Fourth Diffraction Limited Storage Ring (DLSR) Workshop

The Fourth Diffraction Limited Storage Ring (DLSR) Workshop was held at Argonne National Laboratory's Advanced Photon Source from November 19 to 21, 2014. The three-day meeting was attended by 120 participants from 22 different institutions. Local organizers of the workshop were Lahsen Assoufid, Herman Cease, Glenn Decker, Kathy Harkay, Dean Haeffner, Dennis Mills, Connie Vanni, and Diane Wilkinson (all Advanced Photon Source). The workshop website is http://dlsr-workshop-2014.aps.anl.gov/.     

Enhancement of the thermal properties of silver-diamond composites with chromium carbide coating

The present work reports the enhancement of the thermal properties in Ag/diamond matrix composites reinforced with chromium carbide coated diamond particles. The coated diamond particles were characterized by x-ray diffraction, x-ray photoelectron spectroscopy and Raman spectra. The composites were synthesized by spark plasma sintering. The chromium carbide coating on the diamond particles resulted in composites exhibiting improved wettability and strong interfacial bonding between the diamond particles and Ag matrix. The composites with coated diamonds showed a low coefficient of thermal expansion of 8.24 × 10^?6/K and a high thermal conductivity of 695 W/mK at 60 % particle volume fraction, which greatly outperformed the composites with uncoated diamonds at the same particle volume fraction. The obtained results are useful for synthesizing Ag/diamond composites with greatly improved thermal performance.     

Chess 2001 users' meeting

Diamonds attract enormous interest as gemstones. This rather frivolous “application” is based on their optical properties and contributes about 95 percent of the turnover in the diamond industry. Another area of application, which may now be seen as a crude application, is a diamond-tipped tool for the abrasive and cutting industries. These applications exploit the hardness and wear resistance of diamond, and dominate the demand for synthetic diamond production. These applications do not place the most stringent requirements on the quality of diamond. As has become clear at this workshop, a crucial new role for diamond in an ultra-high technology area is emerging. Diamond devices at synchrotrons require near– theoretical values of perfection of the diamond lattice. This material is vital to the continued increase in beam performance as well as the expansion of the suite of measurement techniques of modern synchrotrons.

An international workshop on “diamond single crystals for 3rd and 4th generation X-ray sources” was held in Grenoble, France, on May 24–25, 2004.     

Numerical modeling of thermal loading of diamond crystal in X-ray FEL oscillators

Due to high reflectivity and high resolution of X-ray pulses, diamond is one of the most popular Bragg crystals serving as the reflecting mirror and mono-chromator in the next generation of free electron lasers(FELs).The energy deposition of X-rays will result in thermal heating, and thus lattice expansion of the diamond crystal,which may degrade the performance of X-ray FELs. In this paper, the thermal loading effect of diamond crystal for X-ray FEL oscillators has been systematically studied by combined simulation with Geant4 and ANSYS, and its dependence on the environmental temperature, crystal size, X-ray pulse repetition rate and pulse energy are presented. Our results show that taking the thermal loading effects into account, X-ray FEL oscillators are still robust and promising with an optimized design.     

Development of diamond-based X-ray detection for high-flux beamline diagnostics

High‐quality single‐crystal and polycrystalline chemical‐vapor‐deposition diamond detectors with platinum contacts have been tested at the white‐beam X28C beamline at the National Synchrotron Light Source under high‐flux conditions. The voltage dependence of these devices has been measured under both DC and pulsed‐bias conditions, establishing the presence or absence of photoconductive gain in each device. Linear response consistent with the theoretically determined ionization energy has been achieved over eleven orders of magnitude when combined with previous low‐flux studies. Temporal measurements with single‐crystal diamond detectors have resolved the nanosecond‐scale pulse structures of both the NSLS and the APS. Prototype single‐crystal quadrant detectors have provided the ability to simultaneously resolve the X‐ray beam position and obtain a quantitative measurement of the flux.     

Study of synthetic diamonds by dynamic nuclear polarization-enhanced13C nuclear magnetic resonance spectroscopy

Four I_b-type synthetic diamond crystals were studied by dynamic nuclear polarization (DNP)-enhanced high resolution solid state¹³C nuclear magnetic resonance (NMR) spectroscopy. The home built DNP magic-angle-spinning (MAS) NMR spectrometer operates at a field strength of 1.9 T and the highest DNP enhancement factor of synthetic diamonds came near to 10³. Comparing with I_b-type natural diamonds, the¹³C NMR linewidths of synthetic diamonds in static spectra are broader. The¹³C spin-lattice relaxation time and DNP polarization time of synthetic diamond are shorter than those of I_b-type natural diamond. From the hyperfine structure of the DNP enhancement curve, four kinds of nitrogen-centred free radicals could be identified in synthetic diamond.     

温度对Ib型和IIa型金刚石大单晶(100)表面特征的影响

本文在5.6 GPa, 1250–1340 ℃的条件下, 利用温度梯度法, 以FeNiMnCo 合金为触媒, 沿籽晶的(100)晶面成功合成了不同晶形的优质Ib型和IIa型金刚石大单晶. 利用激光拉曼附件显微镜, 分别对上述不同温度下合成的两类金刚石样品上表面(100)面的中心区域及棱角区域进行观察分析. 研究发现, Ib型和IIa型金刚石大单晶(100)晶面上从中心到棱角处黑色纹路的分布逐渐变黑变密集; 另外, 随着金刚石合成温度的升高, Ib型金刚石大单晶(100)面上黑色纹路由稀疏逐渐变稠密, 而IIa型金刚石大单晶的黑色纹路较为稀疏; Ib型金刚石大单晶的形貌特征表现为从低温晶体的不规则分布过渡到中温、高温晶体的典型树枝状分布. IIa型金刚石大单晶(100)面特征随温度变化规律与Ib型的类似. 这两类金刚石大单晶表面特征的差异可能是由于IIa 型金刚石具有比Ib型更小的生长速度和更少的氮含量. 最后, 对两类塔状金刚石大单晶进行拉曼光谱测试分析, 结果表明IIa型金刚石大单晶的品质较Ib型金刚石大单晶好.     

Thermal conductivity enhancement in Cu/diamond composites with surface-roughened diamonds

Cu/diamond composites have potential as a heat spreading material in small-scale devices. In this study, we show that the use of surface-roughened diamonds obtained by heat treatment under N₂ atmosphere and subsequently coated with a thin layer of Ti coating is a feasible method to effectively improve the interfacial bonding and thermal conductivity of Cu/diamond composites. The diamond surface state and prepared composites were investigated by the combination of X-ray diffraction, Raman spectroscopy and microstructure analysis. It is found that the surface-roughened diamonds are in favor of the formation of effective chemical bonds between diamonds and Ti coating through the formation of thin TiC layer and simultaneously provide increased Cu/diamond contact area, which are beneficial to largely decrease the interfacial thermal resistance and thus to greatly enhance the thermal conductivity of Cu/diamond composites.     

Synthesis of N-type semiconductor diamonds with sulfur,boron co-doping in FeNiMnCo-C system at high pressure and high temperature

A series of diamonds with boron and sulfur co-doping were synthesized in the Fe Ni Mn Co-C system by temperature gradient growth(TGG) under high pressure and high temperature(HPHT). Because of differences in additives, the resulting diamond crystals were colorless, blue-black, or yellow. Their morphologies were slab, tower, or minaret-like. Analysis of the x-ray photoelectron spectra(XPS) of these diamonds shows the presence of B, S, and N in samples from which N was not eliminated. But only the B dopant was assuredly incorporated in the samples from which N was eliminated. Resistivity and Hall mobility were 8.510 ?·cm and 760.870 cm~2/V·s, respectively, for a P-type diamond sample from which nitrogen was eliminated. Correspondingly, resistivity and Hall mobility were 4.211×10~5 ?·cm and 76.300 cm~2/V·s for an N-type diamond sample from which nitrogen was not eliminated. Large N-type diamonds of type Ib with B–S doping were acquired.     

天然钻石与合成钻石的特异性光谱初步研究

通过紫外-可见-近红外(UV-Vis-NIR) 吸收光谱、傅里叶变换红外(FTIR)光谱及钻石观测仪( DiamondViewTM)对天然钻石、经辐照或热处理的天然钻石、高温高压(HTHP)合成钻石及化学气相沉积(CVD)合成钻石进行了较系统的谱图及微区生长结构的对比研究。结果表明：天然钻石、经辐照或高温退火处理后的天然钻石、高温高压(HTHP)合成钻石的UV-Vis-NIR吸收谱图在200～1 100 nm区间谱图的反射率变化明显。相比之下,CVD合成钻石的反射率的变化相对较小。基于钻石样品的红外光谱分析,在其图谱中的800～1 600 cm-1区间,合成钻石样品、特别是CVD合成钻石在上述区间无明显的特征吸收峰位。此外,DiamondViewTM检测表明：一般而言,经HTHP处理后的CVD合成钻石出现平行的位错线,并呈现淡蓝色荧光。部分天然钻石可见典型的八面体生长线或称为树的年轮状图像,且因样品经辐照与高温高压处理后其荧光图像的颜色发生改变。高温高压合成钻石呈现出块状几何生长图像。限于钻石样品类别的多样性及合成钻石工艺的复杂且不断更新特征,天然钻石与合成钻石 的UV-Vis-NIR或FTIR光谱特征存在一定的相似性,因此不具有典型天然钻石图谱特征的样品需进一步辅以DiamondViewTM、光致发光光谱等其他检测仪器予以综合分析。     

Diamond. Part 2

A brief review is given of some recent solid-state physics studies made on diamond. These include both the ultra-violet and the infra-red absorption spectra of diamond; the classification of diamonds; a survey of the semiconducting properties exhibited by some diamonds; diamond luminescence; and some of the effects produced when diamonds are subjected to irradiation by high energy particles and by neutrons. The recently developed diamond radiation counter and the advantages of such a counting system are discussed.     

Electrical and structural properties of diamond films implanted by various doses of oxygen ions

Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 10¹⁴cm^-2 or 10¹⁵cm^-2 is favourable for producing less damaged O-doped diamond films.     

On the possible origins of natural diamonds

A brief survey of the current theories of formation of diamonds in nature leads to the hypothesis which suggests the possibility of natural diamonds having formed metastably—a hypothesis which has not been enjoying much experimental support in its favour. The authors present briefly some aspects of the investigations which have resulted in demonstrating a new process whereby the dissolution and metastable autoepitaxial (re)crystallization of diamond occurs at atmospheric pressure. A comparison of certain reported growth characteristics of natural (terrestrial) and synthetic (high pressure, solvent-catalyst) diamonds with those of the metastable diamond overgrowths reveal many striking similarities. These results therefore serve as evidence to support the metastable origin hypothesis.     

TEM and HREM of diamond crystals grown on Si tips: structure and results of ion-beam-treatment

Diamond single crystals were grown on the silicon whiskers by a hot filament chemical vapor deposition technique at the filament temperature about 2100 degrees C and the temperature of support 800 degrees C. Specimens were examined by SEM, TEM, HRTEM and SAED. When the filament temperature was about 1900 degrees C globular polycrystalline diamond particles were grown. At a support temperature more then 800 degrees C SiC nanoparticles were formed. To investigate the ion etching process of the silicon tip/diamond system, tips were treated with an Ar(+) beam with energy up to 30 kV. The results depend on fluence: at 4 x 10(18)ion/cm(2) diamonds and partially Si tips were destroyed, amorphous layer was formed (sometimes with nanometric size fragments of diamond); at 1 x 10(18)ion/cm(2) sharpened diamonds (radius of curvature about 20 nm) covered with amorphous layer (radius about 80 nm) probably with nanoclusters of diamond were observed; at 4.4 x 10(17) ion/cm(2) there was no visible tip sharpening but formation of amorphous thick layer occurred. The emission characteristics of Si tips covered with diamond were improved due to ion treatment. Since such tips in our case were covered with amorphous layer containing nanometric size fragments of diamond, we suppose this layer is responsible for electron emission improvement.     

Survey meter combining CVD diamond and silicon detectors for wide range of dose rates and high accumulated doses

We have developed a prototype of a survey meter combining a CVD diamond detector and silicon detectors to appropriately take temporal measurements of γ-ray radiations over a wide range of the dose rates and to measure high accumulated doses of γ-ray radiations. In order to carry out this, at first, we have studied the radiation hardness of diamond detectors suitably fabricated with high-quality single-crystalline CVD diamond films to confirm that such CVD diamond detectors have greatly superior radiation hardness, compared with commercially available silicon detectors. It is evidenced that the performance of the CVD diamond detector did not significantly change even after heavy γ-ray irradiation of 0.7 MGy while the silicon detectors have a remarkable increase in the dark current, a detection peak shift to the low energy side, and a decrease in detection counts for 5.486-MeV α particles. Due to a size limitation of the CVD diamond detector, such a CVD diamond detector was combined with six commercially available silicon detectors to fabricate a survey meter which can appropriately work under severe irradiation conditions, or, at accumulated doses larger than at least 0.5 MGy and which can cover a wide range of the dose rates from 1 μGy/h to at least 1 kGy/h. The prototype survey meter had a practically useful linearity in this dose rate range. Thus, we have confirmed that such a diamond-Si combined survey meter can be put into practical use.     

Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility

We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature (HPHT) conditions (5.9 GPa and 1290℃). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy (XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy (FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm²·V^-1·s^-1, possible reasons were discussed in the paper.     

天然与高温高压合成金刚石的RAMAN与PL光谱研究

天然、Fe-C(H)系及Ni-C系高温高压合成金刚石的晶体形态、Raman光谱及PL谱研究结果表明：Fe-C(H)系高温高压合成金刚石多为类似于天然金刚石的八面体形态,Ni-C系高温高压合成金刚石的晶体形态多为六八面体;天然金刚石的品级最佳、所含缺陷最少,Fe-C(H)系高温高压合成金刚石次之,Ni-C系高温高压合成金刚石品级最差、所含缺陷最多;金刚石在形成过程中,除结晶生长过程外,还应该存在“排杂”过程;人们在分析天然与HPHT合成金刚石形成过程之间的关联时,除要考虑两者形成的物质体系差异外,还应该充分关注时间、空间因素在金刚石形成过程中的意义。     

Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions

Large diamonds have successfully been synthesized from FeNiMnCo-S-C system at temperatures of 1255-1393 ℃and pressures of 5.3-5.5 GPa.Because of the presence of sulfur additive,the morphology and color of the large diamond crystals change obviously.The content and shape of inclusions change with increasing sulfur additive.It is found that the pressure and temperature conditions required for the synthesis decrease to some extent with the increase of S additive,which results in left down of the V-shape region.The Raman spectra show that the introduction of additive sulfur reduces the quality of the large diamond crystals.The x-ray photoelectron spectroscopy(XPS) spectra show the presence of S in the diamonds.Furthermore,the electrical properties of the large diamond crystals are tested by a four-point probe and the Hall effect method.When sulfur in the cell of diamond is up to 4.0 wt.%,the resistance of the diamond is 9.628×10~5 Ω·cm.It is shown that the large single crystal samples are n type semiconductors.This work is helpful for the further research and application of sulfur-doped semiconductor large diamond.     

Diffraction enhanced imaging of soft tissues

The APS hosted a two-day workshop on Catalysis Research at the APS on September 12-13, 2005. The goal of the workshop was to evaluate current catalysis-related research at the APS and to plan future directions. The outcome of the meeting will be a report with recommendations to promote new, and support current, catalysis research at the APS. The workshop was attended by 82 participants representing industry, national laboratories, and universities.     

山东蒙阴金刚石多晶的显微红外光谱研究及其成因意义

山东蒙阴金刚石多晶可划分为多角刻面状和浑圆状金刚石多晶两大类,它们的显微红外光谱研究结果表明,金刚石多晶中的氮含量较低,介于16.69～72.81μg.g-1之间,且同一金刚石多晶的不同金刚石晶粒(或部位)中的氮含量不相同;刻面状金刚石多晶均为ⅠaAB型,且A心的浓度大于B心的浓度。浑圆状金刚石多晶也多为ⅠaAB型,但具有更高浓度的B心,且存在少数同时包含单替代氮、A心和B心的浑圆状金刚石多晶;金刚石多晶不是在金刚石颗粒的成核阶段所形成的,而是在金刚石长大期间或金刚石颗粒形成后的某个特殊条件下聚集而成;山东蒙阴金刚石多晶可能形成于氮浓度较低的较深部地幔。同时,多角刻面状金刚石多晶的形成时间稍晚于金刚石单晶体,浑圆状金刚石多晶的形成时间明显早于金刚石单晶体。