Effect of electron–phonon interaction on the energy spectrum of a quantum antidot in the presence of a uniform strong magnetic field

We have studied the effect of electron–phonon interaction for small electron–phonon coupling on the electronic energy spectrum of an electron confined by a parabolic potential and a repulsive antidot potential in the presence of a uniform strong magnetic field and an Aharonov–Bohm flux field by using a variational procedure. We have shown that the presence of the antidot potential removes degeneracy of the Landau levels and electron–phonon interaction has nonnegligible effects on these levels.     

Energy loss rate of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures

Energy loss rates of two-dimensional electron gas in GaInAs/AlInAs, InSb/AlInSb and GaSb/AlGaAsSb heterostructures are theoretically investigated over a wide range of temperature based on the electron–one-phonon and electron–two-phonon interactions. Calculations are presented for electron acoustic one-phonon interaction via deformation potential and piezoelectric coupling and electron–LO phonon interaction with hot phonon effect. In addition, energy loss rate due to electron-two-zone edge transverse acoustic (TA) phonons is also presented. A very good agreement is obtained between the calculations and experimental data in GaInAs/AlInAs structure with the inclusion of electron–two-zone edge TA phonon interaction. In all these three structures energy loss is dominated by (i) acoustic one-phonon scattering at low temperatures, (ii) two-TA zone edge phonons at intermediate temperatures and (iii) LO phonons at high temperatures. It is observed that, hot phonon effect reduces the energy loss rate considerably in these structures.     

Electron–phonon-induced spin relaxation in InAs quantum dots

We have calculated spin-relaxation rates in parabolic quantum dots due to the phonon modulation of the spin–orbit interaction in the presence of an external magnetic field. Both deformation potential and piezoelectric electron–phonon coupling mechanisms are included within the Pavlov–Firsov spin–phonon Hamiltonian. Our results have demonstrated that, in narrow gap materials, the electron–phonon deformation potential and piezoelectric coupling give comparable contributions to spin-relaxation processes. For large dots, the deformation potential interaction becomes dominant. This behavior is not observed in wide or intermediate gap semiconductors, where the piezoelectric coupling, in general, governs the spin-relaxation processes. We have also demonstrated that spin-relaxation rates are particularly sensitive to the Landé g-factor.     

Electron and phonon relaxation in metal films perturbed by a femtosecond laser pulse

A theoretical investigation of the electron and phonon time-dependent distributions in an Ag film subjected to a femtosecond laser pulse has been carried out. A system of two coupled time-dependent Boltzmann equations, describing electron and phonon dynamics, has been numerically solved. In the electron Boltzmann equation, electron–electron and electron–phonon collision integrals are considered together with a source term for laser perturbation. In the phonon Boltzmann equation, only electron–phonon collisions are considered, neglecting laser perturbation and phonon–phonon collisions. Screening of the interactions has been accounted for in both the electron–electron and the electron–phonon collisions. The results show the simultaneous electron and phonon time-dependent distributions from the initial non-equilibrium behaviour up to the establishment of a new final equilibrium condition. PACS 72.10.-d; 71.10.Ca; 63.20.Kr     

On surface plasmon damping in metallic nanoparticles

Two possible mechanisms of damping of surface plasmon (SP) oscillations in metallic nanoparticles (MNPs), not connected with the electron–phonon interaction, are investigated theoretically: (a) radiation damping of SPs and (b) resonant coupling of SP oscillations with electronic transitions in the matrix. For the mechanism (a) it is shown that the radiation damping rate is proportional to the number of electrons in a MNP and therefore this channel of energy outflow from the MNP becomes essential for relatively large particles. The strong frequency and size dependence of the radiation damping rate obtained allows us to separate the contributions of radiative processes and the electron–phonon interaction to the energy leakage. The investigation of the mechanism (b) shows that the rate of energy leakage of SP oscillations from a MNP does not depend on particle size and is fully determined by the optical characteristics of the matrix. It is demonstrated that for very small MNPs of -–3 5nm size, where the strong three-dimensional size quantization effect suppresses the electron–phonon interaction, the resonance coupling in certain cases provides an effective energy outflow. PACS 78.67.Bf     

Polaronic effects due to surface optical vibration modes in a freestanding cylindrical wurtzite nanowire

The ground-state polaron self-trapped energy and effective mass due to the surface optical (SO) phonon modes in a freestanding wurtzite GaN nanowire (NW) were studied by means of the Lee–Low–Pines variational approach. Based on the dielectric continuum and Loudon’s uniaxial crystal models, the polar optical phonon modes in the one-dimensional (1D) systems are analyzed, and the vibrating spectra of SO modes and electron–SO phonon coupling functions are discussed and analyzed. The calculations on the ground-state polaron self-trapped energy and correction of effective mass due to the SO phonon modes in the 1D GaN NWs reveal that the polaron self-trapped energy and correction of effective mass are far larger than those in 1D GaAs NW systems. The reasons resulting in this obvious difference in the two 1D structures are mainly due to the different electron–phonon coupling constants and electron effective masses of bulk materials constituting the two types of 1D confined system. Finally, the polaronic properties of the wurtzite 1D GaN NWs have been compared with those of the wurtzite GaN-based two-dimensional quantum wells. The physical origination of these characteristics and their distinction in the different-dimensionality systems has been analyzed in depth.     

Influence of the quantum dot shape on the determination of the electronic structure and electron decoherence

Theoretical calculations of electron–phonon scattering rates in AlGaN/GaN quantum dots (QDs) have been performed by means of effective mass approximation in the frame of finite element method. The influence of a symmetry breaking of the carrier's wave function on the electron dephasing time is investigated for various QDs shapes. In a QD system the electron energy increases when the QD shape changes from a spherical to a non-spherical form. In addition, the influence of the QD shape upon the electronic structure can be modulated by external magnetic fields. We also show that the electron–acoustic phonon scattering rates strongly depend upon both the QD shape and the applied magnetic field. As an additional parameter, the QD shape can be used to modify the electron–acoustic phonon interaction in a wide range. Moreover, the scattering rate of different transitions, such as Δm=0(1), presents distinct magnetic field dependency.     

IR-poled second-harmonic generation in glass

Infrared (IR)-induced second-harmonic generation in the chalcogenide glasses is observed. A phenomenological approach of IR picosecond non-linear optical (NLO) response in glass is developed for the middle IR spectral range (5–15 μm). The observed effect is explained within the framework of fifth-order NLO susceptibilities. A model that reproduces the basic characteristics of the experimental data, in which the optical non-linearities caused by photoinduced electron–phonon anharmonic interactions, is proposed. The role of the IR-induced phase matching conditions in the observed phenomenon is discussed.     

Electron–Phonon Interaction and Quantum Fluctuations in the Time-Dependent Damped Capacitance-Coupled Electric Circuit

Starting from the electron–phonon interaction, the time-dependent capacitance-coupled electric circuit is quantized. Quantum fluctuations derived by this method are different from former ones.     

Theoretical analysis of higher-order phonon sidebands in semiconductor luminescence spectra

A semiconductor luminescence formula is derived that includes phonon replica of arbitrary order based on a non-perturbative treatment of the electron–phonon interaction. The formula is used to analyze the extraordinarily strong sidebands observed with ZnO nanorods in recent experiments. Sidebands due to free and impurity-bound excitons are compared, and the generic differences between bulk and quantum-well emission are discussed.     

The Contours of the Bands of the Structural Luminescence and Absorption Spectra of Solid Solutions and Crystals of Uranyl Compounds at Low Temperatures

Temperature evolution of the fine structure of the electronic spectra of uranyl nitrates and fluorides is considered. It is shown that for pure crystals at T = 4.2 K the contour is described by the Lorentz curve; for other cases a convolution of the type of the Voigt function is typical. Weak electron–phonon interaction leads to temperature broadening of spectra predominantly due to the Boltzmann change in the population of the initial electronic–vibrational states.     

Effect of boundaries and impurities on electron–phonon dephasing

Electron scattering from boundaries and impurities destroys the single-particle picture of the electron–phonon interaction. We show that quantum interference between ‘pure‘ electron–phonon and electron–boundary/impurity scattering may result in the reduction as well as to the significant enlargement of the electron dephasing rate. This effect crucially depends on the extent, to which electron scatterers, such as boundaries and impurities, are dragged by phonons. Static and vibrating scatterers are described by two dimensionless parametersq_Tl and q_TL, where q is the wavevector of the thermal phonon, l is the total electron mean-free path, L is the mean-free path due to scattering from static scatterers. According to the Pippard ineffectiveness condition , without static scatterers the dephasing rate at low temperatures is slower by the factor 1 / ql than the rate in a pure bulk material. However, in the presence of static potential the dephasing rate turns out to be 1 / qL times faster. Thus, at low temperatures electron dephasing and energy relaxation may be controlled by electron boundary/impurity scattering in a wide range.     

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

We have studied the photoluminescence and time-resolved photoluminescence of a set of InGaN quantum wells with well thickness from 1 to 7.5 nm. An analysis of the phonon satellites at 5 K shows Huang–Rhys factors from 0.32 to 0.44. The increase of this factor is caused by the electron–hole separation induced by the piezoelectric field. The time-resolved photoluminescence at room temperature shows that the decay time of the 1 and 2 nm wells does not depend on the wavelength. The maximum decay time is around 600 ps for the 2, 3 and 4 nm wells. However, for the 3 and 4 nm wells a decrease of the photoluminescence decay time is observed at the highest wavelengths. This suggest the onset of a non-radiative process in these samples. The optimum well width for efficient emission for these single quantum wells was found to be 2 nm.     

Phonon coupling effect upon transport in nanoscale polymers

In an environmental coupled polymer, a variation of the conductivity is evaluated, which results from the external electron–phonon interaction coupling with the internal one. A quantized current appears under the external phonon coupling. The resonant tunnelling in the nanoscale polymer driven by the internal electron–phonon interaction is enhanced by the external phonon coupling. In addition, the external electron–phonon interaction softens the stiffness of the polymer.     

Energy relaxation of magnetically confined electrons in quantum cascade lasers

By measuring the light emitted from a quantum cascade laser placed in a high magnetic field, we have investigated the energy relaxation of 0D magnetically confined electrons in the active quantum wells of the structure. The experiment consists of injecting electrons by tunnelling into one upper subband level and monitoring a resonant interaction with optical phonons produced by Landau tuning of subband energy levels. For this purpose, the upper level lifetime is probed by measuring the laser intensity as a function of magnetic field, under constant current bias values. Both the laser intensity and the bias voltage oscillate periodically with the reciprocal of the field. In addition, at high magnetic fields, the current threshold goes through deep minima at antiresonance values. The lifetime is then deduced and analyzed using the strong electron–phonon coupling scheme which is typically applied to quantum dots.     

Polaronic effects in a polar semiconductor quantum strip with transverse parabolic confinement

The effect of electron–phonon interaction on the ground and excited state energies of an electron in a polar quantum strip is studied by using a variational method. It is shown that polaronic effects are quite significant and also size-dependent if the effective width of the strip is reduced below a certain value. It is also shown that the longitudinal polaron effective mass is substantially renormalized even by the transverse confinement in a quantum strip.     

Improving performance of resonant tunneling devices in asymmetric structures

Based on the global coherent tunneling model, we present a self-consistent calculation and show that structural asymmetry of double barrier resonant tunneling structures (DBRTSs) significantly modifies the current–voltage characteristics compared to the symmetric structures. Within the framework of the dielectric continuum model, we further investigate the phonon-assisted tunneling (PAT) current in symmetric and asymmetric DBRTSs. Both the interface modes and the confined bulk-like longitudinal-optical phonons are considered. The results indicate that the four higher-frequency interface phonon modes (especially the one which has the largest electron–phonon interaction at either interface of the emitter barrier) dominate the PAT processes. We show that a suitably designed asymmetric structure can produce much larger peak current and absolute value of the negative differential conductivity than its commonly used symmetric counterpart.     

Influence of acoustic phonons on dephasing of free excitons in quantum wells

A theory of the dephasing rate of quasi-2D free excitons due to acoustic phonon interaction at low exciton densities is presented. Both deformation potential and piezoelectric couplings are considered for the exciton–phonon interaction in quantum wells. Using the derived interaction Hamiltonian obtained recently by us, exciton linewidth and dephasing rate are calculated as a function of the exciton density, exciton temperature, exciton momentum and lattice temperature.     

Electronic structure and dynamics of optically excited single-wall carbon nanotubes

We have studied the electronic structure and charge-carrier dynamics of individual single-wall carbon nanotubes (SWNTs) and nanotube ropes using optical and electron–spectroscopic techniques. The electronic structure of semiconducting SWNTs in the band-gap region is analyzed using near-infrared absorption spectroscopy. A semi-empirical expression for E₁₁^S transition energies, based on tight-binding calculations is found to give striking agreement with experimental data. Time-resolved PL from dispersed SWNT-micelles shows a decay with a time constant of about 15 ps. Using time-resolved photoemission we also find that the electron–phonon (e–ph) coupling in metallic tubes is characterized by a very small e–ph mass-enhancement of 0.0004. Ultrafast electron–electron scattering of photo-excited carriers in nanotube ropes is finally found to lead to internal thermalization of the electronic system within about 200 fs. PACS 78.47.+p; 81.07.De; 78.67.Ch; 87.64.Ni