Luminescence enhancement of ZnGa2O4:Mn by Ge and Li doping

Structural and optical properties of ZnGa₂O₄:Ge⁴⁺ and ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors were investigated by using X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL) measurements. The XRD patterns show that Ge-doped ZnGa₂O₄ has a spinel phase and its lattice constant increases with respect to ZnGa₂O₄. Emission wavelength shifts from 400 to 360 nm in comparison with ZnGa₂O₄ when Ge is doped in ZnGa₂O₄ and a peak related with oxygen defect was observed in Ge-doped ZnGa₂O₄. The CL luminance of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors is seven times brighter than that of ZnGa₂O₄:Mn²⁺. This drastic luminance improvement can be attributed to Ge doping in ZnGa₂O₄ acting as donor ion and Li doping resulting in increasing conductivity of ZnGa₂O₄. These results indicate that ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.     

Enhanced photoluminescence properties of Zn2SiO4:Mn co-activated with Y/Li under VUV excitation

A series of green phosphors Zn_1.92−2xY_xLi_xSiO₄:0.08Mn²⁺ (0≤x≤0.03) were prepared by solid-state synthesis method. Phase and lattice parameters of the synthesized phosphors were characterized by powder X-ray diffractometer (XRD) and the co-doped effects of Y³⁺/Li⁺ upon emission intensity and decay time were investigated under 147 nm excitation. The results indicate that the co-doping of Y³⁺/Li⁺ has favorable influence on the photoluminescence properties of Zn₂SiO₄:Mn²⁺, and the optimal photoluminescence intensity of Zn_1.90Y_0.01Li_0.01SiO₄:0.08Mn²⁺ is 103% of that of commercial phosphor when the doping concentration of Y³⁺/Li⁺ is 0.01 mol. Additionally, the decay time of phosphor is much shortened and the decay time of Zn_1.90Y_0.01Li_0.01SiO₄:0.08Mn²⁺ is 3.39 ms, shorter by 1.83 ms than that of commercial product after Y³⁺/Li⁺ co-doping.     

High luminance of new green emitting phosphor, Mg2SnO4:Mn

Mg₂SnO₄, which has an inverse spinel structure, was adopted as the host material of a new green emitting phosphor. Luminescence properties of the manganese-doped magnesium tin oxide prepared by the solid state reaction were investigated under vacuum ultraviolet (VUV) ray and low-voltage electron excitation. The Mg₂SnO₄:Mn phosphor exhibited green luminescence with the emission spectrum centered at 500 nm due to spin flip transition of the d-orbital electron associated with the Mn²⁺ ion. Optimum Mn concentration of Mg₂SnO₄:Mn under VUV excitation with 147 nm wavelength and electron beam excitation with 800 V excitation voltage are 0.25 and 0.6 mol%, respectively. The emission intensities of Mg₂SnO₄:Mn phosphors under the two excitation sources are higher than those of Zn₂SiO₄:Mn and ZnGa₂O₄:Mn phosphors. At 0.25 mol% of Mn concentration, on the other hand, the decay time is shorter than 10 ms.     

Synthesis and VUV spectral properties of nanoscaled Zn2SiO4:Mn green phosphor

Nanoscaled Zn₂SiO₄:Mn²⁺ green phosphor with regular and uniform morphology was synthesized by hydrothermal method at a low temperature of 140 °C. The structure and morphology of the phosphor was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The effects of the hydrothermal temperature and the time on the crystallite structure and the vacuum ultraviolet (VUV) photoluminescence (PL) properties were evaluated. The as-synthesized nanoscaled Zn₂SiO₄:Mn²⁺ phosphor exhibited intensive broad emission around 523 nm, which was attributed to the ⁴T₁→⁶A₁ transition of Mn²⁺. The PL intensity increased along with the increasing hydrothermal temperature and time. The heat-treated phosphors exhibited higher PL intensity than the corresponding samples prepared using the conventional solid-state reaction.     

The origin of emission color of reduced and oxidized ZnGa2O4 phosphors

The Ga-O octahedral structure of the reduced and the oxidized ZnGa₂O₄ phosphors was investigated using Reitveld refinement. The correlation between the structural change and the changing emission color was studied. The emission peak shifts to shorter wavelength because of the more contribution of a variation of ligand charge than that of bond length to crystal field. The blueshift behavior of the reduced ZnGa₂O₄ was also observed in Ge⁴⁺-doped ZnGa₂O₄. In addition, Li⁺ ions doping in ZnGa₂O₄ generate extra oxygen ions, and Li⁺-doped ZnGa₂O₄ shows the same emission color as the oxidized ZnGa₂O₄.     

Size-dependent photoluminescence properties under vacuum ultraviolet excitation of Zn2SiO4:Mn nanophosphors

The Zn₂SiO₄:Mn²⁺ nanophosphors with different particle sizes were synthesized via the hydrothermal method by adjusting the concentrations of surfactant and the hydrothermal temperature. The behavior of the photoluminescence as a function of phosphor particle sizes under vacuum ultraviolet excitation was investigated. Higher critical quenching concentration with decreasing particle size of the Zn₂SiO₄:Mn²⁺ nanophosphors was observed. This is ascribed to the hindrance of energy transfer between luminescence centers under vacuum ultraviolet excitation. The prolonged decay time in smaller samples provides further evidence that the energy transfer confinement has an effect on the photoluminescence properties.     

Highly efficient transparent Zn2SiO4:Mn phosphor film on quartz glass

Highly efficient transparent Zn₂SiO₄:Mn²⁺ film phosphors on quartz substrates were deposited by the thermal diffusion of sputtered ZnO:Mn film. They show a textured structure with some preferred orientations. Our film phosphor shows, for the best photoluminescence (PL) brightness, a green PL brightness of about 20% of a commercial Zn₂SiO₄:Mn²⁺ powder phosphor screen. The film shows a high transmittance of more than 10% at the red-color region. The excellence in PL brightness and transmittance can be explained in terms of the textured crystal growth with a continuous gradient of Zn₂SiO₄: Mn²⁺ crystals.     

Energy transfer among three luminescent centers in full-color emitting ZnGa2O4:Mn, Cr phosphors

The ZnGa₂O₄:Mn²⁺, Cr³⁺ phosphors show three colors; the blue band of 380 nm from the charge transfer between Ga-O, the green band of 505 nm from Mn²⁺ and the red band of 705 nm from Cr³⁺. As a variation of Mn²⁺ or Cr³⁺ concentrations in ZnGa₂O₄:Mn²⁺, Cr³⁺, the relative emission intensity can be tuned. This phenomenon is explained in terms of the energy transfer based on four factors: the spectral overlap between the energy donors (Ga-O) and the energy accepters of Mn²⁺ or Cr³⁺, the absorption cross section of the energy accepters, the distance between them, and the decay time of the energy donors. ZnGa₂O₄:0.0025Mn²⁺, 0.010Cr³⁺ shows the CIE coordinates of x=0.4014, y=0.3368, which is a pure white light. The single-phased full-color emitting ZnGa₂O₄:Mn²⁺, Cr³⁺ phosphors can be applied to illumination devices.     

Vacuum Ultraviolet Excited Photoluminescence Properties of Novel Na3Y9O3（BO3）8：Tb^3＋ Phosphor

The novel vacuum ultraviolet （VUV） excited Na3 Y9O3 （BO3）8：Tb^3＋ （NYOB：Tb^3＋） green phosphor is prepared. Strong VUV photoluminescence and high quenching concentration of Tb^3＋ （20 wt%） are observed in NYOB： Tb^3＋ and the strong emission are correlated with the unique layer-type structure of NYOB. All the characteristic 4 f - 5d transitions of Tb^3＋ and the host absorption band in VUV region are identified in the excitation spectrum. Based on the results, the energy levels scheme of Tb^3＋ in NYOB：Tb^3＋ is first established. This newly developed NYOB：Tb^3＋ phosphor shows excellent optical properties when compared with the commercial Zn2SiO4：Mn^2＋ and would be a potential VUV-excited green phosphor.     

Charge compensation on the luminescence properties of ZnWO4:Tb phosphors via hydrothermal synthesis

A phosphor Tb³⁺-doped ZnWO₄ (ZWO:Tb) phosphors were prepared by a hydrothermal method. X-ray powder diffraction (XRD) analysis revealed that the as-obtained sample is pure ZnWO₄ phase. The excitation and emission spectra indicated that the phosphor could be well excited by ultraviolet light (272 nm) and emit blue light at about 491 nm and green light at about 545 nm. Significant energy transfer from WO₄²⁻ groups to Tb³⁺ ions has been observed. Two approaches to charge compensation are investigated: (a) 2Zn²⁺ = Tb³⁺ + M⁺, where M⁺ is a monovalent cation like Li⁺, Na⁺ and K⁺ acting as a charge compensator; (b) 3Zn²⁺ = 2Tb³⁺ + vacancy. Compared with two charge compensation patterns in the ZnWO₄:Tb³⁺, it has been found that ZnWO₄:Tb³⁺ phosphors used Li⁺ as charge compensation show greatly enhanced bluish-green emission under 272 nm excitation.     

EPR, luminescence and IR studies of Mn activated ZnGa2O4 phosphor

Electron paramagnetic resonance (EPR), luminescence and infrared spectra of Mn²⁺ ions doped in zinc gallate (ZnGa₂O₄) powder phosphor have been studied. The EPR spectra have been recorded for zinc gallate phosphor doped with different concentrations of Mn²⁺ ions. The EPR spectra exhibit characteristic spectrum of Mn²⁺ ions (S=I=5/2) with a sextet hyperfine pattern, centered at g_eff=2.00. At higher concentrations of Mn²⁺ ions, the intensity of the resonance signals decreases. The number of spins participating in the resonance has been measured as a function of temperature and the activation energy (E_a) is calculated. The EPR spectra of ZnGa₂O₄: Mn²⁺ have been recorded at various temperatures. From the EPR data, the paramagnetic susceptibility (χ) at various temperatures, the Curie constant (C) and the Curie temperature (θ) have been evaluated. The emission spectrum of ZnGa₂O₄: Mn²⁺ (0.08 mol%) exhibits two bands centered at 468 and 502 nm. The band observed at 502 nm is attributed to ⁴T₁→⁶A₁ transition of Mn²⁺ ions. The band observed at 468 nm is attributed to the trap-state transitions. The excitation spectrum exhibits two bands centered at 228 and 280 nm. The strong band at 228 nm is attributed to host-lattice absorption and the weak band at 280 nm is attributed to the charge-transfer absorption or d⁵→d⁴s transition band. The observed bands in the FT-IR spectrum are assigned to the stretching vibrations of M-O groups at octahedral and tetrahedral sites.     

Characterization of ZnGa2O4:Mn nanophosphor synthesized by the solvothermal method in 1,4-butanediol-water system

We characterized ZnGa₂O₄:Mn²⁺ (ZnGa₂O₄—zinc gallate) nanophosphor synthesized by the solvothermal method in 1,4-butanediol-containing water to increase the amount of Mn²⁺ ions incorporated in the ZnGa₂O₄ matrix without post-heat treatment. We investigated the influence of water content in the solvent on the photoluminescence (PL) intensity and the Mn amount, the latter being measured by X-ray fluorescence analysis and electron paramagnetic resonance spectroscopy. The PL intensity per Mn amount reached the maximum at the 50 wt% water content. The addition of water promotes repeated dissolution and precipitation, resulting in homogeneous Mn²⁺ distribution in the ZnGa₂O₄ matrix. This suggests that the solvothermal method in the 1,4-butanediol-water system is useful for increasing the amount of Mn²⁺ ions incorporated in the ZnGa₂O₄ matrix without post-heat treatment. At the water content >50 wt%, the decrease in PL intensity is attributed to the optical absorption of the by-product, MnOOH.     

Optical and structural properties of nanosized ZnGa2O4:Cr phosphor

Nanosized ZnGa₂O₄:Cr³⁺ powder is synthesized through hydrothermal method. The average particle size is 20 nm and they are spherical in shape. The excitation band from the charge transfer between Cr³⁺-O²⁻ shows a blueshift behavior due to quantum confinement effect. X-ray diffraction pattern, Fourier transform-infrared spectrum, and electron paramagnetic resonance signal indicate that nanosized ZnGa₂O₄:Cr³⁺ phosphor shows many defect-related energy states and heavy lattice distortion in comparison with bulk ZnGa₂O₄:Cr³⁺ phosphor. Many defect states result in more nonradiative loss and shorter decay time.     

Ca2SiO4:Dy3+材料的制备及其发光特性

采用高温固相法制备了Ca₂SiO₄:Dy³⁺发光材料.在365nm紫外光激发下,测得Ca₂SiO₄:Dy³⁺材料的发射光谱为一多峰宽谱,主峰分别位于486nm,575nm和665nm处;监测575nm发射峰,测得材料的激发光谱为一多峰宽谱,主峰分别位于331nm,361nm,371nm,397nm,435nm,461nm和478nm处.研究了Dy³⁺掺杂浓度对Ca₂SiO₄:Dy³⁺材料发射光谱及发光强度的影响,结果显示,随Dy³⁺浓度的增大,黄、蓝发射峰强度比(Y/B)逐渐增大,利用Judd-Ofelt理论解释了其原因;随Dy³⁺浓度的增大,Ca₂SiO₄:Dy³⁺材料发光强度先增大,在Dy³⁺浓度为4 mol%时到达峰值,而后减小,根据Dexter理论其浓度猝灭机理为电偶极-电偶极相互作用.研究了电荷补偿剂Li⁺,Na⁺和K⁺对Ca₂SiO₄:Dy³⁺材料发射光谱的影响,结果显示,不同电荷补偿剂下,随电荷补偿剂掺杂浓度的增大,Ca₂SiO₄:Dy³⁺材料发射光谱强度的演化趋势相同,即Ca₂SiO₄:Dy³⁺材料发射峰强度先增大后减小,但不同电荷补偿剂下,材料发射峰强度最大处对应的补偿剂浓度不同,对应Li⁺,Na⁺和K⁺时,浓度分别为4mol%,4mol%和3mol%. 关键词： 白光LED 2SiO₄:Dy³⁺')" href="#">Ca₂SiO₄:Dy³⁺ 发光特性 电荷补偿     

Luminescence properties and mechanism of Zn1.92−xBaxSi1−yTiyO4:0.08Mn phosphors in VUV region

The present commercial phosphor Zn₂SiO₄:Mn²⁺ requires further improvement because of its long decay time. In this work, the co-doping effects of Ba²⁺ and Ti⁴⁺ upon emission intensity and decay time were investigated. Ba²⁺ and Ti⁴⁺ cations have favorable influences on the photoluminescent properties. When doped with appropriate amount of Ba²⁺, the intensity of green emission was increased 12% and the decay time was shortened 18%. When doped with appropriate amount of Ti⁴⁺, the luminescence intensity was enhanced a little, and the decay time was shortened 14%. Ba²⁺ and Ti⁴⁺ were co-doped in Zn₂SiO₄:Mn²⁺ system, the luminescence intensity was enhanced 18%, and the decay time was shortened sharply (about 31%).     

节能灯用BaMgAl10O17:Eu2+,Mn2+荧光粉的劣化机理研究

对节能灯用BaMgAl₁₀O₁₇: Eu²⁺,Mn²⁺荧光粉的热劣化和紫外辐照劣化机理进行了对比研究. 发现热处理和紫外辐照处理均对BaMgAl₁₀O₁₇: Eu²⁺,Mn²⁺产生明显的发光劣化作用. 研究结果表明：热劣化主要涉及到Eu²⁺ 的氧化及其格位偏移, 而紫外辐照劣化与上述过程无关. 紫外辐照劣化主要源自高能紫外辐照使Eu²⁺ 处于更加不稳定的状态, 从而降低Eu²⁺ 的直接吸收和发射强度.     

Spherical Zn2SiO4:Eu@SiO2 phosphor particles in core-shell structure: Synthesis and characterization

Spherical SiO₂ particles have been coated with Zn₂SiO₄:Eu³⁺ phosphor layers by a Pechini sol-gel process. The microstructure and luminescent properties of the obtained Zn₂SiO₄:Eu³⁺@SiO₂ particles were well characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra, and lifetime. The results demonstrate that the Zn₂SiO₄:Eu³⁺@SiO₂ particles, which have regular and uniform spherical morphology, emitted an intensive red light emission at 613 nm under excitation at 395 nm. Besides, the effects of the Eu³⁺ concentration, annealing temperature and charge compensators of Li⁺ ions on the PL emission intensities were investigated in detail.     

Red emission in B- and Li-doped SrAl2O4:Eu phosphor under UV excitation

Samples of SrAl₂O₄:Eu³⁺ doped with B³⁺ and SrAl₂O₄:Eu³⁺ co-doped with B³⁺ and Li⁺ have been prepared by the solid-reaction method. The influence of B³⁺ and Li⁺ contents on luminescence property has been investigated. It is found that the substitution of B³⁺ for Al³⁺ greatly improves red emission intensity at 591, 615 and 701 nm. The dopant Li⁺ as charge compensator in SrAl₂O₄:Eu³⁺, B³⁺ can further enhance luminescence intensity. The strongest red emission is obtained in the Sr(Al_1.9, B_0.1)O₄:Eu_0.02³⁺, Li⁺_0.02 sample. The developed phosphors can be efficiently excited by ultraviolet (UV) light from 350 to 480 nm, which indicates that B³⁺ and Li⁺ co-doped SrAl₂O₄:Eu³⁺ is a good candidate phosphor applied in solid-state lighting in conjunction with white UV light-emitting diodes (LEDs).     

Combustion synthesis and luminescent properties of a new material Li2(Ba0.99,Eu0.01)SiO4:B for ultraviolet light emitting diodes

Using urea as fuel and boric as flux, a novel bluish green emitting phosphor Li₂(Ba_0.99,Eu_0.01)SiO₄:B³⁺ has been successfully synthesized using a combustion method. The material has potential application as the fluorescent material for ultraviolet light-emitting diodes (UV-LEDs). The dependence of the properties of Li₂(Ba_0.99,Eu_0.01)SiO₄:B³⁺ phosphors upon urea concentration, boric acid doping and initiating combustion temperature were investigated. The crystallization and particle sizes of Li₂(Ba_0.99,Eu_0.01)SiO₄:B³⁺ have been investigated by using powder X-ray diffraction (XRD) and transmission electron microscopy (TEM). Luminescence measurements showed that the phosphors can be efficiently excited by ultraviolet (UV) to visible region, emitting a bluish green light with peak wavelength of 490 nm. The results showed that the boric acid was effective in improving the luminescence intensity of Li₂(Ba_0.99,Eu_0.01)SiO₄ and the optimum molar ratio of boric acid to barium nitrate was about 0.06. The optimized phosphors Li₂(Ba_0.99,Eu_0.01)SiO₄:B_0.06³⁺ showed 160% improved emission intensity compared with that of the Li₂(Ba_0.99,Eu_0.01)SiO₄ phosphors under UV (λ_ex=350 nm) excitation.     

Luminescent properties of R doped Sr2SiO4:Eu(R=Li, Na and K) red-emitting phosphors for white LEDs

Sr₂SiO₄:Eu³⁺ and Sr₂SiO₄:Eu³⁺ doped with R⁺(R⁺=Li⁺, Na⁺ and K⁺) phosphors were prepared by conventional solid-state reaction and investigated by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR) and photoluminescence spectroscopy. XRD patterns and SEM reveal that the optimal firing condition for Sr₂SiO₄:Eu³⁺ was 1300 °C for 4 h. The excitation and emission spectra indicate that the phosphor can be effectively excited by ultraviolet (395 nm) and blue (466 nm) light and emits intense red light peaked at around 614 nm corresponding to the ⁵D₀→⁷F₂ transitions of Eu³⁺. In the research work, the effect of R⁺ contents on luminescence property and the Eu³⁺ concentration quenching process have also been investigated. The Eu³⁺ concentration quenching mechanism was verified to be a multipole-multipole interaction and the critical energy-transfer distance was calculated to be around 14.6 Å. The dopant R⁺(R⁺=Li⁺, Na⁺ and K⁺) as charge compensator in Sr₂SiO₄:Eu³⁺ can further enhance luminescence intensity, and the emission intensity of Sr₂SiO₄:Eu³⁺ doping Li⁺ is higher than that of Na⁺ or K⁺.