Rotatable anisotropy of epitaxial Fe<Subscript>1−x</Subscript>Ga<Subscript>x</Subscript> thin films

We show by a combined magnetic force microscopy and synchrotron radiation spectroscopy study that stripe-like patterned magnetic domains are present in Fe_1?x Ga _x thin films. These stripes, whose origin is attributed to an out-of-plane magnetic component, can be rotated by an external magnetic field.     

Phonon and electron-hole plasma effects on binding energies of excitons in wurtzite GaN/In<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>N quantum wells

The binding energy of an exciton screened by the electron-hole plasma in a wurtzite GaN/In _x Ga_1−x N quantum well (in the case of 0.1 < x < 1 within which the interface phonon modes play a dominant role) is calculated including the exciton-phonon interaction by a variational method combined with a self-consistent procedure. The coupling between the exciton and various longitudinal-like optical phonon modes is considered to demonstrate the polaronic effect which strongly depends on the exciton wave function. All of the built-in electric field, the exciton-phonon interaction and the electron-hole plasma weaken the Coulomb coupling between an electron and a hole to reduce the binding energy since the former separates the wave functions of the electron and hole in the z direction and the later two enlarge the exciton Bohr radius. The electron-hole plasma not only restrains the built-in electric field, but also reduces the polaronic effect to the binding energy.     

Reverse engineering of Al<Subscript>x</Subscript>Ga<Subscript>1−x</Subscript>As/GaAs structures composition by reflectance spectroscopy

The paper presents the application of non-modulation reflectance method for composition profiling of epitaxial Al_xGa_−xAs/GaAs structures. This non-destructive method is based on spectral measurements and theoretical reflectance spectrum matching. This is a very accurate and sensitive method of determining the Al composition in Al_xGa_1−xAs layers and structures with resolution down to 1 nm. In this work, the authors describe theoretic principles of this method and present experimental results of characterization of different AlGaAs structures to prove the potential of the worked out method.     

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si<Subscript>1−x</Subscript> Ge<Subscript>x</Subscript>/Ge/Si<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript> type-I quantum wells

This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si_1?x Ge _x /Si_1?y Ge _y heterointerfaces in Γ _15C , Γ _2′C and L upper bands minima, as well as the room-temperature strained (vs. relaxed) band gaps deduced from the classical model-solid theory. Based upon the obtained data, we propose a type-I W-like Si_1?y Ge _y /Si_1?x Ge _x /Ge/Si_1?x Ge _x /Si_1?y Ge _y quantum wells heterostructure optimized in terms of compositions and thicknesses. Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias voltage. An accurate investigation of the optical properties of this heterostructure is done by calculating the energies of the interband transitions and their oscillator strengths. Moreover, a detailed computation of the bias-voltage evolution of the absorption spectra is presented. These calculations prove the existence of type-I band alignment at Γ _2′C point in compressively strained Ge quantum wells grown on relaxed Ge-rich Si_1?y Ge _y buffers. The strong absorption coefficient (> 8 × 10³ cm^-1) and the large Stark effect (0.1 eV @ 2 V) of the Γ _2′C transitions thresholds open up perspectives for application of these heterostructures for near-infrared optical modulators.     

Field-induced valence transition in EuPtP<Subscript>1−x</Subscript>As<Subscript>x</Subscript>

The ternary compound EuPtP exhibits two valence transitions at T ₁ = 235 K and T ₂ = 190 K. In order to examine a field-induced valence transition of Eu, we synthesized EuPtP_1−x As _x compounds with 0.05 ≤ x ≤ 0.5 and studied the magnetic and valence behavior. The substitution of As for P increases the lattice volume linearly and decreases both valence transition temperatures, T ₁ and T ₂, in contrast to the behavior under external pressures. The magnetization process in a pulsed magnetic field revealed that EuPtP_0.5As_0.5 exhibits an onset of metamagnetic transition above 50 T with a large hysteresis, which evidences a first-order field-induced valence transition. The analysis of the magnetization curves of x = 0.5 at various temperatures has demonstrated that the field-induced transition is essentially the same as the transition induced by temperature at T ₁.     

Effect of Al and Ga interdiffusion on the electronic states in GaAs/Ga<Subscript>1−x</Subscript>Al<Subscript>x</Subscript>As semiconductor superlattice

The effect of interdiffusion of Al and Ga atoms on the confining potential and band structure of a three-dimensional superlattice, composed of initially spherical GaAs/Ga_1?xAl_xAs quantum dots, is investigated in the framework of the modified Wood-Saxon potential model. It is shown that the interdiffusion leads to the disappearance of the quantum dots’ spherical symmetry and to the broadening of the superlattice energy minibands.     

Second harmonic generation in AlGaN,GaN and Al<Subscript>x</Subscript>Ga<Subscript>1–x</Subscript>N/GaN multiple quantum well structures

Second harmonic generation coefficients of GaN and Al_xGa_1–xN (x=0.08) thin films deposited by MOCVD on a sapphire 0001 substrate were deduced through the standard Maker fringes method. Measurements were performed at =1064 nm using a Nd:YAG Q-Switched laser. The measured ratio between the d₃₃ and d₃₁ coefficients allowed one to retrieve information on the degree of crystallinity of the thin film samples that was found to be higher in thicker films. The presence of tiny oscillations in the SHG detected signal as a function of the incidence angle of the fundamental beam on the samples is discussed and related to the reflectance at the sample-air interfaces. Finally, nonlinear coefficients for three Al_xGa_1–xN/GaN multiple quantum well (MQW) samples (x=0.08 and x=0.15) were determined and compared to the values obtained for GaN crystalline thin films. PACS 42.65.Ky, 78.66.Fd, 78.67.De, 78.67.Pt     

Galvanomagnetic study of the quantum-well valence band of germanium in the Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript>/Ge/Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript> potential well

The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d _w and the hole concentration p _s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p _s = 5 × 10¹⁵ m^?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.     

Preparation and investigation of weakly ferromagnetic Fe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>x</Subscript>BO<Subscript>3</Subscript> single crystals

Single crystals of iron borate FeBO₃, with part of the iron ions substituted for by Ga diamagnetic ions, were grown through spontaneous crystallization from a melt solution. The chemical composition of the crystals thus prepared, Fe_1?xGa_xBO₃ (x=0, 0.15, 0.25, 0.3), was derived from x-ray microprobe analysis data. Mössbauer spectroscopy and magnetometry were employed to determine the hyperfine interaction parameters (effective magnetic fields at the iron nucleus sites, quadrupole splittings, isomer chemical shifts) and Néel temperatures for these crystals and to derive their temperature behavior.     

Photoacoustic method of determination of quantum efficiency of luminescence in Mn<Superscript>2+</Superscript> ions in Zn<Subscript>1−x−y</Subscript>Be<Subscript>x</Subscript>Mn<Subscript>y</Subscript>Se crystals

This paper presents step by step the procedure of determination of the quantum efficiency of luminescence of Mn²⁺ ions in the Zn_1−x−yBe_xMn_ySe crystals. The method is based on the photoacoustic spectroscopy approach. In the paper, the experimental spectra of absorbance, transmission, absorption and photoacoustic spectra of the samples are presented and analyzed from the point of view of the possibility of determination of the quantum efficiency of Mn²⁺ ion luminescence at room temperature. It was determined experimentally that in the investigated crystals the quantum efficiency of luminescence in the Mn²⁺ ions is about 35%, 40%, 32% for the absorption peaks at 430 nm, 470 nm, and 510 nm, respectively, for Zn_0.75Be_0.2Mn_0.05Se crystal.     

Spin-polarized first-principles study of ferromagnetism in zinc-blende In<Subscript>1−x</Subscript>Mn<Subscript>x</Subscript>Sb

First-principles calculations based on the density functional theory are performed to study the structural properties, spin-polarized electronic band structures, density of states and magnetic properties of the zinc blende In_{1− x} Mn _x Sb (x = 0.125, 0.25, 0.50, 0.75, 1.0). The calculated lattice constants of In_{1− x} Mn _x Sb obey the Vegard’s law with a marginal upward bowing. With the increase of Mn concentration in In_{1− x} Mn _x Sb, a transition from the semi-metallic to the half-metallic behavior happens such that the majority-spin valence states crosses the Fermi level and the minority-spin states have a gap at the Fermi level. A large exchange splitting (∼ 4 eV) is observed between Mn 3d states of the majority-spins and the minority-spins. The total magnetic moment of In_{1− x} Mn _x Sb half-metallic ferromagnets per Mn atom basis is 4μ _B. The total magnetic moment per Mn atom indicate that Mn atoms act as acceptors in InSb and contribute to holes in the lattice of InSb. Due to p-d hybridization, the free space charge of Mn reduces that results a loss in its magnetic moment. The loss in the magnetic moment of the Mn atoms is converted into a small local magnetic moments on the In and Sb sites.     

Optical and magneto-optical properties of Fe<Subscript>4−x</Subscript>Co<Subscript>x</Subscript> (x = 1–3)

We report a systematic study of the electronic, optical, and magneto-optical properties of the Fe_4−xCo_x (x = 1–3) compounds using the full-potential linearized augmented plane waves (FPLAPW) method within the local spin density approximation (LSDA). Pure Fe (x = 0) and Co (x = 4) have also been studied, the latter in hcp as well as bcc structure, to offer a better comparison. A good agreement is obtained between calculated optical conductivity spectra and experimental data. We note that the magneto-optical properties of these compounds are found to be more akin to those of bcc Co (which has MOKE very similar to that of bcc Fe) than to those of hcp Co. This shows strong impact of the environment on the MOKE of these compounds. With respect to the elemental values, the magnetic moments at Fe sites are found to be larger in general, while those at Co sites are almost the same. However, interestingly, despite their larger magnetic moment, the Kerr rotation remains comparable to that of bcc Fe for most of the energy range. The origin of Kerr spectra has been explained in terms of optical transitions.     

Surface and volume phase states of Fe<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>x</Subscript>BO<Subscript>3</Subscript> crystals in the vicinity of the Néel point

The behavior of the magnetic system of a surface layer of macroscopic Fe_1?xGa_xBO₃ crystal (x=0, 0.3) in the vicinity of the Néel temperature T_N was studied. The studies were made by a method involving simultaneous gamma, x-ray, and electron Mössbauer spectroscopy that made it possible to obtain information simultaneously from surface layers and from the bulk of a macroscopic crystal. It was found that the temperature T_N(L) at which a thin layer at a depth L from the surface switches to a disordered state is lower than T_N for the bulk and is lower the closer this layer is to the surface. In the vicinity of T_N, a nonuniform state is observed in which the bulk of the crystal is magnetically ordered and the surface layer is disordered. The transition temperature T_N(L) decreases from T_N to its surface value within a surface layer of a “critical” thickness.     

Raman scattering and electrical studies of the phase stability in the Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te

Raman scattering is performed to access phase stability in the boron-implanted Hg_0.7Cd_0.3Te with fluences ranging from 1 × 10¹² to 1 × 10¹⁵ cm^?2. Threshold fluence for the formation of an amorphous phase is invoked here using Thomas–Fermi statistical model. Asymmetric broadening and red shift of the Raman active HgTe-like LO phonon mode are observed with varying fluencies. Electrical properties such as sheet carrier concentration and mobility are also changed with the fluence and reach their saturated values beyond threshold fluence of 5 × 10¹³ cm^?2. Threshold fluence for the formation of amorphous phase is also validated by the Raman measurements and electrical transport properties in the implanted layers. The excess free energy of 6.8 kJ/mole is found corresponding to the threshold fluence for phase transition.     

Synthesis and characterization of LiNi<Subscript>y</Subscript>Co<Subscript>1−y</Subscript>PO<Subscript>4</Subscript> (y=0–1) cathode materials for lithium secondary batteries

In this work series of LiNi_yCo_1−yPO₄ (y=0, 0.2, 0.4, 0.6, 0.8 and 1) phospho olivines were synthesized by solution co-precipitation technique and characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) and impedance spectroscopic analysis. The XRD patterns of LiNi_yCo_1−yPO₄ (y=0.2, 0.4, 0.6 and 0.8) revealed that they are essentially single phase and have an Olivine-type XRD patterns similar to those of their parent compounds LiCoPO₄ and LiNiPO₄. An increase in wave number for most of the dominant infrared bands in PO₄ vibrational region for the substitution of Co by Ni in LiCoPO₄ indicated the strengthening of both the P-O and Li/Ni-O bonds. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.     

Structural and magnetic phases of Bi<Subscript>1−x</Subscript>A<Subscript>x</Subscript>FeO<Subscript>3−</Subscript><Subscript>δ</Subscript> (A = Sr,Pb) perovskites

The Bi_1−xA_xFeO_{3− δ} (A = Sr, Pb) systems have been studied using the X-ray, neutron powder diffraction and magnetization measurements in a magnetic field up to 14 T. It was found that around x ∼ 0.06 the crystal symmetry changes from a rhombohedral (space group R3c) to pseudo-tetragonal. In the composition range 0.07 ≤ x ≤ 0.14 the phases with different symmetry of the unit cell coexist independent of synthesis conditions. The neutron powder diffraction shows that the iron ions have average oxidation state close to 3+. The magnetic structure for Bi_0.5Sr_0.5FeO_{3− δ} is found to be G-type antiferromagnetic with magnetic moment of about 3.8 μ_B/Fe³⁺. The weak ferromagnetic state due to magnetoelectric interactions was revealed in the lightly doped rhombohedrally distorted compositions. No evidence for a spontaneous magnetization was observed for the pseudo-tetragonal phases. These compositions show irreversible nonlinear magnetization vs. field behavior apparently due to small local deviations from the collinearity of the magnetic moments.     

Optical activity of γ<Subscript>1</Subscript>-(Ga<Subscript>x</Subscript>In<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>)<Subscript>2</Subscript>Se<Subscript>3</Subscript> crystals

The optical activity of uniaxial γ₁-(Ga_xIn_1?x )₂Se₃ crystals (x=0.1, 0.2, 0.3, 0.4) is studied at T=295 and 77 K in the spectral range 0.5–0.8 πm. It is found that the cationic substitution In → Ga leads to a nonlinear increase in the specific rotation of the plane of polarization ρ and the component g ₃₃ of the gyration tensor. It is shown that the gyrotropy of the crystals studied is determined by high-energy transitions whose energy exceeds the energy of the edge transitions and that the gyrotropy observed has a molecular origin.     

Dynamic magnetic susceptibility of compounds in Gd<Subscript>5</Subscript>Si<Subscript>2−x</Subscript>Ge<Subscript>2−x</Subscript>Sn<Subscript>2x</Subscript> (2x = 0 − 0.1) system

The dynamic magnetic susceptibility (χ_ac) of magnetically ordered Gd₅Si_2?xGe_2?xSn_2x compounds with the partial substitution for silicon and germanium atoms by isovalent tin atoms (2x = 0 ? 0.1) has been investigated experimentally. From the temperature dependence of χ_ac the Curie temperatures of these alloys are determined. It is established that tin-doped alloys have higher Curie temperatures as compared to Gd₅Si₂Ge₂ (ΔT _C ≈ 15 K).     

Photoluminescence of TlCu<Subscript>1−x</Subscript>GaSe<Subscript>2</Subscript> single crystals

The results of the study of photoluminescence and its excitation spectra in Tl _x Cu_1−x GaSe₂ single crystals are presented. The crystals under study are layered and characterized by anisotropic optical properties. In this respect, it is important to investigate optical properties of the crystals under study.     

Magnetocaloric properties of manganites La<Subscript>1−x</Subscript>(Ag,K)<Subscript>x</Subscript>MnO<Subscript>3</Subscript>

The temperature and magnetic-field dependences of the magnetocaloric effect in manganites La_1−x Ag _x MnO₃ (x = 0.1; 0.15; 0.2) and La_1−x K _x MnO₃ (x = 0.1; 0.11; 0.13; 0.15; 0.175) were studied by a direct method. Large changes in the sample temperature were detected as a magnetic field changed by ΔH = 10 kOe. Temperatures of the magnetocaloric effect maxima are near room temperatures. Field dependences of the magnetocaloric effect show no signs of saturation in fields to 30 kOe.