Theoretical STM images of alkaline-earth metal adsorbed Si(1 1 1)3 × 2 surfaces

We have performed total-energy calculations to study theoretical scanning tunneling microscopy (STM) images of the Si(1 1 1)3 × 2 surfaces induced by the adsorption of alkaline-earth metals (AEMs). Previously, in a series of works on Ba/Si(1 1 1) system, we have found that the observed Si(1 1 1)3 × 1-Ba LEED phase indeed has a 3 × 2 periodicity with a Ba coverage of 1/6 ML and the HCC substrate structure. Based on results of the Ba case, we proposed that the HCC structure is also adopted for other AEM atoms, which was confirmed by our recent work. In this paper, we mainly report the STM simulations for different AEM systems to compare with existing experimental data. We discuss the difference in the detailed STM images for different AEM adsorbates. Especially, the difference in filled-state images between Mg and other AEM atoms is attributed to the strong Mg-Si interaction.     

Theoretical studies of electronic states and phonon modes on the TiC(0 0 1)(1 × 1) surface

We present a comprehensive picture of structural and electronic properties of the TiC(0 0 1)(1 × 1) surface. Our investigations are based on first-principles calculations within the local-density approximation of the density-functional theory. Good agreement has been observed between our calculation and experimental data for the atomic geometry of the surface. In particular, the calculated bond lengths between the first-layer C and the second-layer Ti (d_1C-2Ti = 2.188 Å) and between the first-layer Ti and the second-layer C (d_1Ti-2C = 2.031 Å) are in good agreement with the corresponding experimental values of 2.25 Å and 2.14 Å, respectively. We have also identified surface electronic states and provided clear support for previously available photoemission measurements. We have further calculated surface phonon modes at the zone centre and at the zone-edge point X using a linear response scheme based on the ab initio pseudopotential method. Our calculated surface phonon results are in excellent agreement with electron energy loss spectroscopy results.     

Olefin bonding mechanism and growth to (1 0 0)(2 × 1):H diamond

The bonding and growth mechanism of photochemically attached olefin molecules to (1 0 0)(2 × 1):H diamond is characterized using atomic force (AFM) and scanning tunneling microscopy (STM) experiments in combination with molecular orbital calculations. To identify growth schemas, diamond surfaces after 10, 40 and 90 min of photo-chemically stimulated growth have been characterized. These data show clearly island formation which is discussed taking into account a growth model from silicon. The island growth shows no directional properties which are attributed to arrangement and geometrical properties of hydrogen terminated carbon bonds at the surface of (1 0 0) oriented (2 × 1) reconstructed diamond.     

Growth kinetics of metastable (3 3 1) nanofacet on Au and Pt(1 1 0) surfaces

A theoretical epitaxial growth model with realistic barriers for surface diffusion is investigated by means of kinetic Monte Carlo simulations to study the growth modes of metastable (3 3 1) nanofacets on Au and Pt(1 1 0) surfaces. The results show that under experimental atomic fluxes, the (3 3 1) nanofacets grow by 2D nucleation at low temperature in the submonolayer regime. A metastable growth phase diagram that can be useful to experimentalists is presented and looks similar to the one found for the stationary growth of the bcc(0 0 1) surface in the kinetic 6-vertex model.     

Early stages of vanadium deposition on Si(1 1 1)-7 × 7

We investigate the low-coverage regime of vanadium deposition on the Si(1 1 1)-7 × 7 surface using a combination of scanning tunnelling microscopy (STM) and density-functional theory (DFT) adsorption energy calculations. We theoretically identify the most stable structures in this system: (i) substitutional vanadium atoms at silicon adatom positions; (ii) interstitial vanadium atoms between silicon adatoms and rest atoms; and (iii) interstitial vanadium - silicon adatom vacancy complexes. STM images reveal two simple vanadium-related features near the Si adatom positions: bright spots at both polarities (BB) and dark spots for empty and bright spots for filled states (DB). We relate the BB spots to the interstitial structures and the DB spots to substitutional structures.     

STM study of Bi-on-Cu(1 0 0)

Scanning tunneling microscopy (STM) has been used to study the various possible structures of adsorbed Bi on the Cu(1 0 0) surface, after equilibration at a temperature of 520 K. All of the structures previously identified by X-ray diffraction (lattice gas, c(2 × 2), c(9√2 × √2)R45°, and p(10 × 10), in order of increasing Bi-coverage) were found to be present on a single sample produced by diffusing Bi onto the Cu(1 0 0) surface from a 3-d source. By investigating the possible coexistence of various pairs of phases, it was demonstrated that the c(2 × 2) phase transforms to the c(9√2 × √2)R45° phase by a first order transition, whereas the transition from c(9√2 × √2)R45° to p(10 × 10) is continuous. In addition, the structure of surface steps was studied as a function of Bi-coverage. The results showed that the presence of Bi changes the nature of the step-step interactions at the Cu(1 0 0) surface from repulsive to attractive. The attractive step-step interactions transform any small deviations from the nominal (1 0 0) orientation of the Cu substrate into (3 1 0) microfacets. When compared with the known equilibrium crystal shape (ECS) of Bi-saturated Cu, the observed microfaceting may imply that the ECS of Cu-Bi alloys is temperature dependent.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

Growth and morphology of the epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) Trilayers

Growth and surface morphology of epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(1 1 0) resulting in dense MgO(1 1 1) films at room temperature as well as at 250 °C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(1 1 0) surface which is confirmed by Auger electron spectroscopy. The top Fe layer deposited on MgO(1 1 1) at room temperature is relatively rough consisting of clusters which can be transformed by annealing to an atomically flat epitaxial Fe(1 1 0) film.     

Characteristic energy band values and electron attenuation length of a chemical-vapor-deposition diamond (0 0 1)2 × 1 surface

The characteristic energy band values such as the Fermi-level position with respect to valence band top for a boron-doped p-type hydrogen-terminated chemical-vapor-deposition (CVD) diamond (0 0 1)2 × 1 surface and for a clean CVD diamond (0 0 1)2 × 1 surface have been determined by a new method with an accuracy of ±0.02 eV. The electron attenuation length for the clean diamond (0 0 1)2 × 1 surface for the electron kinetic energy of C 1s X-ray photoemission peak by Mg Kα excitation is experimentally determined to be 2.1-2.2 nm. These values are compared and discussed with the previously reported experimental and simulation values.     

Atomic and electronic structure of acetic acid on Ge(1 0 0)

We have performed ab initio density-functional theory (DFT) calculations in order to investigate the atomic and electronic structure of acetic acid adsorbed on Ge(1 0 0) surface. Due to its acidity, acetic acid dissociates and the resulting electron-rich acetate group reacts with the electron-deficient down-Ge atom through nucleophilic addition (mono-dentate structure). Further reaction between the electron-rich up-Ge atom and the carboxylic oxygen atom results in bidentate bridged structures, which are energetically most favorable among the tested geometries. The existence of the dissociated H atom on the neighboring Ge atoms and the buckling of Ge dimers are found to affect the feasibility of the formation of bidentate structures. We obtain the simulated STM images from the optimized adsorption geometries for most favorable structures. Theoretical STM images for on-top bidentate structures show characteristic features having on-top protrusions, while those for end-bridged structures show protrusions localized at one side of a dimer row.     

First-principles study of oxidized Nb(1 0 0) surface structures

The atomic positions of the oxygen-induced c(2 × 2)-O, (3 × 1)-O and (4 × 1)-O surface structures on Nb(1 0 0) are determined by first-principles electronic structure calculations within the density functional theory comparing experimentally observed scanning tunneling microscopy (STM) images. STM images of these surfaces are calculated on the basis of the theory of Tersoff and Hamann. The theoretical and experimental STM images of the oxygen-chemisorbed c(2 × 2)-O structural model agree well. However, only the oxide-covered (3 × 1)-O and (4 × 1)-O structural models with two layers of NbO and contraction of the unit length along longitudinal 〈1 0 0〉 direction by 10% result in the theoretical STM images that agree with the experimental ones.     

Deduction of a three-phase model for the (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloy

The (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) surface alloy that forms during high temperature dosing of silane (SiH₄) on Cu(1 1 1) has been investigated using LCAO-DFT. Simulated STM images have shown that experimental images may be interpreted as a mixed phase system consisting of Si ion cores bound in HCP, FCC and twofold bridge sites with a ratio of 25:25:50 rather than previously proposed models where the Si ion cores were bound in only FCC and HCP sites. The new model is shown to be consistent with previously published NIXSW studies.     

The surface structure of BaO on Pt(1 1 1): (2 × 2)-reconstructed BaO(1 1 1)

The surface structure of BaO(1 1 1) has been determined using STM and computer modelling. The BaO(1 1 1) surface was prepared in thin film form on Pt(1 1 1) and presents a surface with twice the lattice parameter expected for that of the bulk termination, i.e. a (2 × 2) reconstruction. Computer modelling indicates that the bulk termination is unstable, but that the (2 × 2) reconstructed BaO(1 1 1) surface has a low surface energy and is hence a stable surface reconstruction. The (2 × 2) reconstruction consists of small, three-sided pyramids with (1 0 0) oriented sides and either oxygen or barium ions at the apices. Less regular surface reconstructions containing the same pyramids are almost equally stable, indicating that we may also expect less regular regions to appear with a fairly random distribution of these surface species. The simulations further suggest that a regular (4 × 4) reconstruction built up of bigger pyramids is even more energetically favourable, and some evidence is found for such a structure in the STM.     

Structural analysis of the c(4 × 2) reconstruction in Si(0 0 1) and Ge(0 0 1) surfaces by low-energy electron diffraction

The c(4 × 2) structures in (0 0 1) surfaces of Si and Ge have been studied by low-energy electron diffraction (LEED). Using a proper cleaning method for the Si surface, we were able to observe clear c(4 × 2) LEED patterns up to incident energy of ∼400 eV as well as the Ge surface. Extensive experimental intensity-voltage curves allowed us to optimize the asymmetric dimer model up to the eighth layer (including the dimer layer) in depth in the dynamical LEED calculation. Optimized structural parameters are almost the same for the Si and Ge except for the height of the buckled-up atom of the asymmetric dimer. For the Ge surface, the structural parameters are in excellent agreement with those obtained by a previous theoretical calculation. The tilt angle and bond length of the dimer are 18 ± 1 (19 ± 1)° and 2.4 ± 0.1 (2.5 ± 0.1) Å for the Si(0 0 1) (Ge(0 0 1)), respectively.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

A theoretical investigation on Pt3Sn(1 0 2) surface alloy and CO-Pt3Sn(1 0 2) system

The adsorption properties of CO on experimentally verified stepped Pt₃Sn(1 0 2) surface were investigated using quantum mechanical calculations. The two possible terminations of Pt₃Sn(1 0 2) were generated and on these terminations all types of possible adsorption sites were determined. The adsorption energies and geometries of the CO molecule for all those sites were calculated. The most favorable sites for adsorption were determined as the short bridge site on the terrace of pure-Pt row of the mixed-atom-ending termination, atop site at the step-edge of the pure row of pure-Pt-ending termination and atop site at the step-edge of the pure-Pt row of the mixed-atom-ending termination. The results were compared with those for similar sites on the flat Pt₃Sn(1 1 0) surface considering the fact that Pt₃Sn(1 0 2) has terraces with (1 1 0) orientation. The LDOS analysis of bare sites clearly shows that there are significant differences between the electronic properties of Pt atoms at stepped Pt₃Sn(1 0 2) surface and the electronic properties of Pt atoms at flat (1 1 0) surface, which leads to changes in the CO bonding energies of these Pt atoms. Adsorption on Pt₃Sn(1 0 2) surface is in general stronger compared to that on Pt₃Sn(1 1 0) surface. The difference in adsorption strength of similar sites on these two surface terminations is a result of stepped structure of Pt₃Sn(1 0 2). The local density of states (LDOS) of the adsorbent Pt and C of adsorbed CO was utilized. The LDOS of the surface metal atoms with CO-adsorbed atop and of their bare state were compared to see the effect of CO chemisorption on the electron density distribution of the corresponding Pt atom. The downward shift in energy peak in the LDOS curves as well as changes in the electron densities of the corresponding energy levels indicate the orbital mixing between CO molecular orbitals and metal d-states. The present study showed that the adsorption strength of the sites has a direct relation with their LDOS profiles.     

Ab initio study of atomic geometry and electronic states of GaSb(0 0 1) reconstructions

We have employed the pseudopotential method and the density functional scheme to study the atomic geometry and electronic states of the GaSb(0 0 1) surface such as (1 × 3), c(2 × 6) and (4 × 3) reconstructions. It is found that both of (1 × 3) and c(2 × 6) reconstructions are characterised by metallic band structures, and thus violate the so-called electron counting rule, one of the main building principles of the stability of compound semiconductor surfaces. We establish that the stability of these reconstructions results from significant elastic deformation in the top atomic layers of the surface, a process which overcomes the penality incurred by the violation of the electron counting rule. The atomic geometry and electronic states for the two reconstructions are compared and contrasted with each other. The α and β phases of the (4 × 3) reconstruction also show large atomic relaxations but are semiconducting and obey the electron counting rule.     

Comparative investigation of the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu2Si/Cu(1 1 1) surface alloys using DFT

The electronic structure of the c(2 × 2)-Si/Cu(0 1 1) surface alloy has been investigated and compared to the structures seen in the three phases of the (√3 × √3)R30°Cu₂Si/Cu(1 1 1) system, using LCAO-DFT. The weighted surface energy increase between the alloyed Cu(0 1 1) and Cu(1 1 1) surfaces is 126.7 meV/Si atom. This increase in energy for the (0 1 1) system when compared to the (1 1 1) system is assigned to the transition from a hexagonal to a rectangular local bonding environment for the Si ion cores, with the hexagonal environment being energetically more favorable. The Si 3s state is shown to interact covalently with the Cu 4s and 4p states whereas the Si 3p state, and to a lesser extent the Si 3d state, forms a mixture of covalent and metallic bonds with the Cu states. The Cu 4s and 4p states are shown to be altered by approximately the same amount by both the removal of Cu ion cores and the inclusion of Si ion cores during the alloying of the Cu(0 1 1) surface. However, the Cu 3d states in the surface and second layers of the alloy are shown to be more significantly altered during the alloying process by the removal of Cu ion cores from the surface layer rather than by the addition of Si ion cores. This is compared to the behavior of the Cu 3d states in the surface and second layers of the each phase of the (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloy and consequently the loss of Cu-Cu periodicity during alloying of the Cu(0 1 1) surface is conjectured as the driving force for changes to the Cu 3d states. The accompanying changes to the Cu 4s and 4p states in both the c(2 × 2)-Si/Cu(0 1 1) and (√3 × √3)R30°-Cu₂Si/Cu(1 1 1) alloys are quantified and compared. The study concludes with a brief quantitative study of changes in the bond order of the Cu-Cu bonds during alloying of both Cu(0 1 1) and Cu(1 1 1) surfaces.     

Adsorption of water on thin V2O3(0 0 0 1) films

V₂O₃(0 0 0 1) films have been grown epitaxially on Au(1 1 1) and W(1 1 0). Under typical UHV conditions these films are terminated by a layer of vanadyl groups as has been shown previously [A.-C. Dupuis, M. Abu Haija, B. Richter, H. Kuhlenbeck, H.-J. Freund, V₂O₃(0 0 0 1) on Au(1 1 1) and W(1 1 0): growth, termination and electronic structure, Surf. Sci. 539 (2003) 99]. Electron irradiation may remove the oxygen atoms of this layer. H₂O adsorption on the vanadyl terminated surface and on the reduced surface has been studied with thermal desorption spectroscopy (TDS), vibrational spectroscopy (IRAS) and electron spectroscopy (XPS) using light from the BESSY II electron storage ring in Berlin. It is shown that water molecules interact only weakly with the vanadyl terminated surface: water is adsorbed molecularly and desorbs below room temperature. On the reduced surface water partially dissociates and forms a layer of hydroxyl groups which may be detected on the surface up to T ∼ 600 K. Below ∼330 K also co-adsorbed molecular water is detected. The water dissociation products desorb as molecular water which means that they recombine before desorption. No sign of surface re-oxidation could be detected after desorption, indicating that the dissociation products desorb completely.     

Interaction of 2,2,6,6-tetramethyl-3,5-heptanedione with the Si(1 0 0)-2 × 1 surface: Scanning tunneling microscopy and density functional theory study

Room temperature adsorption and reaction of 2,2,6,6-tetramethyl-3,5-heptanedione (dpmH) on the Si(1 0 0)-2 × 1 surface has been studied with ultra-high vacuum scanning tunneling microscopy (UHV-STM) and temperature programmed desorption (TPD). The molecule is found to chemisorb as a mixture of at least five distinct species. Density functional theory (DFT) was used to calculate the structures and adsorption energies of 12 possible addition products. Unique bonding assignments for each experimental feature are proposed by consideration of a common intermediate reaction network, and a comparison of possible reaction pathways leading to the final products. These assignments are: OH inter-dimer dissociation, OH intra-dimer dissociation, 1,5 intra-dimer addition, 1,5 inter-dimer addition, and intra-dimer [2 + 2]CO addition with OH dissociation on an adjacent dimer. TPD and STM results show that the molecule dissociates completely upon annealing to 700 °C with formation of the c(4 × 4) phase at low exposures, and SiC islands for exposures exceeding 0.15 L.