Thermoluminescence of corundum containing anion defects following ultraviolet laser and x irradiation

The thermoluminescence of single crystals of corundum containing anion defects following x-ray and laser excitation is investigated. Its features in the luminescence bands of F, F⁺, and Cr³⁺ centers are studied. Synchronous measurements of the thermoluminescence and thermally stimulated exoelectron emission are performed by the fractional glow technique following x-ray and laser excitation of the samples. It follows from the results obtained that several traps are active in the temperature range of the principal dosimetric peak (400–500 K). The spectral sensitivity curve contains maxima corresponding to absorption bands of F, F⁺, and Al _i ⁺ centers. A possible mechanism for the recombination luminescence of F centers is discussed. It is found that the material exhibits high sensitivity to small doses of ultraviolet laser radiation. Zh. Tekh. Fiz. 67, 72–76 (July 1997)     

Storing energy in lithium fluoride crystals irradiated with femtosecond laser pulses

The release of energy in the form of the light sum of thermally stimulated luminescence (TSL), stored under conditions of self-focusing and the multiple filamentation of femtosecond laser radiation during the interaction between model wide-bandgap dielectric crystals of lithium fluoride is studied. It is shown that F₂ color centers are important centers of emission in the TSL process.     

The orange luminescence band in MgO crystals

Nominally pure MgO crystals exhibit a bright orange luminescence when excited with u v or visible laser light This luminescence has been characterized using a variety of measurements with pulsed and cw laser sources Its amplitude increases with temperature to about 400 K. while the lifetime of emission decreases from 270 μs at 290 K to 9 μs at 433 K This emission appears to originate in hole recombination with Fe²⁺ ions Hole trapping at V^?_OH and V^?_Al centers may occur as an intermediate step Bleaching with 514 5-nm Ar⁺ laser light is reversible upon exposure to u v radiation Present data are compared with those obtained previously on the thermoluminescence of irradiated MgO crystals.     

Kinetics of nonequilibrium processes excited in broad-band dielectrics by synchrotron radiation

Luminescence spectroscopy with subnanosecond time resolution is used to study features of nonequilibrium processes excited in several broad-zone dielectrics (mainly inorganic scintillators) by pulses of synchrotron radiation (SR). When excitation density exceeds a certain level, which is different for each material, there is an abrupt change in the kinetics of relaxation of the nonequilibrium states. This change is accompanied by nonuniform broadening or shortwave shifting of the luminescence spectrum and a drop in quantum light yield. The decay time for natural luminescence decreases by 1–3 orders, to nanoseconds, and is independent of temperature within the range 80–450 K. The build-up stage disappears in the kinetics of luminescence of Ce³⁺-centers and decay time is reduced by a factor of 2–4. Density effects are found to be independent of the conditions under which the material is exposed to SR. A model is proposed in which density effects are related to nonradiative energy transfer from the upper excited states of the luminescence centers to external quenching centers. The contribution of the space charge induced by SR is also examined. Ural State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 120–135, November, 1996.     

Highly nonlinear fundamental mechanisms of excitation and coloring of wide-gap crystals by intense femtosecond laser pulses

Analysis of the spatial distribution of the color centers formed in wide-gap LiF and MgF₂ crystals in a laser beam channel has shown that these centers are formed in numerous longitudinal filaments into which a laser beam splits when propagating in a medium. The luminescence of the produced color centers is photoluminescence, which is excited by the supercontinuum radiation in the filaments.     

多孔硅蓝光发射与发光机制

在制备出光致发光能量为２．７ｅＶ的发射蓝光多孔硅的基础上对它进行了较系统的研究：测量了它的光致发光时间分辨光谱，用傅里叶交换红外光谱分析了其表面吸附原子的局域振动模，研究了γ射线辐照对其发光的影响，并与发红、黄光的多孔硅作了对比，通过空气中长期存放、激光和紫外线照射的方法，研究了光致发光峰能量为２．７ｅＶ的多孔硅发光稳定性．我们及其它文献中报道的多孔硅蓝光发射的实验结果与量子限制模型矛盾，但能用量子限制／发光中心模型解释．我们认为多孔硅的２．７ｅＶ发光是多孔硅中包裹纳米硅的ＳｉＯ_x层中某种特征发光中心引起的． 关键词：     

Nonlinear light absorption and luminescence in silicate glasses

The study of luminescence of high-purity multicomponent silicate glasses excited by radiation of a N₂ laser (λ=337 nm, P≈12kW) showed darkening of a sample and a monotone decrease in luminescence intensity and the transmitted radiation intensity from pulse to pulse. Additional illumination with radiation of an Ar⁺ laser (λ=514.5 nm) caused an increase in luminescence intensity. An increase in absorption and a decrease in luminescence intensity were found to be caused by two-photon absorption and electron-hole pair production.     

Polarization dependence of luminescence induced by two-photon excitation in LiF crystals with F 3 + laser color centers and the symmetry of the excited state

The energy level structure of F ₃ ⁺ laser color centers in crystals of LiF is discussed. A high-power laser (λ _ex=920 nm) is used to excite luminescence from LiF crystals with F ₃ ⁺ centers via two-photon absorption, and the dependence of the polarization and intensity of this luminescence on the polarization of the laser light is measured and calculated. It is shown that the two-photon transition involves the excitation of a previously unknown state of the F ₃ ⁺ center—a spin singlet whose wave function has ¹ A ₁ symmetry. Fiz. Tverd. Tela (St. Petersburg) 39, 1373–1379 (August 1996)     

Study of polarized luminescence in erbium-doped laser glasses

A partial polarization of luminescence in laser phosphate and silicate erbium-doped glasses was found to take place for the fundamental laser transition ⁴ I _13/2→⁴ I _15/2 (λ=1.55 μm) under excitation by linearly polarized laser radiation (532 and 790–990 nm). The shape of the luminescence spectrum depends on the wavelength of the exciting light and on the composition of the glass matrix. The degree of polarization of the luminescence depends on the spectral range of both the excitation and the detection, attaining a maximum of ～1%. The concentration dependence of the degree of polarization is studied.     

Exciton luminescence of YAlO<Subscript>3</Subscript> single crystals and single-crystal films

The paper reports on a study of exciton luminescence in single crystals (SCs) and single-crystal films (SCFs) of YAlO₃, which have substantially different concentrations of vacancy-type and substitutional defects, under excitation by synchrotron radiation near the fundamental absorption edge. The radiative annihilation of excitons in SCFs was shown to occur primarily at regular perovskite lattice sites and to be accompanied by luminescence in a band peaking at λ_max = 295 nm with τ = 5.2 ns. In contrast to SCFs, the radiative exciton decay in YAlO₃ SCs takes place predominantly near vacancy-type defects (F⁺ and F centers) and is accompanied by luminescence in the bands at λ_max = 350 nm (τ = 2.5 ns) and 440 nm (τ₁ = 1.9 ns, τ₂ = 30 ms). Photoexcitation in the 175-nm band of YAlO₃ SCs revealed photoconversion of the centers F → F⁺.     

Luminescence spectroscopy of excitons and antisite defects in Lu3Al5O12 single crystals and single-crystal films

The nature of the intrinsic luminescence of the lutetium aluminum garnet Lu₃Al₅O₁₂ (LuAG) has been analyzed on the basis of time-resolved spectral kinetic investigations upon excitation of two model objects, LuAG single crystals and single-crystal films, by pulsed X-ray and synchrotron radiations. Due to the differences in the mechanisms and methods of crystallization, these objects are characterized by significantly different concentrations of Lu_Al antisite defects. The energy structure of luminescence centers in LuAG single crystals (self-trapped excitons (STEs), excitons localized near antisite defects, and Lu_Al antisite defects) has been established. For single-crystal LuAG films, grown by liquid-phase epitaxy from a Pb-containing flux, the energy parameters of the following luminescence centers have been determined: STEs in regular (unperturbed by the presence of antisite defects) sites of the garnet lattice and excitons localized near Pb²⁺ ions. The structure of the luminescence centers, related to the background emission of impurity Pb²⁺ ions, has also been established in the UV and visible ranges. It is suggested that, in contrast to the two-halide hole self-trapping, a self-trapped state similar to STEs in simple oxides (Al₂O₃, Y₂O₃) is formed in LuAG; this state is formed by self-trapped holes in the form of singly charged O^? ions and electrons localized at excited levels of Lu³⁺ cations.     

Decay Time of 2.09 eV Luminescence of S2--Vacancy Centers and Their Optical and Thermal Stability in NaCl:S2 Crystals

An investigation was carried out on decay time of the 2.09 eV emission of S²–vacancy pair centers in NaCl crystals. When the crystal was excited by a pulsed 337 nm light from an N₂ laser, the 2.09 eV yellow luminescence principally decayed with the lifetime of 14.2 μs at low temperatures, and exhibited a weak thermal quenching with an activation energy of 51.3 meV above about 150 K. Such S^2--vacancy pair centers responsible for the 2.09 eV luminescence were thermally stable at room temperature, and not bleached even when exposed to ultraviolet lights below about 5 eV. Thus, the 2.09 eV emission center possibly can be used as a solid-state laser active center working at room temperature.     

Two-photon polarization spectroscopy of LiF crystals with F 2 laser color centers

The paper reports on a measurement and calculation of the dependence of LiF: F ₂ luminescence polarization and intensity on the polarization of high-power laser radiation (λ_ex=1064 nm) producing two-photon excitation of F ₂ centers. It is shown that the two-photon transition results in the excitation of a previously unknown electronic level of F ₂ centers of the A _1g symmetry.     

Recombination processes in europium-doped cadmium iodide crystals

Results of comprehensive research into optical and luminescent-kinetic characteristics of europium-doped cadmium iodide crystals excited by nitrogen laser radiation, α-particles, and x-rays are presented. Crystals under study have been grown by the Bridgman–Stockbarger method. The doping EuCl₃ admixture was introduced into the charge in quantities of about 0.05 and 1.0 mol%. Impurity absorption detected in the near-edge region of the crystals is interpreted as part of the Eu²⁺ ion long-wavelength band associated with f–d-transitions. The cation impurity and matrix defects in CdI₂:Eu²⁺ crystals create complex centers responsible for emission with a maximum in the 580–600-nm region. The short component in the luminescence decay kinetics of weakly-doped crystal excited by α-particles and x-ray photons is due to the exciton emission characteristic of CdI₂. The slow component in the scintillation pulse results from recombination of charge carriers followed by creation of exciton-like states on the defect-impurity centers. Laser or x-ray excitation induces light-sum accumulation on the trapping levels at a depth of 0.2–0.6 eV that is mainly related to matrix microdefects. Trapping centers associated with the chlorine impurity are observed in the heavily-doped crystal. Photostimulated luminescence at 85 K arising at the electron stage of the recombination process is caused by recombination of electrons released from F-type centers with holes localized near the activator. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 76, No. 3, pp. 358–364, May–June, 2009.     

Photoluminescence of colloidal YVO4:Eu/SiO2 core/shell nanocrystals

YVO₄:Eu, and YVO₄:Eu/SiO₂ nanocrystals (NCs) were prepared by hydrothermal method with citrate as capping ligands. Their morphologies, structures, components, and photoluminescence properties were investigated and presented in this paper. A remarkable fluorescence enhancement up to 2.17 times was observed in colloidal YVO₄:Eu/SiO₂ NCs, compared to that of colloidal YVO₄:Eu NCs. This is mainly attributed to the formation of the outer protecting layers of biocompatible SiO₂ shells; which shield the Eu³⁺ ions effectively from water and thus reduces the deleterious effects of water on the luminescence. Meanwhile, on the basis of laser selective excitation, two kinds of luminescent centers were confirmed in the NCs, namely, inner Eu³⁺ ions and surface Eu³⁺ ions. The surface modifications for YVO₄:Eu NCs effectively reduced the surface defects and accordingly enhanced the luminescence. The core/shell NCs exhibited long fluorescence lifetime and high photostability under ultraviolet radiation.     

Luminescence and scintillation properties of Y<Subscript>3</Subscript>A<Subscript>l5</Subscript>O<Subscript>12</Subscript>:Ce single crystals and single-crystal films

Luminescence and scintillation properties of Y₃A_l5O₁₂:Ce single crystals grown from the melt by the Czochralski and horizontal directed crystallization methods in various gas media and Y₃A_l5O₁₂:Ce single-crystal films grown by liquid-phase epitaxy from a melt solution based on a PbO-B₂O₃ flux have been comparatively analyzed. The strong dependence of scintillation properties of Y₃A_l5O₁₂:Ce single crystals on their growth conditions and concentrations of Y_Al antisite defects and vacancy defects has been established. Vacancy defects are involved in Ce³⁺ ion emission excitation as the centers of intrinsic UV luminescence and trapping centers. It has been shown that Y₃A_l5O₁₂:Ce single-crystal films are characterized by faster scintillation decay kinetics than single crystals and a lower content of slow components in Ce³⁺ ion luminescence decay during high-energy excitation due to the absence of Y_Al antisite defects in them and low concentration of vacancy defects. At the same time, the light yield of Y₃A_l5O₁₂:Ce single-crystal films is comparable to that of single crystals grown by directed crystallization due to the quenching effect of the Pb²⁺ ion impurity as a flux component and is slightly lower (∼25%) than the light yield of single crystals grown by the Czochralski method.     

Time-resolved luminescent spectroscopy of YAG:Ce single crystal and single crystalline films

The peculiarities of the luminescence and energy transfer from YAG host to the emission centers formed by the Y_Al antisite defects and Ce³⁺ ions have been studied in YAG:Ce single crystals, grown from the melt by modified Bridgman method in Ar and CO₂ + H₂ atmospheres, and YAG:Ce single crystalline film, grown by liquid phase epitaxy method, using the comparative time-resolved luminescent spectroscopy under excitation by synchrotron radiation in the range of fundamental adsorption of this garnet.     

Luminescence centers generated by chromium ions in potassium-aluminum (indium) diphosphates

Crystals of potassium-aluminum (indium) diphosphates KMeP₂O₇ (Me = Al, In) doped by chromium ions are synthesized for the first time, and their main spectral luminescence properties are described. The luminescence of these crystals is studied in the temperature range 4.2–300 K under excitation by light with a wavelength of 270–650 nm. The luminescence spectrum has two wide bands in the ranges 450–650 nm (“green” photoluminescence) and 700–800 nm (“red” photoluminescence). The green photoluminescence band is assumed to be a superposition of the intrinsic radiation of the matrix and the radiation of molecular centers generated by chromium ions that are surrounded by four oxygen atoms. At low temperatures, the red photoluminescence band consists of a wide unstructured band and narrow lines on its short-wavelength wing and is associated with the radiation of Cr³⁺ ions that replace Al³⁺ matrix ions and are in an octahedral oxygen environment. Parameters of the electron energy level diagram of the Cr³⁺ ion in the matrices of the investigated crystals are determined.     

Effect of point defects on luminescence characteristics of ZnO ceramics

Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V_O are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.     

Photoinduced transformation of luminescence centers in C60 crystals at high pressure

The influence of laser irradiation on the photoluminescence spectra of perfect C₆₀ crystals in the orientationally disordered phase is investigated. It is shown that irradiation of the crystals with low-power light for short durations at T=200 K produces radical changes in the luminescence spectrum. The pressure dependences of the spectral bands of the phototransformed and initial (without irradiation) spectra differ significantly, indicating a photoinduced structural transformation of the X centers responsible for the luminescence of C₆₀. The phototransformed C₆₀ crystals are stable against further exposure to light irradiation and pressure. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 12, 784–788 (25 December 1999) Deceased.