO<Subscript>6</Subscript> double perovskite

The spins of Ru⁵⁺ ions in Sr₂YRuO₆ form a face-centered cubic lattice with antiferromagnetic nearest neighbor interaction J≈25 meV. The antiferromagnetic structure of the first type experimentally observed below the Néel temperature T _N =26 K corresponds to four frustrated spins of 12 nearest neighbors. In the Heisenberg model in the spin-wave approximation, the frustrations already cause instability of the antiferromagnetic state at T=0 K. This state is stabilized by weak anisotropy D or exchange interaction I with the next-nearest neighbors. Low D/J～I/J～10^?3 values correspond to the experimental T _N and sublattice magnetic moment values.     

High-temperature complex impedance and modulus spectroscopic studies of doped Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-BaTiO<Subscript>3</Subscript> ferroelectric ceramics

Lead-free Na_0.5Bi_0.5TiO₃ (NBT) and (1 ? x)Na_0.5Bi_0.5TiO₃ + xBaTiO₃ with x = 0.1 and 0.2 (where x = 0.1 and 0.2 are named as NBT1 and NBT2, respectively), (1 ? y)Na_0.5Bi_0.5TiO₃ + yBa_0.925Nd_0.05TiO₃ with y = 0.1 and 0.2 (where y = 0.1 and 0.2 are named as NBT3 and NBT4, respectively)-based relaxor ferroelectric ceramics were prepared using the sol-gel method. The crystal structure was investigated by X-ray diffraction (XRD) at room temperature (RT). The XRD patterns confirmed the presence of the rhombohedral phase in all the samples. The electrical properties of the present NBT-based samples were investigated by complex impedance and the modulus spectroscopy technique in the temperature range of RT–600 °C. The AC conductivity was found to increase with the substitution of Ba²⁺ ions to the NBT sample whereas it significantly decreased with the addition of Nd³⁺ ions. The more anion vacancies in Ba-added samples and the lower anion vacancies in Nd-added samples were found to be responsible for higher and lower conductivities, respectively.