Galvanomagnetic study of the quantum-well valence band of germanium in the Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript>/Ge/Ge<Subscript>1−x</Subscript>Si<Subscript>x</Subscript> potential well

The structure of the quantum-well valence band in a Ge(111) two-dimensional layer is calculated by the self-consistent method. It is shown that the effective mass characterizing the motion of holes along the germanium layer is almost one order of magnitude smaller than the mass for the motion of heavy holes along the [111] direction in a bulk material (this mass is responsible for the formation of quantum-well levels). This creates a unique situation in which a large number of subbands appear to be populated at moderate values of the layer thickness d _w and the hole concentration p _s . The depopulation of two or more upper subbands in a 38-nm-thick germanium layer at a hole concentration p _s = 5 × 10¹⁵ m^?2 is revealed from the results of measuring the magnetoresistance in a strong magnetic field aligned parallel to the germanium layers. The destruction of the quantum Hall state at a filling factor ν = 1 indicates that the two lower subbands merge together in a self-formed potential profile of the double quantum well. It is demonstrated that, in a quasi-two-dimensional hole gas, the latter effect should be sensitive to the layer strain.     

Computation of the electronic structure and direct-gap absorption spectra in Ge-rich Si<Subscript>1−x</Subscript> Ge<Subscript>x</Subscript>/Ge/Si<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript> type-I quantum wells

This paper presents the results of conduction band discontinuities calculation for strained/relaxed Si_1?x Ge _x /Si_1?y Ge _y heterointerfaces in Γ _15C , Γ _2′C and L upper bands minima, as well as the room-temperature strained (vs. relaxed) band gaps deduced from the classical model-solid theory. Based upon the obtained data, we propose a type-I W-like Si_1?y Ge _y /Si_1?x Ge _x /Ge/Si_1?x Ge _x /Si_1?y Ge _y quantum wells heterostructure optimized in terms of compositions and thicknesses. Electronic states and wave functions are found by solving Schrödinger equation without and under applied bias voltage. An accurate investigation of the optical properties of this heterostructure is done by calculating the energies of the interband transitions and their oscillator strengths. Moreover, a detailed computation of the bias-voltage evolution of the absorption spectra is presented. These calculations prove the existence of type-I band alignment at Γ _2′C point in compressively strained Ge quantum wells grown on relaxed Ge-rich Si_1?y Ge _y buffers. The strong absorption coefficient (> 8 × 10³ cm^-1) and the large Stark effect (0.1 eV @ 2 V) of the Γ _2′C transitions thresholds open up perspectives for application of these heterostructures for near-infrared optical modulators.     

Field-induced valence transition in EuPtP<Subscript>1−x</Subscript>As<Subscript>x</Subscript>

The ternary compound EuPtP exhibits two valence transitions at T ₁ = 235 K and T ₂ = 190 K. In order to examine a field-induced valence transition of Eu, we synthesized EuPtP_1−x As _x compounds with 0.05 ≤ x ≤ 0.5 and studied the magnetic and valence behavior. The substitution of As for P increases the lattice volume linearly and decreases both valence transition temperatures, T ₁ and T ₂, in contrast to the behavior under external pressures. The magnetization process in a pulsed magnetic field revealed that EuPtP_0.5As_0.5 exhibits an onset of metamagnetic transition above 50 T with a large hysteresis, which evidences a first-order field-induced valence transition. The analysis of the magnetization curves of x = 0.5 at various temperatures has demonstrated that the field-induced transition is essentially the same as the transition induced by temperature at T ₁.     

Nernst effect of stripe ordering La<Subscript>1.8−x</Subscript>Eu<Subscript>0.2</Subscript>Sr<Subscript>x</Subscript>CuO<Subscript>4</Subscript>

We investigate the transport properties of La_1.8−xEu_0.2Sr_xCuO₄ (x = 0.04, 0.08, 0.125, 0.15, 0.2) with a special focus on the Nernst effect in the normal state. Various anomalous features are present in the data. For x = 0.125 and 0.15 a kink-like anomaly is present in the vicinity of the onset of charge stripe order in the LTT phase, suggestive of enhanced positive quasiparticle Nernst response in the stripe ordered phase. At higher temperature, all doping levels except x = 0.2 exhibit a further kink anomaly in the LTO phase which cannot unambiguously be related to stripe order. Moreover, a direct comparison between the Nernst coefficients of stripe ordering La_1.8−xEu_0.2Sr_xCuO₄ and superconducting La_2−xSr_xCuO₄ at the doping levels x = 0.125 and x = 0.15 reveals only weak differences. Our findings make high demands on any scenario interpreting the Nernst response in hole-doped cuprates.     

Rotatable anisotropy of epitaxial Fe<Subscript>1−x</Subscript>Ga<Subscript>x</Subscript> thin films

We show by a combined magnetic force microscopy and synchrotron radiation spectroscopy study that stripe-like patterned magnetic domains are present in Fe_1?x Ga _x thin films. These stripes, whose origin is attributed to an out-of-plane magnetic component, can be rotated by an external magnetic field.     

Microwave characterization of Pb<Subscript>1−x</Subscript>Ca<Subscript>x</Subscript>Fe<Subscript>0.5</Subscript>Nb<Subscript>0.5</Subscript>O<Subscript>3</Subscript> multiferroics at X-band

The microwave characteristics of Pb_1?x Ca _x Fe_0.5Nb_0.5O₃ multiferroics (x = 0.0, 0.4, 0.45, 0.5, 0.55, 0.6), have been investigated as a function of frequency and substitution. The results depict ?13.99 dB reflection loss at 11.65 GHz in composition x = 0.6. Microwave absorption is enhanced with substitution of Ca²⁺ ions and undoped composition 0.0 behaves as electromagnetic shield. The model governing microwave absorption is discussed and different compositions for electromagnetic applications have been suggested.     

Spin-polarized first-principles study of ferromagnetism in zinc-blende In<Subscript>1−x</Subscript>Mn<Subscript>x</Subscript>Sb

First-principles calculations based on the density functional theory are performed to study the structural properties, spin-polarized electronic band structures, density of states and magnetic properties of the zinc blende In_{1− x} Mn _x Sb (x = 0.125, 0.25, 0.50, 0.75, 1.0). The calculated lattice constants of In_{1− x} Mn _x Sb obey the Vegard’s law with a marginal upward bowing. With the increase of Mn concentration in In_{1− x} Mn _x Sb, a transition from the semi-metallic to the half-metallic behavior happens such that the majority-spin valence states crosses the Fermi level and the minority-spin states have a gap at the Fermi level. A large exchange splitting (∼ 4 eV) is observed between Mn 3d states of the majority-spins and the minority-spins. The total magnetic moment of In_{1− x} Mn _x Sb half-metallic ferromagnets per Mn atom basis is 4μ _B. The total magnetic moment per Mn atom indicate that Mn atoms act as acceptors in InSb and contribute to holes in the lattice of InSb. Due to p-d hybridization, the free space charge of Mn reduces that results a loss in its magnetic moment. The loss in the magnetic moment of the Mn atoms is converted into a small local magnetic moments on the In and Sb sites.     

Magnetocaloric properties of manganites La<Subscript>1−x</Subscript>(Ag,K)<Subscript>x</Subscript>MnO<Subscript>3</Subscript>

The temperature and magnetic-field dependences of the magnetocaloric effect in manganites La_1−x Ag _x MnO₃ (x = 0.1; 0.15; 0.2) and La_1−x K _x MnO₃ (x = 0.1; 0.11; 0.13; 0.15; 0.175) were studied by a direct method. Large changes in the sample temperature were detected as a magnetic field changed by ΔH = 10 kOe. Temperatures of the magnetocaloric effect maxima are near room temperatures. Field dependences of the magnetocaloric effect show no signs of saturation in fields to 30 kOe.     

Correlation between raman spectra and structural properties of Zn<Subscript>2 − 2<Emphasis Type="Italic">x</Emphasis></Subscript>Cu<Subscript>x</Subscript>In<Subscript>x</Subscript>Se<Subscript>2</Subscript> films

The Raman spectra of Zn_{2 ? 2x} Cu_xIn_xSe₂ (ZCIS) semiconductor films designed for use as optically active layers in thin-film solar cells have been investigated. The Raman spectra of ZCIS films are characterized by the presence of the dominant mode A ₁, which is observed in A^IB^IIIC ₂ ^VI compounds with chalcopyrite structure. The spectra of CuInSe₂ films (x = 1) obtained at low temperatures (T ≤ 400°C) contain and additional mode at 258 cm^?1, which is due to the presence of the impurity Cu_xSe phase. All modes observed in the spectra of ZCIS films with a Zn concentration ≤20 at % obtained under optimal conditions (520–540°C) correspond to the symmetry of vibrations in the chalcopyrite structure. The broadening and blue shift of the A ₁ mode occurring with an increase in the Zn concentration are indicative of degradation of the chalcopyrite crystal structure and the chalcopyrite → sphalerite phase transition at Zn concentrations exceeding 20 at %.     

Theoretical study on the electronic and magnetic properties of double perovskite La<Subscript>2−x</Subscript>Sr<Subscript>x</Subscript>MnCoO<Subscript>6</Subscript> (x = 0,1,2)

In this paper, the electronic and magnetic properties of double perovskite La_2−x Sr _x MnCoO₆ (x = 0,1,2) have been studied using the local-spin-density approximation + U method. For the three compositions investigated, the low symmetry P2₁/n structure yields consistently lower energy than that of the high symmetry \hbox{Fm[`3]mFm\bar{3}m} Fm3̅m structure. The strong electronic correlation and the orbital polarization of Co-d electrons play crucial roles. In agreement with experiments, we find that La<sub>2</sub>MnCoO<sub>6</sub> is a ferromagnetic insulator with both Mn and Co ions in their high-spin states. The tilting of oxygen octahedrons is most significant in this case and is responsible for its insulating behavior; for LaSrMnCoO<sub>6</sub>, the ground state remains a ferromagnetic insulator with Mn and Co ions in their high-spin states. The optimized P2<sub>1</sub>/n and \hbox{Fm[`3]mFm\bar{3}m}Fm3̅m crystal structures are nearly the same, and the P2₁/n structure is stabilized by the spontaneous layer-wise antiferro-orbital ordering of Co-d electrons. We also predict that Sr₂MnCoO₆ is a ferromagnetic metal, and its electronic structure can be viewed as a rigid band shifting from that of LaSrMnCoO₆. Due to the strong covalency between transition metal and oxygen ions, the valences of Mn and Co ions differ considerably from those derived from purely ionic model. Also, doping induced holes mainly go to oxygen sites though the density of states near the Fermi energy has strong mixed character. This feature, together with the orbital ordering phenomenon, should be observable via the X-ray near-edge absorption spectroscopy and the polarized X-ray diffraction spectra.     

Synthesis of compositionally controllable Cu<Subscript>2</Subscript>(Sn<Subscript>1−x</Subscript>Ge<Subscript>x</Subscript>)S<Subscript>3</Subscript> nanocrystals with tunable band gaps

In this work, we show that compositionally controlled Cu₂(Sn_1–xGe_x)S₃ nanocrystals can be successfully synthesized by the hot-injection method through careful tuning the Ge/(Sn+Ge) precursor ratio. The band gaps of the resultant nanocrystals are demonstrated to be linearly tuned from 1.45 to 2.33 eV by adjusting the composition parameter x of the Ge/(Sn+Ge) ratio from 0.0 to 1.0. The crystalline structures of the resultant NCs have been studied by the X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), select area electron diffraction (SAED), and Raman spectroscopy. A ligand exchange procedure is further performed to replace the native ligands on the surface of the NCs with sulfur ions. The photoresponsive behavior indicates the potential use of as-prepared Cu₂(Sn_1–xGe_x)S₃ nanocrystals in solar energy conversion systems. The synthesis of compositionally controlled Cu₂(Sn_1–xGe_x)S₃ nanocrystals reported herein provides a way for probing the effect of Ge inclusion in the Cu-Sn-S system thin films.     

Infrared photodetectors based on the system “Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te photodiode — direct-injection readout circuit”

A mathematical model for multi-element IR FPAs based on Hg_1−xCd_xTe photodiodes with direct-injection readout circuits is developed. This model was used to identify the main factors that limit the performance characteristics of thermography systems based on such FPAs.     

Heat capacity of the Pb<Subscript>5</Subscript>(Ge<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Si<Subscript>x</Subscript>)<Subscript>3</Subscript>O<Subscript>11</Subscript> ferroelectric system

The temperature dependences of the molar heat capacity at constant pressure, C_p, of Pb₅(Ge_1?xSi_x)₃O₁₁ crystals with x=0, 0.39, and 0.45 in the range 5–300 K, as well as of their permittivity, dielectric losses, and the pyroelectric effect, have been measured. Experimental data on the temperature behavior of the heat capacity are presented in the form of a sum of two Debye and one Einstein terms, C_p(T)=0.405C_D1(Θ_D1=160 K, T)+0.53C_D2(Θ_D2=750 K, T)+0.046C_E(Θ_E=47 K, T). Besides a peak in the region of the ferroelectric Curie point T_c=450 K for crystals with x=0, the temperature dependences of the heat capacity did not reveal any other pronounced anomalies.     

Dynamic magnetic susceptibility of compounds in Gd<Subscript>5</Subscript>Si<Subscript>2−x</Subscript>Ge<Subscript>2−x</Subscript>Sn<Subscript>2x</Subscript> (2x = 0 − 0.1) system

The dynamic magnetic susceptibility (χ_ac) of magnetically ordered Gd₅Si_2?xGe_2?xSn_2x compounds with the partial substitution for silicon and germanium atoms by isovalent tin atoms (2x = 0 ? 0.1) has been investigated experimentally. From the temperature dependence of χ_ac the Curie temperatures of these alloys are determined. It is established that tin-doped alloys have higher Curie temperatures as compared to Gd₅Si₂Ge₂ (ΔT _C ≈ 15 K).     

Fractal magnetic microstructure in the (Co<Subscript>41</Subscript>Fe<Subscript>39</Subscript>B<Subscript>20</Subscript>)<Subscript>x</Subscript>(SiO<Subscript>2</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript> nanocomposite films

Magnetostructural methods are applied to determine the exchange bond percolation limit in (Co₄₁Fe₃₉B₂₀)_x(SiO₂)_1?x nanocomposites (x _c = 0.30 ± 0.02), which separates the phase plane along the metal concentration axis into a superparamagnetic region and a ferromagnetic region. It is shown that, with respect to the singularities of the magnetization up to the magnetization saturation curves, the ferromagnetic region is further subdivided into three regions differing in the character of the spatial propagation of the magnetization ripples or in the magnetic correlation function characteristics. The fractal dimension of the nanocomposite magnetic microstructure near the percolation threshold is determined.     

Quantum corrections to the conductivity of a natural Nd<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript> Ce<Subscript>x</Subscript>CuO<Subscript>4</Subscript> superlattice

Temperature and magnetic field dependences of the resistivity and Hall coefficient in layered single-crystal Nd_2?xCe_xCuO₄ (x = 0.12) films are experimentally investigated and analyzed. It is shown that this material clearly exhibits quantum effects characteristic of 2D semiconductor structures: negative magnetoresistance caused by suppression of the interference quantum correction by a magnetic field, a near-logarithmic temperature dependence of the conductivity, and a temperature dependence of the Hall coefficient related to e-e interaction. It is shown that, when analyzing experimental data, it is necessary to take interlayer transitions into account. Such an approach provides quantitative agreement between experiment and the standard theory of quantum corrections.     

Multivariate pressure effects on an electron hopping process in ferroelectric KTa<Subscript>1−x</Subscript>Nb<Subscript>x</Subscript>O<Subscript>3</Subscript>

The effect induced by the presence of a polaron related relaxation process on the dielectric properties of a ferroelectric KTa_1?x Nb _x O₃ (KTN) crystal was investigated (10^-2?10⁶ Hz, at 300?375 K) using broadband dielectric spectroscopy. Characterization of the process using just the standard frequency domain dielectric parameters can nonetheless provide penetrating insight into its nature and origins. The three parameters, namely: relaxation time (τ), Cole-Cole loss broadening (α), and dielectric strength (Δ?) provide each one in its own way, much useful and often overlooked information. The Activation Energy along with the Meyer-Neldel dependance, both extracted from τ serve to illuminate the dynamic properties. At the same time, α and especially the combined α(lnτ) relationship, expose the fractal structure of the underlying landscape. Finally, the static parameter Δ?, enables quantification of the dipolar correlations. Hydrostatic pressure (up to 7.5 kbar) was applied to gently perturb the system and observe the outcome on all of the various parameters. This additional degree of freedom allows for a much more comprehensive exploration of the phase space behavior of the system.     

Hall effect in the Fe<Subscript>x</Subscript>Mn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>S magnetic semiconductors

The electrical properties and the Hall effect in the Fe_xMn_1?xS magnetic semiconductors (0<x≤0.5) have been experimentally studied in the range 77–300 K in magnetic fields of up to 15 kOe. The cation-substituted sulfides with 0.25≤x≤0.3 possessing colossal magnetoresistance (CMR) were established to be narrow-gap semiconductors with carrier concentrations n ～ 10¹¹–10¹⁵ cm^?3 and high carrier mobilities μ ～ 10²–10⁴ cm² V^?1 s^?1. It is believed that the CMR effect in these sulfides can be explained in terms of the model of magnetic and electron phase separation, which is analogous to the percolation theory in the case of heavily doped semiconductors.     

Effect of substrates on the morphology of Ba<Subscript>x</Subscript>Sr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>TiO<Subscript>3</Subscript> nanometer-scale films

The initial stages in the growth of Ba_xSr_1?xTiO₃ films on various dielectric substrates were studied using the middle-energy ion scattering spectroscopy, and the results obtained were used to analyze microdefects in the film. The character of film growth was found to depend on the shape, size, and electrostatic state of crystallographic unit cells of the substrate surface. The growth was epitaxial on an SrTiO₃ substrate. The film prepared on an LaAlO₃ substrate consists of slightly disordered crystallites. Films on MgO substrates demonstrated island-type growth up to a thickness of 20 nm, with foreign phases observed to form; as the film thickness increased, the growth acquired an epitaxial pattern. The film grown on the \(\alpha - Al_2 O_3 (1\bar 102)\) surface was polycrystalline and contained textured blocks.     

AC and DC properties of M-type SrCo<Subscript>x</Subscript>Ti<Subscript>x</Subscript>Fe<Subscript>(12−2x)</Subscript>O<Subscript>19</Subscript> hexagonal ferrite

Microwave characterization of SrCo _x Ti _x Fe_(12?2x)O₁₉ (x = 0.0, 0.2, 0.3, 0.5, 0.6, 0.7, 1.0) ferrites has been studied as a function of frequency, substitution and thickness, and static electrical current density-electric field characteristics have been investigated as a function of substitution. Microwave characteristics have been measured using power meter in the rectangular slotted waveguide and current density is measured using electrometer. The microwave absorption is evaluated using the standard available model. The results depict ?11.57 dB reflection loss at 10.38 GHz in composition x = 0.6. The electrical current density decreases at lower substitution and increases at higher substitution. The substitution of Co²⁺ and Ti⁴⁺ ions causes enhancement of electromagnetic and static electrical properties.