Pulsed laser operation of Y b-dope d KY(WO(4))(2) and KGd(WO(4))(2)

Spectroscopic properties and laser performance of Y b-doped tungstates at pulsed Ti:sapphire laser pumping are reported. Room-temperature lasing near 1025nm is demonstrated in Yb:KY(WO(4))(2) and Yb:KGd(WO(4))(2), with a slope efficiency as great as 86.9%.     

Diode-pumped Kerr-lens mode-locked Yb:KY(WO(4))(2) laser

A self-starting Kerr-lens mode-locked Yb:KY(WO(4))(2) laser directly end pumped by two 1.6-W diodes is demonstrated for what is to our knowledge the first time. Pulses as short as 71 fs with 120-mW average output power, at a center wavelength of 1057 nm, were obtained at a repetition rate of 110 MHz. A 10-nm tuning range was achieved with longer pulses and higher average output power.     

Directly diode-pumped Yb:KY(WO(4))(2) regenerative amplifiers

Two Yb(3+) -doped KY(WO(4))(2) regenerative amplifiers, one end pumped by two 1.6-W single-stripe diodes at 940 nm and the other side pumped by one 20-W diode bar at 980 nm, are demonstrated. When the regenerative amplifiers are injected, 40-muJ , 400-fs and 65-muJ , 460-fs pulses at a 1-kHz repetition rate are obtained following compression from the end- and side-pumped amplifiers, respectively.     

240-fs pulses with 22-W average power from a mode-locked thin-disk Yb:KY(WO(4))(2) laser

We demonstrate what is to our knowledge the first passively mode-locked thin-disk Yb:KY(WO(4))(2) laser. The laser produces pulses of 240-fs duration with an average power of 22 W at a center wavelength of 1028 nm. At a pulse repetition rate of 25 MHz, the pulse energy is 0.9microJ , and the peak power is as high as 3.3 MW. The beam quality is very close to the diffraction limit, with M(2)=1.1 .     

Nd∶KY(WO4)2和Nd∶KG(WO4)2晶体吸收光谱性能分析

通过研究分析钨酸盐晶体Nd∶KY(WO₄)₂和Nd∶KG(WO₄)₂在室温下的吸收光谱，发现这2种晶体具有作为激光晶体的优良特性。根据Judd-Ofelt理论和测试所得的吸收光谱及数据，用VC++编程计算出晶体的谱线强度、振子强度、吸收截面等，拟合得Nd³⁺离子的3个晶场调节参数Ω_λ(λ=2，4，6)的值，并从理论上计算了自发跃迁几率、能级寿命、荧光分支比和积分发射截面。从计算得出的荧光分支比β可以看出，Nd∶KY(WO₄)₂(β_1060nm=0.4380)和Nd∶KG(WO₄)₂(β_1060nm=0.4618)晶体荧光分支比都较大，计算了该晶体的X=Ω₄/Ω₆，并将其X值与其他晶体的X值加以比较，Nd∶KY(WO₄)₂和Nd∶KG(WO₄)₂均易于实现1.06μm激光输出，适合作为LD泵浦的钨酸盐晶体激光器。     

Yb-doped KY(WO4)2 planar waveguide laser

High-quality monoclinic KY(WO4)2 optical waveguides were grown by liquid-phase epitaxy, and laser operation of an Yb-doped KY(WO4)2 waveguide was demonstrated for the first time to our knowledge. Continuous-wave laser emission near 1 microm was achieved with both surface and buried planar waveguides. An output power of 290 mW was obtained in the fundamental mode and the slope efficiency was above 80%.     

High-peak-power pulses from a cavity-dumped Yb:KY(WO4)2 oscillator

We report generation of 1.35 microJ femtosecond laser pulses with a peak power of 3 MW at 1 MHz repetition rate from a diode-pumped Yb:KY(WO4)2 laser oscillator with cavity dumping. By extracavity compression with a large-mode-area fiber and a prism sequence, we generate ultrashort pulses with a duration of 21 fs and a peak power of 13 MW.     

Thin-disk Yb:KLu(WO(4))(2) laser with single-pass pumping

Single-pass pumping of a thin disk consisting of an only 50 microm thick epitaxial layer of 32 at.% Yb-doped KLu(WO(4))(2) grown on a 0.35 mm thick undoped KLu(WO(4))(2) substrate is demonstrated. The thin-disk laser delivered 9 W of continuous wave output power near 1030 nm with a slope efficiency of 77%.     

Highly efficient 1 GHz repetition-frequency femtosecond Yb3+:KY(WO4)2 laser

We present a highly efficient, diode-pumped, femtosecond Yb3+:KY(WO4)2 (Yb:KYW) laser operating at a 1.024 GHz repetition rate. The output was centered at a wavelength of 1042 nm and had a bandwidth of 3.8 nm, leading to transform-limited pulses with durations of 278 fs determined by fringe-resolved autocorrelation measurements. The optical-to-optical conversion efficiency and slope efficiency were 61% and 69%, respectively, and the relative intensity noise was <0.1%.     

Diode-pumped passively mode-locked Nd:KGd(WO(4))(2) laser with 1-W average output power

Continuous-wave passive mode locking of a diode-pumped Nd:KGd(WO(4))(2) laser is demonstrated. The use of a saturable Bragg reflector as the mode-locking element permits the generation of 6.3-ps pulses, assuming a sech(2) pulse shape. An output power of 1 W was obtained, which corresponds to a slope efficiency of 34.5%.     

Efficient femtosecond green-light source with a diode-pumped mode-locked Yb3+:KY(WO4)2 laser

Efficient generation of femtosecond pulses at 524 nm is demonstrated by the extracavity frequency doubling of the output of a diode-pumped femtosecond Yb3+:KY(WO4)2 laser using a periodically poled LiTaO3 crystal. An average second-harmonic power of 120 mW is produced at an internal conversion efficiency of 40%. The temporal characteristics of the frequency-doubled pulses as a function of focusing conditions in a thick nonlinear crystal are investigated experimentally, and pulses as short as 225 fs are generated at a pulse repetition frequency of 86 MHz.     

Passive Q switching and self-frequency Raman conversion in a diode-pumped Yb:KGd(WO(4))(2) laser

We report on the laser performance of a diode-pumped Yb:KGd(WO(4))(2) laser that is passively Q switched with a Cr(4+):YAG saturable absorber. Raman conversion of fundamental laser emission in the laser crystal was demonstrated. Q-switched 3.4-mu;J pulses with a pulse width of 85 ns were obtained at the 1033-nm fundamental wavelength and 0.4-mu;J pulses with a pulse width of 20 ns were produced in a first Stokes at 1139 nm.     

Multifrequency parametric infrared Raman generation in KGd(WO(4))(2) crystal with biharmonic ultrashort-pulse pumping

Mutlifrequency parametric Raman generation was carried out in a KGd(WO(4))(2) crystal by use of a dual-wavelength Ti:sapphire laser system. It was found that with femtosecond pump pulses the efficiency of Raman generation is low because of the onset of self-phase modulation. The mechanism for suppression of stimulated Raman scattering by self-phase modulation is discussed. Employing 2-ps-long chirped pulses generated four Stokes and one anti-Stokes component.     

Diode-pumped femtosecond Yb:KGd(WO(4))(2) laser with 1.1-W average power

We demonstrate what is to our knowledge the first mode-locked Yb:KGd(WO(4))(2) laser. Using a semiconductor saturable-absorber mirror for passive mode locking, we obtain pulses of 176-fs duration with an average power of 1.1 W and a peak power of 64 kW at a center wavelength of 1037 nm. We achieve pulses as short as 112 fs at a lower output power. The laser is based on a standard delta cavity and pumped by two high-brightness laser diodes, making the whole system very simple and compact. Tuning the laser by means of a knife-edge results in mode-locked pulses within a wavelength range from 1032 to 1054 nm. In cw operation, we achieve output powers as high as 1.3 W.     

Vibrational properties of RbNd(WO4)2: high pressure Raman study, structural and phonon calculations

RbNd(WO(4))(2) was investigated by high pressure Raman spectroscopy in the 0.1-12.3 GPa pressure interval. The assignment of modes was made based on lattice dynamics calculations and the results of these calculations helped us to also discuss the high pressure behavior of phonon spectra in this material. Our results show that a double oxygen bridge plays a fundamental role in the vibrational properties of this system. A density functional theory (DFT) calculation of hydrostatic pressure effects on RbNd(WO(4))(2) was performed in order to understand the effect of internal bond changes on the vibrational properties of RbNd(WO(4))(2). No pressure induced structural phase transition was observed in the Raman study at room temperature, and the DFT calculation (T = 0 K) is consistent with this result. The anomalous softening of the bridge stretching mode at 770 cm(-1) was attributed to the decrease of W-O1-W bond angle with increasing pressure.     

Efficient thin-disk Tm-laser operation based on Tm:KLu(WO4)2/KLu(WO4)2 epitaxies

A diode-pumped thin-disk laser based on Tm:KLu(WO4)2/KLu(WO4)2 epitaxies is realized. The emission is in the 1850-1945 nm spectral range for Tm-doping between 5 and 15 at. %. The maximum slope efficiency of 47% with respect to the absorbed power obtained with 5 at. % Tm:KLu(WO4)2/KLu(WO4)2 corresponds to a maximum output power of ~6 W in cw operation.     

Spectroscopic characterization and laser performance of resonantly diode-pumped Er(3+)-doped disordered NaY(WO4)2

We report what is believed to be the first resonantly pumped laser operation based on Er(3+)-doped disordered double tungstate single crystal. Efficient laser operation of an Er(3+):NaY(WO(4))(2) laser at ～1609.6 nm was demonstrated with the naturally wideband, ～20 nm, InGaAsP/InP laser diode pumping at ～1501 nm. Laser wavelength tunability of ～34 nm was also demonstrated based on disorder-broadened emission features of Er(3+):NaY(WO(4))(2) single crystal.     

Efficient passively Q-switched laser operation of Yb in the disordered NaGd(WO4)2 crystal host

Efficient passively Q-switched laser operation of the disordered Yb:NaGd(WO(4))(2) crystal is demonstrated for the first time to our knowledge with a Cr(4+):YAG saturable absorber by diode end pumping. 2.05 W of average output power at a pulse repetition frequency of 13.3 kHz was obtained at an absorbed pump power of 7.7 W, with a slope efficiency of 40%. The energy and duration of the generated laser pulse were 154 microJ and 33 ns, respectively, corresponding to a peak power of 4.67 kW. In continuous-wave operation, the Yb:NaGd(WO(4))(2) laser yielded an output power of 5.5 W with an optical-optical efficiency of 51%.     

Ybx:KY1-x(WO4)2晶体生长及振动光谱研究

采用TSSG法生长出Ybx:KY1-xW(x=0.05)和KYbW晶体,并对两者的结构和光谱性能进行了比较。工艺参数为,转速10～15r.min-1,拉速1～2mm.d-1,生长周期10～15d,降温生长速率0.05～0.1℃.h-1,降温速率20℃.h-1。XRD分析表明两者均为低温相的β-KYW结构,两种晶体的晶格常数分别为a1=1.063nm,b1=1.034nm,c1=0.755nm,β1=130.75°,Z1=4和a2=1.061nm,b2=1.029nm,c2=0.749nm,β2=130.65°,Z2=4。测试了红外及拉曼光谱,Ybx:KY1-xW(x=0.05)样品在925,891,840,777,749cm-1具有较强的红外吸收峰,是由WO4原子基团伸缩振动引起的;KYbW样品在484和437cm-1处具有较强的红外吸收峰,反映了WO4原子基团的弯曲振动。分析了晶体的振动模式,认为两种晶体有较强的拉曼活性,钨氧双桥键WOOW和单桥键WOW基团的振动在200～1000cm-1范围内,对峰值与相应的振动进行了指认。     

Mode-locked laser operation of epitaxially grown Yb:Klu(WO4)2 composites

Mode locking based on an epitaxial composite of the monoclinic double tungstate crystal Yb:KLu(WO4)2 is realized. A 100 microm thin Yb:KLu(WO4)2 layer grown on a KLu(WO4)2 substrate is used as an active medium in a laser passively mode locked by a semiconductor saturable absorber. Pulse durations of 114 fs have been achieved for an average power of 31 mW at 1030 nm. Results in the femtosecond and picosecond regimes of the Yb:KLu(WO4)2/KLu(WO4)2 laser are presented. The great potential of Yb-doped tungstate composite structures as active elements for mode-locked laser systems is demonstrated.