Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten

The reaction products in the SF₆-N₂ mixture rf plasma during reactive ion etching of Si and W have been measured by a mass spectrometric method. Two kinds of cathode materials were used in this work; they were stainless steel for the Si etching, and SiO₂ for the W etching. The main products detected in the etching experiments of Si and W included SF₄, SF₂, SO₂, SOF₂, SOF₄, SO₂F₂, NSF, NF₃, N₂F₄, N_xS_y, NO₂, and SiF₄. In the W etching with the SiO₂ cathode, additional S₂F₂, N₂O, and WF₆ molecules were also obtained. The formation reactions about the novel NSF compound and the sulfur oxyfuorides were discussed.     

A model for the etching of Si in CF4 plasmas: Comparison with experimental measurements

A model has been developed to describe the chemistry which occurs in CF₄ plasmas and the etching of Si both in the plasma and downstream. One very important feature of this model is that for discharge residence times which vary by more than an order of magnitude, the amount of CF₄ consumed is low and relatively constant. This is because the gas-phase combination reactions between F and both CF₃ and CF₂ lead to the rapid reforming of CF₄. The model predicts that CF₂ is a major species in the gas phase and that the [F] detected as a sample point downstream is a very sensitive function of [CF₂]/[F] in the discharge. Even though the calculations show that [F] in the discharge varies only slightly over the wide range of experimental conditions considered, large variations in [F] at the sample point occur because the [CF₂]/[F] ratio in the discharge changes. The concentrations of C₂F₆ and SiF₄ are predicted to within a factor of 2 over a very wide range of experimental conditions. This confirms the importance of gas-phase free radical reactions in the etching of Si.     

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Polycrystalline silicon wafers were etched in dc discharges of SF₆. SF_x species were extracted from the discharges and measured with a mass spectrometer. A systematic procedure was used to measure the SF _x ⁺ signals such that they are indicators of events in the discharge close to the sample undergoing etching. The picture that emerges is remarkably simple and shows the relative stability of several SF_x species including SF₆, SF₄, SF₂, and SF which are shown to be extracted from the discharge both in the presence and absence of the silicon sample. When silicon is being etched on the cathode of the discharge cell, the only significant additional products are SiF₄ and S₂F₂. A comparison of blank and sample data for opposite substrate polarities shows that there is only a small cation-assisted etching effect and suggests that ions do not play an important role in the etching of silicon by SF₆ discharges.     

Chemical analysis of acidic silicon etch solutions: I. Titrimetric determination of HNO3, HF, and H2SiF6

The chemical etching of silicon using HF-HNO₃ mixtures is a widely used process in the processing of silicon wafers for microelectronic or photovoltaic applications. The control of the etch bath composition is the necessary condition for an effective bath utilization, for the replenishment of the consumed acids, and to maintain a certain etch rate. The present paper describes two methods for the total analysis of the individual etch bath constituents HF, HNO₃, and H₂SiF₆. Both methods start with an aqueous acid-base titration determining the total acid concentration and the concentration of H₂SiF₆. The first method is an acid-base titration using a 0.1 mol L⁻¹ methanolic solution of cyclohexylamine (CHA) as non-aqueous titrant to determine the content of nitric acid. Then, the amount of hydrofluoric acid is calculated from the difference between the total acid and nitric acid content. The second method is based on the determination of the total fluoride concentration using a fluoride ion-selective electrode (F-ISE). The content of hydrofluoric acid is obtained from the difference between the total fluoride content and the amount of fluoride bound as H₂SiF₆. The amount of nitric acid results finally calculated as difference to the total acid content.     

Chemical analysis of acidic silicon etch solutions: II. Determination of HNO3, HF, and H2SiF6 by ion chromatography

The processing of silicon in microelectronics and photovoltaics involves the isotropic chemical etching using HF-HNO₃ mixtures to clean the surface from contaminations, to remove the saw damage, as well as to polish or to texture the wafer surface. Key element of an effective etch process control is the knowledge of the actual etch bath composition in order to maintain a certain etch rate by replenishment of the consumed acids. The present paper describes a methods for the total analysis of the etch bath constituents HF, HNO₃, and H₂SiF₆ by ion chromatography. First step is the measurement of the total fluoride and nitrate content in the analyte. In a second step, H₂SiF₆ is precipitated as K₂SiF₆. After careful filtration of the precipitate, the fluoride concentration in the filtrate is measured and the content of free HF is calculated therefrom. The K₂SiF₆ is dissolved again and the fluoride content measured and recalculated as H₂SiF₆. The results obtained with the presented method are discussed with respect to the results from two other, previously published methods, based on a titration using methanolic cyclohexylamine solution as titrant and based on a method using a fluoride ion selective electrode (F-ISE). An evaluation with respect to the needs for an industrial application is given.     

Surface modification of carbon anodes for secondary lithium battery by fluorination

Recent results on the surface modification of petroleum cokes and their electrochemical properties as anodes of secondary lithium batteries are summarized. The surface of petroleum coke and those heat-treated at 1860-2800 °C were fluorinated by elemental fluorine (F₂), chlorine trifluoride (ClF₃) and nitrogen trifluoride (NF₃). No surface fluorine was found except only one sample when ClF₃ and NF₃ were used as fluorinating agents while surface region of petroleum coke was fluorinated when F₂ was used. Transmission electron microscopic (TEM) observation revealed that closed edge of graphitized petroleum coke was destroyed and opened by surface fluorination. Raman spectra showed that surface fluorination increased the surface disorder of petroleum cokes. Main effect of surface fluorination with F₂ is the increase in the first coulombic efficiencies of petroleum cokes graphitized at 2300-2800 °C by 12.1-18.2% at 60 mA/g and by 13.3-25.8% at 150 mA/g in 1 mol/dm³ LiClO₄-ethylene carbonate (EC)/diethyl carbonate (DEC) (1:1, v/v). On the other hand, main effect of the fluorination with ClF₃ and NF₃ is the increase in the first discharge capacities of graphitized petroleum cokes by ∼63 mAh/g (∼29.5%) at 150 mA/g in 1 mol/dm³ LiClO₄-EC/DEC.     

Photodifluoramination of a series of hexafluoroacetone imines

Gas phase irradiation of N₂F₄ (NF₂) in the presence of hexafluoroacetone imine (I), N-chlorohexafluoroacetone imine (II), or N-bromohexafluoroacetone imine (III) resulted in the formation of products that correspond to either perhalogenation of the unsaturation or conversion of the substrate to a saturated halocarbon. The mechanism suggested involves the formation of an imino radical that reacts with N₂F₄(NF₂) to produce N,N-difluorohydrazone, (CF₃)₂CNNF₂. A bimolecular homolytic displacement (S_H2′) by Cl and F on the hydrazone forms an intermediate diazene which leads to the observed products. N-fluorohexafluoroacetone imine is inert to F atoms and NF₂ under the reaction conditions.     

Negative ion formation in compounds relevant to SF6 decomposition in electrical discharges

Dissociative and nondissociative electron attachment in the electron impact energy range 0–14 eV are reported for SOF₂ SOF₄, SO₂F₂, SF₄, SO₂, and SiF₄ compounds which can be formed by electrical discharges in SF₆. The electron energy dependences of the mass-identified negative ions were determined in a time-of-flight mass spectrometer. The ions studied include F^– and SOF ₂ ^–* from SOF₂; SOF ₃ ^– and F^– from SOF₄; SO₂F ₂ ^–* , SO₂F^–, F ₂ ^– , and F^– from SO₂F₂; SF ₄ ^–* and F^– from SF₄; O^–, SO^–, and S^– from SO₂; and SiF ₃ ^– and F^– from SiF₄. Thermochemical data have been determined from the threshold energies of some of the fragment negative ions. Lifetimes of the anions SOF ₂ ^–* , SO₂F ₂ ^–* , and SF ₄ ^–* are also reported.     

Formation Mechanism of NF4+ Salts and Extraordinary Enhancement of the Oxidizing Power of Fluorine by Strong Lewis Acids

Although the existence of the NF₄⁺ cation has been known for 51 years, and its formation mechanism from NF₃ , F₂ , and a strong Lewis acid in the presence of an activation energy source had been studied extensively, the mechanism had not been established. Experimental evidence had shown that the first step involves the generation of F atoms from F₂ , and also that the NF₃⁺ cation is a key intermediate. However, it was not possible to establish whether the second step involved the reaction of a F atom with either NF₃ or the Lewis acid (LA). To distinguish between these two alternatives, a computational study of the NF₄ , SbF₆ , AsF₆ , and BF₄ radicals was carried out. Whereas the heats of reaction are small and similar for the NF₄ and LAF radicals, at the reaction temperatures, only the LAF radicals possess sufficient thermal stability to be viable species. Most importantly, the ability of the LAF radicals to oxidize NF₃ to NF₃⁺ demonstrates that they are extraordinary oxidizers. This extraordinary enhancement of the oxidizing power of fluorine with strong Lewis acids had previously not been fully recognized.     

Gas‐phase reactions of SiHn+ (n = 1,2) with NF3: A computational investigation on the detailed mechanistic aspects

The mechanism of the gas‐phase reactions of SiH_n⁺ (n = 1,2) with NF₃ were investigated by ab initio calculations at the MP2 and CAS‐MCSCF level of theory. In the reaction of SiH⁺, the kinetically relevant intermediates are the two isomeric forms of fluorine‐coordinated intermediate HSi‐F‐NF₂⁺. These species arise from the exoergic attack of SiH⁺ to one of the F atoms of NF₃ and undergo two competitive processes, namely an isomerization and subsequent dissociation into SiF⁺ + HNF₂, and a singlet‐triplet crossing so to form the spin‐forbidden products HSiF⁺ + NF₂. The reaction of SiH₂⁺ with NF₃ involves instead the concomitant formation of the nitrogen‐coordinated complex H₂Si‐NF₃⁺ and of the fluorine‐coordinated complex H₂Si‐F‐NF₂⁺. The latter isomer directly dissociates into NF₂⁺ + H₂SiF, whereas the former species preferably undergoes the passage through a conical intersection point so to form a H₂SiF‐NF₂⁺ isomer, which eventually dissociates into H₂SiF⁺ and NF₂. © 2012 Wiley Periodicals, Inc.     

Comparative computational investigation of N and F substituted polyoxoanionic compounds: The case of Li2FeSiO4 electrode material

First principles calculations are used to anticipate the electrochemistry of polyoxoanionic materials consisting of XO_{4 − y}A_y (A = F, N) groups. As an illustrative case, this work focuses on the effect of either N or F for O substitution upon the electrochemical properties of Li₂FeSiO₄. Within the Pmn2₁–Li₂FeSiO₄ structure, virtual models of Li₂Fe₂^2.5+SiO_3.5N_0.5 and Li_1.5Fe²⁺SiO_3.5F_0.5 have been analyzed. We predict that the lithium deinsertion voltage associated to the Fe^3+/Fe⁴⁺ redox couple is decreased by both substituents. The high theoretical specific capacity of Li₂FeSiO₄ (330 mAh/g) could be retained in N-substituted silicates thanks to the oxidation of N³⁻ anions, whilst Li_1.5Fe²⁺SiO_3.5F_0.5 has a lower specific capacity inherent to the F substitution. Substitution of N/F for O will respectively improve/worsen the electrode characteristics of Li₂FeSiO₄.     

Production of electronically excited NF by the reaction of fluorine atoms with HN3

Electronically excited NF in both the a¹Δ and b ¹Σ⁺ states hasbeen observed from the reaction of fluorine atoms with HN₃. The results suggest that fluorine atoms first abstract the hydrogen atom from HN₃, then react with the remaining N₃ to form NF^≠(a¹Δ). NF^*(b¹Σ⁺) is produced by a subsequent energy pooling reaction between NF^≠(a¹Δ) and vibrationally excited HF. The rate of the F + N₃ reaction is estimated to be ≈ 10¹² and ³ mole^?1 s^?1.     

Quantenchemische Untersuchung der Elementarprozesse beim Plasmaätzen im System Fluor/Silizium

Summary Using the cluster model of the silicon (111) surface we derive by means of EHT calculations a mechanism of reactive plasma etching in the system F/Si including diffusion processes. Species SiF₂ are found to be the primary etching products at the surface. SiF₄ is formed with high probability in the gas phase.

     

Gas‐phase reactions of XH3+ (X = C,Si, Ge) with NF3: a comparative investigation on the detailed mechanistic aspects

The gas‐phase reaction of CH₃⁺ with NF₃ was investigated by ion trap mass spectrometry (ITMS). The observed products include NF₂⁺ and CH₂F⁺. Under the same experimental conditions, SiH₃⁺ reacts with NF₃ and forms up to six ionic products, namely (in order of decreasing efficiency) NF₂⁺, SiH₂F⁺, SiHF₂⁺, SiF⁺, SiHF⁺, and NHF⁺. The GeH₃⁺ cation is instead totally unreactive toward NF₃. The different reactivity of XH₃⁺ (X = C, Si, Ge) toward NF₃ has been rationalized by ab initio calculations performed at the MP2 and coupled cluster level of theory. In the reaction of both CH₃⁺ and SiH₃⁺, the kinetically relevant intermediate is the fluorine‐coordinated isomer H₃X‐F‐NF₂⁺ (X = C, Si). This species forms from the exoergic attack of XH₃⁺ to one of the F atoms of NF₃ and undergoes dissociation and isomerization processes which eventually result in the experimentally observed products. The nitrogen‐coordinated isomers H₃X‐NF₃⁺ (X = C, Si) were located as minimum‐energy structures but do not play an active role in the reaction mechanism. The inertness of GeH₃⁺ toward NF₃ is also explained by the endoergic character of the dissociation processes involving the H₃Ge‐F‐NF₂⁺ isomer. Copyright © 2009 John Wiley & Sons, Ltd.     

Plasma etching of refractory metals (W,Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products

The etching rates and reaction products of refractory metals (W, Mo, and Ta) and silicon have been studied in a SF₆-O₂ r.f. plasma at 0.2 torr. The relative concentrations of WF₆ and WOF₄ and the intensities of the WF _n ⁺ (n=3–5), WOF _m ⁺ (m=1–3), MoF _n ⁺ , and MoF _m ⁺ ions have been measured by mass spectroscopy. An analysis of the neutral composition of the plasma during etching of these metals and a comparison with the results obtained for silicon show that at least two species are involved for W and Mo etching: fluorine and oxygen atoms. A reaction scheme is proposed.     

Quantum-chemical approach to the elementary steps of plasma etching

We derive for the first time a mechanism of reactive plasma etching in the system Si/F by the quantum-chemical approach. SiF₂-like species at the surface play an important role. SiF₃ surface complexes also occur. The final etching product SiF₄ is formed with high probability in the gas phase.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

Gas-phase reactions in plasmas of SF6 with O2: Reactions of F with SOF2 and SO2 and reactions of O with SOF2

The plasma chemistry of SF₆/O₂ mixtures is particularly complicated because of the large number of possible reactions. Over a wide range of conditions, products including SF₄, SOF₄, SOF₂, and SO₂F₂ can be formed but thre is considerable uncertainty about the major reactions which contribute to the formation of these species. In this work reactions of oxygen atoms with SOF₂ and fluorine atoms with SOF₂ and SO₂ have been studied in order to determine the principal sources of SO₂F₂ in these plasmas. Reactions were studied at 295 K in a gas flow reactor sampled by a mass spectrometer. No reaction could be detected between oxygen atoms and SOF₂, which for the conditions employed, means that the upper limit for the reaction rate coefficient is 1×10^–14 cm³ sec^–1. The reaction of fluorine atoms with SOF₂ was studied with the helium bath gas number density ranging from 3.1×10¹⁶ to 2.0×10¹⁷ cm^–3. Within this range the rate coefficient increased with increasing [He] from (4.1 to 10.8)×10^–14 cm³ sec^–1. SO₂ was found to react with fluorine atoms with a rate coefficient which appeared to be independent of the helium bath gas number density over the range given above. The possibility that this reaction occurred entirely on the walls of the reactor is discussed.     

Study of reactive ion etching of Si and SiO2 for CFxCl4−x gases

A parametric study of the etching of Si and SiO₂ by reactive ion etching (RIE) was carried out to gain a better understanding of the etching mechanisms. The following fluorocarbons (FCs) were used in order to study the effect of the F-to-Cl atom ratio in the parent molecule to the plasma and the etching properties: CF₄, CF₃Cl, CF₂Cl₂, and CFCl₃ (FC-14, FC-13, FC-12, and FC-11 respectively). The Si etch rate uniformity across the wafer as a function of the temperature of the wafer and the Si load, the optical emission as a function of the temperature of the load, the etch rate of SiO₂ as a function of the sheath voltage, and the mass spectra for each of the FCs were measured. The temperature of the wafer and that of the surrounding Si load strongly influence the etch rate of Si, the uniformity of etching, and the optical emission of F, Cl, and CF₂. The activation energy for the etching reaction of Si during CF₄ RIE was measured. The etch rate of Si depends more strongly on the gas composition than on the sheath voltage; it seems to be dominated by ion-assisted chemical etching. The etching of photoresist shifted from chemical etching to ion-assisted chemical etching as a function of the F-to-Cl ratio and the sheath voltage. The etch rate of SiO₂ depended more strongly on the sheath voltage than on the F-to-Cl ratio.     

The two-photon excitation spectrum of triphenylene in n-heptane single crystals: Chem. Phys. Letters 57 (1978) 496

Chemiluminescence spectra and photon yields resulting from reactions of copper atoms with N₂O, O₂, NO, NF₃, SF₆, F₂, Cl₂, Br₂, and I₂ have been obtained between 200 and 1100 nm. The most interesting feature of these spectra is the strong and peculiar emission from copper atoms observed in the Cu + NF₃ reaction; population inversion has been obtained between some of the Cu states and it is suggested that this is due to energy transfer from N₂(A) formed in the reaction to copper atoms.