Effect of potassium permanganate on morphological,structural and electro-optical properties of graphene oxide thin films

This work investigated the effect of Potassium Permanganate (KMnO₄) on graphene oxide (GO) properties, especially on electrical properties. The GO thin films were deposited on a glass substrate using drop casting technique and were analysed by using various type of spectroscopy (e.g. Scanning Electron Microscopy (SEM), Ultra- Violet Visible (UV–VIS), Fourier Transform Infrared (FTIR), X-Ray Diffraction (XRD), optical band gap, Raman Spectroscopy). Furthermore, the electrical experiments were carried out by using current–voltage (I-V) characteristic. The GO thin film with 4.5 g of KMnO₄ resulted in higher conductivity which is 3.11 × 10^?4 S/cm while GO with 2.5 g and 3.5 g of KMnO₄ achieve 2.47 × 10^?9 S/cm and 1.07 × 10^?7 S/cm, respectively. This further affects the morphological (SEM), optical (band gap, UV–Vis, FTIR, and Raman), and crystalline structural (XRD) properties of the GO thin films. The morphological, elemental, optical, and structural data confirmed that the properties of GO is affected by different amount of KMnO₄ oxidizing agent, which revealed that GO can potentially be implemented for electrical and electronic devices.     

CdS thin film: Synthesis and characterization

CdS thin films have been deposited by dip technique using succinic acid as a complexing agent. The structural characterizations of films have been studied by X-ray diffraction. X-ray diffraction pattern prove crystallinity of the deposited films that crystallize in the cubic phase of CdS. The films show high absorption and band gap value which were found to be 2.58 eV. The specific conductivity of the film was found to be in the order of 10^?7 (Ω cm)^?1.     

Microstructure,dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>]O<Subscript>3</Subscript> thin films

Ba[Zr_0.25Ti_0.75]O₃ (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 °C for different times and at 700 °C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet–visible (UV–vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 °C were approximately 148 and 0.08 at 1 MHz, respectively. UV–vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.     

Determination of the Optical GAP in Thin Films of Amorphous Dilithium Phthalocyanine Using the Tauc and Cody Models

Semiconducting thin films were grown on quartz substrates and crystalline silicon wafers, using dilithium phthalocyanine and the organic ligands 2,6-dihydroxyanthraquinone and 2,6-diaminoanthraquinone as the starting compounds. The films, thus obtained, were characterized by Fourier Transform infrared (FTIR), fast atomic bombardment (FAB+) mass and ultraviolet-visible (UV-Vis) spectroscopies. The surface morphology of these films was analyzed by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM). It was found that the temperature-dependent electric current in all cases showed a semiconductor behavior with conductivities on the order of 10^-6·S cm^-1, whereas the highest value corresponded to the thin film based upon the bidentate amine. The Tauc and Cody optical band gap values of thin films were calculated from the absorption coefficients and were found to be around 1.5 eV, with another strong band between 2.3 and 2.43 eV, arising from non-direct transitions. The curvature in the Tauc plot influencing the determination of the optical gap, the Tauc optical gap corresponding to the thicker film is smaller. The dependence of the Cody optical gap on the film thickness was negligible.     

Magnetic,optical and electrical properties of Mn-doped CuCrO<Subscript>2</Subscript> thin films prepared by chemical solution deposition method

CuCrO₂ and CuCrO₂:Mn thin films were prepared on sapphire substrates by chemical solution deposition method. The effects of the annealing temperatures and Mn concentration on the structural, electrical and optical properties were investigated. The X-ray diffraction measurement was used to confirm the c-axis orientation of CuCrO₂ and CuCrO₂:Mn thin films. The maximum transmittances of the films in the visible region are about 65% with direct band gaps of 3.25 eV. All films showed the p-type conduction and semiconductor behavior. The electrical conductivity decreases rapidly with the increase of Mn content, the maximum of the electrical conductivity of 1.35 × 10⁻² S cm⁻¹ is CuCrO₂ film deposited at 600 °C temperature in 10⁻³ Torr vacuum, which is about four orders of magnitude higher than that of the Mn-doped CuCrO₂ thin film. The energy band of the samples is constructed based on the grain-boundary scattering in order to investigate the conduction mechanism. Moreover, the samples exhibit a clear ferromagnetism, which was likely ascribed to originating from the double-exchange interaction between the Mn³⁺ and Cr³⁺ ions.     

Photovoltaic Behaviour of Titanyl Phthalocyanine Thin Films and Titania Bilayer Films

Summary: Titanyl phthalocyanine (TiOPc) thin films were prepared using evaporation and surface polymerization by ion-assisted deposition (SPIAD) in a vacuum deposition system. These films were characterized by means of ultraviolet and X-ray photoelectron spectroscopy as well as UV/Vis absorption spectroscopy. Valence band and elemental content indicated that phthalocyanine electronic and chemical structures were largely preserved during SPIAD. Further, bilayer thin films of titania (TiO₂) and SPIAD TiOPc were prepared. TiO₂ film was deposited by reactive magnetron sputtering of TiO₂ target. Study of the structured samples was focused on the optical and electrical properties of the composite films. The films were characterized by non-contact photovoltage measurements and UV-Vis spectroscopy. These results suggest there is a possibility to use these bilayer thin films in photovoltaic solar cells, however further experiments to improve conductivity of the films will be required.     

Optical properties of a-Se90In10−x Snx chalcogenide thin films before and after gamma irradiation

Amorphous Se₉₀In_10?xSn_x (x=2, 4, 6, and 8) thin films of thickness 1000 Å were prepared on glass substrates by the thermal evaporation technique. Optical parameters of the films were investigated, in the wavelength range 400–700 nm, before and after irradiation by 4, 8, and 12 kGy doses of γ-ray. The optical absorption coefficient α for as-deposited and gamma irradiated films was calculated from the reflectance R and transmittance T measurements, which were recorded at room temperature. From the knowledge of α, at different wavelengths, the optical band gap E_g was calculated for all compositions of Se–In–Sn thin films before and after gamma irradiation. Results indicate that allowed indirect optical transition is predominated in as-deposited and irradiated films. Besides, it is found that the band gap decreases with increasing Sn concentration and this is attributed to the corresponding decrease in the average single bond energy of the films. The band gap, after irradiation at different doses of γ-ray, was found to decrease for all compositions of the studied films. This post-irradiation decrease in the band gap was interpreted in terms of a bond distribution model.     

Characteristics of SnO2 thin films prepared by SILAR

SnO₂ thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 °C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015–0.815 (Ω-cm)⁻¹ as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants (ɛ_o, ɛ_∞) values were calculated by using the optical band gap values as a function of the film thickness.     

Photocatalytic Degradation of Glyphosate in Water by N‐Doped SnO2/TiO2 Thin‐Film‐Coated Glass Fibers

Photocatalytic degradation of glyphosate contaminated in water was investigated. The N‐doped SnO₂/TiO₂ films were prepared via sol–gel method, and coated on glass fibers by dipping method. The effects of nitrogen doping on coating morphology, physical properties and glyphosate degradation rates were experimentally determined. Main variable was the concentration of nitrogen doping in range 0–40 mol%. Nitrogen doping results in shifting the absorption wavelengths and narrowing the band gap energy those lead to enhancement of photocatalytic performance. The near optimal 20N/SnO₂/TiO₂ composite thin film exhibited about two‐ and four‐folds of glyphosate degradation rates compared to the undoped SnO₂/TiO₂ and TiO₂ films when photocatalytic treatment were performed under UV and solar irradiations, respectively, due to its narrowest band gap energy (optical absorption wavelength shifting to visible light region) and smallest crystallite size influenced by N‐doping.     

Electronic transport and optical properties of indium oxide thin films prepared by thermal oxidation

Indium oxide (In₂O₃) thin films were prepared using thermal oxidation of metallic films. Indium metallic thin films were deposited onto glass substrates, by vacuum thermal evaporation. Optical and electronic transport properties of thermally oxidized In₂O₃ films were investigated and these properties were correlated with their preparation conditions, more exactly with oxidation temperatures (T_ox = 623 K, 673 K and 700 K, respectively). Structural analysis, investigated by X-ray diffraction and electron diffraction, reveals that the obtained films possess a polycrystalline structure. The temperature dependence of electrical conductivity was studied using surface-type cells with Ag electrodes. The electronic transport mechanism, in respective films, is discussed in terms of crystallite boundary trapping, proposed by Seto. Some characteristic parameters such as energy barrier, impurity concentration, distribution of interface states, were determined. Transmission and reflection spectra were recorded and by using the values of these coefficients, some optical parameters were calculated (absorption coefficient, optical band gap, refractive index).     

Layered molybdenum oxide thin films electrodeposited from sodium citrate electrolyte solution

Molybdenum oxide thin films were prepared electrochemically onto the selenium predeposited tin oxide-coated glass substrates using 0.22 M sodium citrate (C₆H₅Na₃O₇) solution (pH 8.3) and sodium molybdate as a precursor. Cyclic voltammetry was used to determine the deposition potential effects on molybdenum compound speciation, while quantitative thin film composition was obtained from X-ray photoelectron spectroscopy depth profiles. Thin molybdenum film growth and composition was potential dependant. Predominant molybdenum species was Mo(IV) at all deposition potentials and deposition times. Optical properties of the molybdenum oxide thin films were determined using UV–VIS spectroscopy. The absorption edge varied between 560 and 650 nm, whereas optical band gap values—between 1.79 and 2.19 eV—well within the limits for solar light-induced chemical reactions.     

Structural and optical characterization of sol–gel derived boron doped Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanostructured films

Pure and boron (B) doped iron oxide (Fe₂O₃) nanostructured thin films were prepared by sol–gel spin coating method. The effects of B (0.1, 0.2, 0.5 and 1 %) content on the crystallinity and morphological properties of Fe₂O₃ films were investigated by X-ray diffractometer and atomic force microscopy. X-ray diffraction patterns revealed that the Fe₂O₃ films have a rhombohedral crystalline phase of α-Fe₂O₃ phase (hematite) with nanostructure and their crystallite size (D) is changed from 27 ± 2 to 45 ± 5 nm with B dopant content. The minimum crystallite size value of 27 ± 2 nm was obtained for 0.2 % B doped Fe₂O₃ film. Carrying out UV–VIS absorption study for both doped and undoped films at room temperature, it was realized that allowed optical transitions may be direct or indirect transitions. The direct and indirect energy gap values for pure Fe₂O₃ were obtained to be 2.07 and 1.95 eV, respectively. The optical band gap value of the films was changed with 0.1 % B doping to reach 1.86 eV for direct band gap and 1.66 eV in case of indirect band gap.     

Investigations on electrical properties of PVP:KIO4 polymer electrolyte films

Solid polymer electrolytes based on poly(vinyl pyrrolidone) (PVP) complexed with potassium periodide (KIO₄) salt at different weight percent ratios were prepared using solution-cast technique. X-ray diffraction (XRD) results revealed that the amorphous nature of PVP polymer matrix increased with the increase of KIO₄ salt concentration. The complexation of the salt with the polymer was confirmed by Fourier transform infrared (FTIR) spectroscopy studies. The ionic conductivity was found to increase with the increase of temperature as well as dopant concentration. The maximum ionic conductivity (1.421 × 10⁻⁴ S cm⁻¹) was obtained for 15 wt% KIO₄ doped polymer electrolyte at room temperature. The variation of ac conductivity with frequency obeyed Jonscher power law. The dynamical aspects of electrical transport process in the electrolyte were analyzed using complex electrical modulus. The peaks found in the electric modulus plots have been characterized in terms of the stretched exponential parameter. Optical absorption studies were performed in the wavelength range 200–600 nm and the absorption band energies (direct band gap and indirect band gap) values were evaluated. Using these polymer electrolyte films electrochemical cells were fabricated and their discharge characteristics were studied.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

Nanocrystalline Zn1−x Ag x O y thin films evolved through electrodeposition for photoelectrochemical splitting of water

Nanocrystalline Zn_1???x Ag _x O _y (x?=?10^??3???50?×?10^??3) thin films evolved through electrodeposition over ITO substrate have been investigated for photoelectrochemical splitting of water. Samples were characterized by XRD, EDX, SEM, AFM, UV–visible optical absorption, and Mössbauer spectral analysis. Ag incorporation led to a decrease in the band gap energy and alterations in microstructural and semiconductor properties. Raising Ag concentration in samples up to 1 % at. caused a significant reduction in density and electrical resistivity, enhanced absorption along with red shift to the band gap energy, anodic shift in flat band potential, and increased charge carrier density, enabling 1 % at. Ag-incorporated ZnO films most photosensitive by yielding highest short-circuit current, photocurrent density, and applied bias photon to current efficiency. Plausible reasons have been offered.     

Synthesis and characterization of chemically grown electrochromic tungsten oxide

Tungsten oxide thin films, which are cathodic coloration materials that are used in electrochromic devices, were prepared by a chemical growth method and their electrochromic properties were investigated. The thin films of WO₃ were deposited onto electrically conducting substrates: fluorine doped tin oxide coated glass (FTO) with sheet resistance of about 10 Ω/cm. Transparent, uniform and strongly adherent thin film samples of WO₃ were studied for their structural, morphological, optical and electrochromic properties. The XRD data confirmed the monoclinic crystal structure of WO₃ thin films. The direct band gap Eg for the films was found to be 2.95 eV which is good for electrochromic device application. The electrochromism of WO₃ thin film was evaluated in 0.5 M LiClO₄/propylene carbonate for Li⁺ intercalation. Electrochromic properties of WO₃ thin films were studied with the help of Cyclic Voltammetry (CV), Chronoamperometry (CA) and Chronocoulometry (CC) techniques.     

Structural,morphological, optical and sensing properties of SnSe and SnSe2 thin films as a gas sensing material

In this work, orthorhombic tin selenide thin films were grown onto three different substrates using an organophosphorus precursor (Ph₃PSe) via chemical vapor deposition. Structural, microstructural and morphological properties of the as-grown films were systematically investigated using XRD, ESEM and AFM respectively. Grain size, microstrain and dislocation were calculated and correlated with different factors. The effects of selenization temperature and substrate type on different film properties and gas sensing response of films deposited onto alumina substrates were investigated. XRD analysis reveals the appearance of a mixed phase as a function of temperature. Furthermore, substrate type plays a key role in the rate of appearance of each phase. EDAX analysis confirms the existence of the desired elements and detect the evaporation of selenium and the appearance of oxygen at higher temperatures. Atomic force microscopy (AFM) was used to investigate the surface topography of the grown thin films.Optical properties of the films grown onto glass and silicon substrates were studied. From the recorded optical data, a direct optical band gap in the range of 0.9–1.3 eV was obtained with an absorption coefficient α > 10⁴ cm⁻¹ throughout large spectral regions. Optical studies were remarkably affected by the obtained phase as well as the selenization temperature. Gas sensing properties of the samples deposited onto alumina substrates were examined as a new sensing material for detection of methane gas at different concentrations. SnSe sensors show high sensitivity, are reversible and exhibit fast response and recovery times compared to SnSe₂ sensors.     

Investigation of molar concentration effect on structural,optical, electrical,and photovoltaic properties of spray‐coated Cu2O thin films

High quality copper oxide thin films were prepared by nebulizer spray pyrolysis technique using different concentrations of copper precursor solution. Concentration‐dependent structural, morphological, optical, and electrical properties of the prepared films are discussed. X‐ray diffraction studies done for the samples confirmed that the deposited films are in Cu₂O phase with polycrystalline cubic structure. Atomic force microscopy analysis revealed that all the films are composed of nano sheet shaped grains covering the substrate surface. Optical studies done on the samples showed band gap values 2.42, 2.31, and 2.02 eV for the solution concentration 0.01, 0.05, and 0.1 M, respectively. Photoluminescence spectral analysis showed the emission band at 620 nm confirming the formation of cuprous oxide. Electrical analysis of the films showed p‐type conductivity with a low resistivity 2.19 × 10² Ω.cm and high carrier concentration 16.76 × 10 ¹⁵ cm⁻³ for the molar concentration 0.1 M. In this work, Cu₂O/ZnO heterojunctions were also prepared, and solar cell properties were studied; they were found to show increased open circuit voltage and short circuit current for higher copper concentration.     

Effect of annealing temperatures and of high content of the iron ion (Fe<Superscript>3+</Superscript>)-doping on transition anatase–rutile phase of nanocrystalline TiO<Subscript>2</Subscript> thin films prepared by sol–gel spin coating

Titanium dioxide doped with iron (III) was prepared by sol–gel Spin Coating method. The phase structures, morphologies, particle size of the doped TiO₂ have been characterized by X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM) and ultraviolet–visible (UV–Vis) spectrophotometer. The XRD and Raman results show that the 10% Fe³⁺-doped TiO₂ thin films crystallize in anatase phase between 600 and 800 °C, and into the anatase–rutile phase at 1,000 °C, and further into the rutile phase when the content of Fe³⁺ increases (20%). The grain size calculated from XRD patterns shows that the crystallinity of the obtained anatase particles increased from 39.4 to 43.4 nm as the temperature of annealing increase, whereas the size of rutile crystallites increases, with increasing Fe³⁺ concentrations from 36.9 to 38.1 nm. The AFM surface morphology results confirmed that the particle size increases by increasing the annealing temperature and also with an increasing of Fe³⁺ content. The optical band gap (E _g) of the films was determined by the UV–Vis spectrophotometer. We have found that the optical band gap decreased with an increasing of annealing temperatures and also with an increasing of Fe³⁺ content.     

Evolution of crystalline structure in SnS thin films prepared by chemical deposition

Crystal structure and morphology undergo significant evolution in thin films of tin(II) sulfide prepared by chemical deposition, over a narrow interval of bath temperature of 20–40 °C, but has not been recognized in previous studies. The chemical bath is constituted using tin(II) chloride, triethanolamine, ammonia(aq.) and thioacetamide. At bath temperature of 20 °C, the deposition rate of the film is 10 nm/h; and at 24 h, a film of thickness 260 nm is obtained. This film is compact and with a predominantly cubic (Cub-) crystalline structure. At 40 °C, the deposition rate is 25 nm/h, and a film of 600 nm in thickness is deposited in 24 h. However, this film has evolved into vertically stacked platelets of orthorhombic (OR-) crystalline structure. The transition from compact-to-platelet morphology as well as from Cub-to-OR-crystalline structure is observed near a deposition temperature, 35 °C. The Cub-SnS has a characteristic high optical band gap, 1.67 eV (direct gap; forbidden transitions) with an electrical conductivity, 10⁻⁷(Ω cm)⁻¹; both properties being un-affected when films are heated at 300 °C in a nitrogen ambient. In OR-SnS, the band gap is 1.1 eV (indirect gap; allowed transitions). The electrical conductivity of such films is notably higher, 10⁻⁴ (Ω cm)⁻¹, which increases further by an order of magnitude when the films have been heated at 300 °C in nitrogen.