Large-area Sb2Te3 nanowire arrays

High-density large-area nanowire arrays of thermoelectric material Sb(2)Te(3) have been successfully prepared using electrochemical deposition into the channels of the porous anodic alumina membrane. The morphologies, structure, and composition of the as-prepared Sb(2)Te(3) nanowires have been characterized using field-emission scanning electron microscopy, transmission electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. Individual Sb(2)Te(3) nanowires are single crystalline and continuous with uniform diameters ( approximately 50 nm) throughout the entire length. The atomic ratio of Sb to Te is very close to the 2:3 stoichiometry.     

Vapor-liquid-solid and vapor-solid growth of phase-change Sb2Te3 nanowires and Sb2Te3/GeTe nanowire heterostructures

We report the synthesis and characterization of radial heterostructures composed of an antimony telluride (Sb2Te3) core and a germanium telluride (GeTe) shell, as well as an improved synthesis of Sb2Te3 nanowires. The synthesis of the heterostructures employs Au-catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) mechanisms. Energy-dispersive X-ray spectrometry indicates that Sb and Ge are localized in the Sb2Te3 and GeTe portions, respectively, confirming the alloy-free composition in the core/shell heterostructures. Transmission electron microscopy and diffraction studies show that Sb2Te3 and GeTe regions exhibit rhombohedral crystal structure. Both Sb2Te3 and GeTe grow along the [110] direction with an epitaxial interface between them. Electrical characterization of individual nanowires and nanowire heterostructures demonstrates that these nanostructures exhibit memory-switching behavior.     

Pressure-induced disordered substitution alloy in Sb2Te3

A new type of disordered substitution alloy of Sb and Te at above 15.1 GPa was discovered by performing in situ high-pressure angle-dispersive X-ray diffraction experiments on antimony telluride (Sb(2)Te(3)), a topological insulator and thermoelectric material, at room temperature. In this disordered substitution alloy, Sb(2)Te(3) crystallizes into a monoclinic structure with the space group C2/m, which is different from the corresponding high-pressure phase of the similar isostructural compound Bi(2)Te(3). Above 19.8 GPa, Sb(2)Te(3) adopts a body-centered-cubic structure with the disordered atomic array in the crystal lattice. The in situ high-pressure experiments down to about 13 K show that Sb(2)Te(3) undergoes the same phase-transition sequence with increasing pressure at low temperature, with almost the same phase-transition pressures.     

Formation and characterization of Sb2Te3 nanofilms on Pt by electrochemical atomic layer epitaxy

A nanocrystalline Sb2Te3 VA-VIA group compound thin film was grown via the route of electrochemical atomic layer epitaxy (ECALE) in this work for the first time. The electrochemical behavior of Te and Sb on Pt, Te on Sb-covered Pt, and Sb on Te-covered Pt was studied by methods of cyclic voltammetry, anode potentiodynamic scanning, and coulometry. A steady deposition of the Sb2Te3 compound could be attained after negatively stepped adjusting of the UPD potentials of Sb and Te on Pt in each of the first 40 depositing cycles. The structure of the deposit was proven to be the Sb2Te3 compound by X-ray diffraction. The 2:3 stoichiometric ratio of Sb to Te was verified by EDX quantitative analysis, which is consistent with the result of coulometric analysis. A nanocystalline microstructure was observed for the Sb2Te3 deposits, and the average grain size is about 20 nm. Cross-sectional SEM observation shows an interface layer about 19 nm in thickness sandwiched between the Sb2Te3 nanocrystalline deposit and the Pt substrate surface. The optical band gap of the deposited Sb2Te3 film was determined as 0.42 eV by FTIR spectroscopy and it is blueshifted in comparison with that of the bulk Sb2Te3 single crystal because of its nanocrystalline microstructure.     

Electrochemical aspects and structure characterization of VA-VIA compound semiconductor Bi2Te3/Sb2Te3 superlattice thin films via electrochemical atomic layer epitaxy

This paper concerns the electrochemical atom-by-atom growth of VA-VIA compound semiconductor thin film superlattice structures using electrochemical atomic layer epitaxy. The combination of the Bi2Te3 and Sb2Te3 programs and Bi2Te3/Sb2Te3 thin film superlattice with 18 periods, where each period involved 21 cycles of Bi2Te3 followed by 21 cycles of Sb2Te3, is reported here. According to the angular distance between the satellite and the Bragg peak, a period of 23 nm for the superlattice was indicated from the X-ray diffraction (XRD) spectrum. An overall composition of Bi 0.25Sb0.16Te0.58, suggesting the 2:3 stoichiometric ratio of total content of Bi and Sb to Te, as expected for the format of the Bi2Te3/Sb2Te3 compound, was further verified by energy dispersive X-ray quantitative analysis. Both field-emission scanning electron microscopy and XRD data indicated the deposit grows by a complex mechanism involving some 3D nucleation and growth in parallel with underpotential deposition. The optical band gap of the deposited superlattice film was determined as 0.15 eV by Fourier transform infrared spectroscopy and depicts an allowed direct type of transition. Raman spectrum observation with annealed and unannealed superlattice sample showed that the LIF mode has presented, suggesting a perfect AB/CB bonding in the superlattice interface.     

添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能

在N2气保护下,采用电磁感应法制备了添加La的Bi2Te3和Bi0.5Sb1.5Te3。运用X射线粉末衍射、电感耦合等离子光谱和扫描电子显微镜对材料的物相成分和形貌进行了表征。研究了La对Bi2Te3和Bi0.5Sb1.5Te3热电材料的电导率(σ)、Seebeck系数(S)和热导率(κ)的影响。实验结果表明,添加La明显降低了2种材料的热导率,提高了热电优值(ZT),添加La的Bi0.5Sb1.5Te3的热电优值在室温超过了1。     

The anion exchange behavior of Te and Sb

The absorption behavior of Te and Sb in different oxidation states by anion exchange resins in hydrochloric acid medium has been studied. Distribution coefficients for Te(IV), Te(VI) as a function of HCl acid concentration (upto 3M HCl) have been determined. The absorbability for Sb(III) was noticed to be very high and could not be eluted out of the column using HCl as eluent. Sb(V) could be eluted quantitatively using 3M HCl. The present study clearly indicate that due to the EC/β⁺ decay of the parent isotopes^117,118Te, the daughter nuclei^117,118Sb are produced predominantly as Sb(III).     

Synthesis and characterization of Ge2Sb2Te5 nanowires with memory switching effect

Ge2Sb2Te5 nanowires (NWs) were synthesized by vaporizing GeTe, Sb, and Te precursors assisted by metal catalysts. Current-voltage measurement of the Ge2Sb2Te5 NW device displays fast and reversible switching between two distinct resistive states, which is due to the crystalline-amorphous phase transition nature of these materials     

Electron-rich rods as building blocks for Sb strips and Te sheets.

We analyze the bonding in a number of networks of heavy main group elements comprised of finite-length linear chains fused at right angles. Isolated linear chain building blocks may be understood easily by analogy with three-orbital four-electron "hypervalent" bonding picture in such molecules as I(3)(-) and XeF(2). After deriving the appropriate electron-counting rules for such linear units, we proceed in an aufbau to fuse these chains into simple (and not so simple) infinite networks. It is proposed that (a) infinite Sb(3) ribbons of vertex sharing squares are stable for an electron count of 20 electrons per three atoms (i.e., ); (b) sidewise fused Sb double ribbons are stable for an electron count of 38 electrons per six atoms (i.e., ); (c) Sb(4) strips cut from a square lattice are stable at the electron count of 24 electrons per four atoms (i.e., ); (d) Te(6) defect square sheets are stable at the electron count of 40 electrons per six atoms (i.e., ). The electronic structures of the solid-state compounds containing these networks, namely La(12)Mn(2)Sb(30), alpha-ZrSb(2), beta-ZrSb(2), Cs(3)Te(22), and Cs(4)Te(28), are elaborated. We propose preferred electron counts for two hypothetical Sb ribbons derived from the Sb(3) ribbon in La(12)Mn(2)Sb(30). A possibility of geometry distortion modulation by excess charge in lattices comprised of even-membered linear units is suggested.     

Elemental distribution and thermoelectric properties of layered tellurides 39R-M(0.067)Sb(0.667)Te(0.266) (M=Ge, Sn)

The isostructural phases 39R‐Ge_0.067Sb_0.667Te_0.266 (R$\bar 3The isostructural phases 39R-Ge(0.067)Sb(0.667)Te(0.266) (R3m, a=4.2649(1), c=75.061(2) ?) and 39R-Sn(0.067)Sb(0.667)Te(0.266) (R3m, a=4.2959(1), c=75.392(2) ?) were prepared by quenching stoichiometric melts of the pure elements and subsequent annealing at moderate temperatures. Their structures are comparable to "superlattices" synthesized by layer-by-layer deposition onto a substrate. These structures show no stacking disorder by electron microscopy. The structure of the metastable layered phases are similar to that of 39R-Sb(10)Te(3) (equivalent to Sb(0.769)Te(0.231)), which contains four A7 gray-arsenic-type layers of antimony alternating with Sb(2)Te(3) slabs. Joint refinements on single-crystal diffraction data using synchrotron radiation at several K edges were performed to enhance the scattering contrast. These refinements show that the elemental distributions at some atom positions are disordered whereas otherwise the structures are long-range ordered. The variation of the elemental concentration correlates with the variation in interatomic distance. Z-contrast scanning transmission electron microscopy (HAADF-STEM) on 39R-Ge(0.067)Sb(0.667)Te(0.266) confirms the presence of concentration gradients. The carrier-type of the isostructural metal (A7-type lamellae)-semiconductor heterostructures (Ge/Sn-doped Sb(2)Te(3) slabs) varies from n-type (Ge(0.067)Sb(0.667)Te(0.266)) to p-type (Sn(0.067)Sb(0.667)Te(0.266)). Although the absolute values of the Seebeck coefficient reached about 50-70 μV/K and the electrical conductivity is relatively high, the two isotypic phases exhibit a maximal thermoelectric figure of merit (ZT) of 0.06 at 400 °C as their thermal conductivity (κ≈8-9.5 W/mK at 400 °C) lies interestingly in between that of antimony and pure Sb(2)Te(3).     

The Sodium Antimony Telluridogermanate(III) Na9Sb[Ge2Te6]2

Systematic studies in the quaternary system Na/Ge/Sb/Te yielded the new compound Na₉Sb[Ge₂Te₆]₂. Its crystal structure is isotypic to Na₉Sb[Ge₂Se₆]₂ (space group C2/c with a = 9.541(2), b = 26.253(7), c = 7.5820(18) Å and β = 122.233(15)°, Z = 2). The structure is characterized by Ge–Ge dumbbells that are octahedrally coordinated by Te, forming ethane‐like [Ge₂Te₆]^6– anions. Cation sites are occupied by Na⁺ as well as shared by Na⁺ and Sb³⁺. Na₉Sb[Ge₂Te₆]₂ is formally obtained from the reaction of one equivalent Na₈[Ge₄Te₁₀] and one equivalent NaSbTe₂. In contrast to members of the metastable solid solution series (NaSbTe₂)_1–x(GeTe)_x, Na₉Sb[Ge₂Te₆]₂ is a thermodynamically stable compound. It is a semiconductor with a bandgap of 1.51 eV.     

Rb(4)Hg(5)(Te(2))(2)(Te(3))(2)Te(3), [Zn(en)3](4)In(16)(Te2)4(Te3)Te22, and K2Cu2(Te2)(Te3): novel metal polytellurides with unusual metal-tellurium coordination

Three novel metal polytellurides Rb(4)Hg(5)(Te(2))(2)(Te(3))(2)Te(3) (I), [Zn(en)(3)](4)In(16)(Te(2))(4)(Te(3))Te(22) (II), and K(2)Cu(2)(Te(2))(Te(3)) (III) have been prepared by solvothermal reactions in superheated ethylenediamine at 160 degrees C. Their crystal structures have been determined by single-crystal X-ray diffraction techniques. Crystal data for I: space group Pnma, a = 9.803(2) A, b = 9.124(2) A, c = 34.714(7) A, Z = 4. Crystal data for II: space group C2/c, a = 36.814(7) A, b = 16.908(3) A, c = 25.302(5) A, beta = 128.46(3) degrees, Z = 4. Crystal data for III: space group Cmcm, a = 11.386(2) A, b = 7.756(2) A, c = 11.985(2) A, Z = 4. The crystal structure of I consists of 1D infinite ribbons of [Hg(5)(Te(2))(2)(Te(3))(2)Te(3)](4-), which are composed of tetrahedral HgTe(4) and trigonal HgTe(3) units connected through the bridging Te(2-), (Te(2))(2-), and (Te(3))(2-) ligands. II is a layered compound containing InTe(4) tetrahedra that share corners and edges via Te, Te(2), and Te(3) units to form a 2D slab that contains relatively large voids. The [Zn(en)(3)](2+) template cations are filled in these voids and between the slabs. The primary building blocks of III are CuTe(4) tetrahedra that are linked by intralayer (Te(3))(2-) and interlayer (Te(2))(2-) units to form a 3D network with open channels that are occupied by the K(+) cations. All three compounds are rare polytelluride products of solvothermal reactions that contain both Te(2) and Te(3) fragments with unusual metal-tellurium coordination.     

Preparation of a118Te/118Sb radionuclide generator

The development of a new radionuclide generator, based on¹¹⁸Te/¹¹⁸Sb, has been studied. The 3.5 minute¹¹⁸Sb daughter activity decays principally by positron emission and has potential use as a flow tracer. The¹¹⁸Te parent is conveniently produced by proton bombardment of antimony targets. A simple and efficient scheme for the separation of radiotellurium from proton-irradiated antimony targets has been developed, and thin-target cross sections for¹²¹Sb(p, 4n)¹¹⁸Te and competing reactions have been determined. For antimony targets irradiated with 46 MeV protons, the yields (mCi/g Ah) of¹¹⁸Te,^119mTe and¹¹⁹Te were measured to be 0.71, 0.33 and 1.9, respectively. The adsorption and elution characteristics of activated carbon for tellurium have been evaluated for use as a column chromatography adsorbent in a¹¹⁸Te/¹¹⁸Sb generator. The conditions for optimal¹¹⁸Sb elution and minimal¹¹⁸Te breakthrough for promising systems are presented.     

Amorphous structure and electronic properties of the Ge1Sb2Te4 phase change material

Ge1Sb2Te4 is one of the most commonly used phase change materials, due to the large optical and electrical contrast between a metastable crystalline phase and the amorphous phase. We use ab initio molecular dynamics to generate an amorphous Ge1Sb2Te4 structure. By analysing the distance distributions, we show that the structure can be analysed in terms of 21% of tetrahedrally coordinated Ge atoms and 79% of 3-fold Ge atoms. These are involved in distorted octahedral shells with bond length correlations that are similar to the a-GeTe structure as a consequence of a Peierls-distortion. The electronic properties are shown to be in reasonable agreement with the experiment with an electronic gap of 0.45 eV with. The optical conductivity curve is also in agreement with the experiment, with a maximal conductivity at an energy of ～3 eV.     

Conversion of hexagonal Sb2Te3 nanoplates into nanorings driven by growth temperature

We describe a novel route for the conversion of hexagonal Sb(2)Te(3) nanoplates into nanorings driven by growth temperature in a simple solvothermal process. The transmission electron microscopy was employed to investigate systemically the morphology, size, crystallinity, and microstructure of the as-prepared products. The experiments indicated that the growth temperature had a great effect on the morphology of antimony telluride nanostructures. When the experiments were conducted at 200 °C, the hexagonal antimony telluride nanoplates were obtained. However, if the experiments were carried out at higher temperature of 230 °C, the hexagonal antimony telluride nanorings were achieved by dissolution of the inner part with a higher density of defects of the hexagonal nanoplates for the first time. A possible formation mechanism was proposed on the basis of experimental results and analysis. This work may open a new rational route for the synthesis of the hexagonal antimony telluride nanorings, which may have scientific and technological applications in various functional devices.     

Glass-forming ability in the GeSbTeSe quaternary system

The glass—forming regions in the quaternary system GeSbTeSe have been obtained for quenching in air and for a constant cooling rate of 5°C min^?1. The boundaries of the glass-forming regions and the thermal behaviour of the samples have been deduced from differential thermal analysis and X-ray diffraction. The results may be compared with some limited determinations of glass-forming ability in TeSe, GeTe, GeTeSe and GeSbSe systems, allowing for the fact that in the present work the experimental parameters for preparing and quenching the melts are identical for all the compositions studied. The formation and stability of glasses is discussed in terms of the obtained glass-forming regions and the observed thermal behaviour in differential thermal analysis measurements. Potential-device quality memory and switching compositions are suggested.     

Separation of trace elements,In(III), Sn(IV), Sb(V) and Te(IV) by adsorption on activated carbon and graphite

Adsorption behaviour of trace elements, In(III), Sn(IV), Sb(V) and Te(IV) on activated carbon and graphite powder was studied. Adsorption characteristics of the ions enabled the separation of In(III)–Sn(IV), Sn(IV)–Sb(V) and Sb(V)–Te(IV) pairs. Applications to practical separation, milking of^113mIn from¹¹³Sn, removal of tin impurity from¹¹⁹Sb, and milking of¹¹⁹Sb from^119mTe, are presented.     

CsPb3Bi3Te8 and CsPb4Bi3Te9: low-dimensional compounds and the homologous series CsPbmBi3Te5 + m

Two new thermoelectric materials of quaternary bismuth telluride CsPb3Bi3Te8 and CsPb4Bi3Te9 are reported, which are members of a homologous series featuring anionic slabs [PbmBi3Te5 + m]- (m = 1-4) of monotonically increasing thickness.     

Synthesis and characterization of copper-, zinc-, manganese-, and cobalt-substituted dimeric heteropolyanions, [(alpha-XW9O33)2M3(H2O)3](n-) (n = 12, X =As(III), Sb(III), M = Cu(2+), Zn(2+); n = 10, X = Se(IV), Te(IV), M = Cu(2+) and [(alpha-AsW9O33)2WO(H2O)M2(H2O)2](10-) (M = Zn(2+), Mn(2+), Co(2+)

Interaction of the lacunary [alpha-XW9O33](9-) (X = As(III), Sb(III)) with Cu(2+) and Zn(2+) ions in neutral, aqueous medium leads to the formation of dimeric polyoxoanions, [(alpha-XW9O33)2M3(H2O)3](12-) (M = Cu(2+), Zn(2+); X = As(III), Sb(III)), in high yield. The selenium and tellurium analogues of the copper-containing heteropolyanions are also reported: [(alpha-XW9O33)2Cu3(H2O)3](10-) (X = Se(IV), Te(IV)). The polyanions consist of two [alpha-XW9O33] units joined by three equivalent Cu(2+) (X = As, Sb, Se, Te) or Zn(2+) (X = As, Sb) ions. All copper and zinc ions have one terminal water molecule resulting in square-pyramidal coordination geometry. Therefore, the title anions have idealized D3h symmetry. The space between the three transition metal ions is occupied by three sodium ions (M = Cu(2+), Zn(2+); X = As(III), Sb(III)) or potassium ions (M = Cu(2+); X = Se(IV), Te(IV)) leading to a central belt of six metal atoms alternating in position. Reaction of [alpha-AsW9O33](9-) with Zn(2+), Co(2+), and Mn(2+) ions in acidic medium (pH = 4-5) results in the same structural type but with a lower degree of transition-metal substitution, [(alpha-AsW9O33)2WO(H2O)M2(H2O)2](10-) (M = Zn(2+), Co(2+), Mn(2+)). All nine compounds are characterized by single-crystal X-ray diffraction, IR spectroscopy, and elemental analysis. The solution properties of [(alpha-XW9O33)2Zn3(H2O)3](12-) (X = As(III), Sb(III)) were also studied by 183W-NMR spectroscopy.     

Nanostructures versus solid solutions: low lattice thermal conductivity and enhanced thermoelectric figure of merit in Pb9.6Sb0.2Te10-xSex bulk materials

The series of Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) compounds with different Se content (x) were prepared, and their structure was investigated at the atomic and nanosized regime level. Thermoelectric properties were measured in the temperature range from 300 to 700 K. The Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) series was designed after the refinement of the single-crystal structure of Pb(3.82)Sb(0.12)Te(4) (Pb(9.6)Sb(0.3)Te(10); S.G. Pmm) by substituting isoelectronically in anion positions Te by Se. The Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x)() compounds show significantly lower lattice thermal conductivity (kappa(L)) compared to the well-known PbTe(1)(-)(x)Se(x) solid solutions. For Pb(9.6)Sb(0.2)Te(3)Se(7) (x = 7), a kappa(L) value as low as 0.40 W/m.K was determined at 700 K. High-resolution transmission electron microscopy of several Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) samples showed widely distributed Sb-rich nanocrystals in the samples which is the key feature for the strong reduction of the lattice thermal conductivity. The reduction of kappa(L) results in a significantly enhanced thermoelectric figure of merit of Pb(9.6)Sb(0.2)Te(10)(-)(x)Se(x) compared to the corresponding PbTe(1)(-)(x)Se(x) solid solution alloys. For Pb(9.6)Sb(0.2)Te(3)Se(7) (x = 7), a maximum figure of merit of ZT approximately 1.2 was obtained at approximately 650 K. This value is about 50% higher than that of the state-of-the-art n-type PbTe. The work provides experimental validation of the theoretical concept that embedded nanocrystals can promote strong scattering of acoustic phonons.