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1.
Eu3+扩散钨酸铅晶体(PbWO4)光学性能研究   总被引:1,自引:0,他引:1  
利用离子扩散法对下降法生长PbWO4晶体进行Eu3+扩散,通过透射光谱、荧光光谱、光产额和衰减时间的测试,研究了Eu3+扩散对PbWO4晶体的光学性能的影响.结果表明:Eu3+扩散PbWO4晶体可明显改善在350 nm波段的透过率,荧光光谱主峰为430 nm,且发光强度得到增强,在1000 ns的积分时间门宽内光产额为46 pe/MeV,衰减时间为6.5 ns.  相似文献   

2.
Bridgman法生长的大尺寸钨酸铅晶体的光学和闪烁性能   总被引:2,自引:0,他引:2  
本文报道了我们采用改进的Bridgman法为欧洲核子研究中心(CERN)大型强子对撞机(LHC)上的紧凑型μ子螺线管(CMS)实验生长的大尺寸掺Y3+钨酸铅闪烁晶体,给出了晶体的光学和闪烁性能,如光致发光谱、X射线致发光光谱、纵/横向的透射光谱、光产额以及辐照硬度.测试结果表明,掺Y2O3的钨酸铅晶体光产额很高(>13pe/MeV),且全为100ns以内的快发光,其辐照硬度已接近CMS电磁量能器(ECAL)端帽晶体的要求,同一批晶体彼此间的性能一致性好.  相似文献   

3.
PbWO4:(Sb,Y)晶体的发光和闪烁性能研究   总被引:1,自引:1,他引:0  
本文报道了用多坩埚下降法生长的大尺寸PbWO4:(Sb,Y)晶体的光谱和闪烁性能.基于透射光谱、X射线激发的发射谱、紫外激发及其发射谱、光产额和超短脉冲X射线激发荧光寿命等方面的测试,讨论了Sb,Y双掺杂对PbWO4晶体的光谱和闪烁性能的作用.结果表明:Sb,Y双掺杂能显著改善PbWO4晶体的光谱性能和闪烁性能,使PbWO4晶体在短波方向的透过率明显提高;对于尺寸为23×23×20mm3的掺杂晶体样品,光产额最大值大约为50 p.e./MeV,约为BGO光产额的6.0;;发光成份中有1.9ns和15.8ns两个衰减时间常数的快成份.  相似文献   

4.
高光产额钨酸铅(PbWO4)晶体的研究进展   总被引:5,自引:3,他引:2  
钨酸铅(PbWO4)晶体由于具有高密度、短辐照长度、高的辐照硬度和快发光等特点而成为目前最具发展潜力的闪烁晶体之一,但其光产额低的缺点限制了它在高能领域以外的应用.因此,提高钨酸铅晶体的光产额以使其在PET装置等低能领域获得应用已成为近年来钨酸铅晶体的研究热点.本文综述了高光产额钨酸铅晶体的研究现状,指出了目前存在的问题.结合理论分析,提出采用坩埚下降法晶体生长技术,离子掺杂和退火等措施是进一步提高钨酸铅晶体光产额的主要途径.  相似文献   

5.
本文报道了垂直梯度凝固法(VGF)生长PWO晶体的研究结果.通过优化工艺参数,成功获得直径25mm、长度140mm的PWO晶体.通过测试PWO晶体的XRD、透过光谱、荧光光谱等,研究了所得晶体的光学性能.结果表明:VGF法生长PWO晶体在350~420 nm处的光学透过率明显提高,荧光发光主峰位于435 nm,是快发光峰,但慢发光比例有所增加.  相似文献   

6.
采用提拉法生长了Cd:PbWO4晶体,最佳生长工艺参数:液面上和液面下轴向温度梯度分别为40~50 ℃/cm和17~25 ℃/cm,生长速度2~3 mm/h,转速为25~30 r/min,以这一条件生长晶体可克服液流转换,避免由此引起的缺陷.Cd:PbWO4的透过率明显高于各类型未掺杂PbWO4晶体,测得Cd:PbWO4的发光效率为21.2 p.e/MeV,而高纯PbWO4为10.5 p.e/MeV,分析纯退火PbWO4为8.2 p.e/MeV,未退火PbWO4为6.7 p.e/MeV.Cd:PbWO4晶体的平均衰减时间约为10 ns.以上结果表明,Cd:PbWO4是一种良好的闪烁晶体.  相似文献   

7.
Sb掺杂钨酸铅晶体中Sb的分布与闪烁特性研究   总被引:2,自引:2,他引:0  
研究了Bridgman法生长的Sb掺杂钨酸铅(PWO)晶体中Sb的分布和闪烁特性.晶体中Sb含量的测定表明,Sb在PWO晶体中的分凝系数约为0.63.由于Sb掺杂可以补偿PWO晶体的组分缺失而降低其中空位和一些色心的浓度,与未掺杂晶体相比较,Sb掺杂晶体具有更好的光学透过率和更高的发光强度.而且,在富氧气氛下退火后,Sb掺杂晶体的发光谱特征变化较小,仍能保持较高的快慢分量比.  相似文献   

8.
坩埚下降法生长钨酸镉晶体的闪烁性能   总被引:1,自引:0,他引:1  
以高温固相反应合成CdWO4多晶为原料,采用垂直坩埚下降法生长出大尺寸完整CdWO4晶体,就所生长CdWO4晶体进行了闪烁发光性能的测试表征,包括紫外可见透射光谱、光致发光光谱、光致发射衰减时间、X射线激发发射光谱、相对光产额以及γ射线辐照硬度.结果表明,该单晶在可见光区具有良好的光学透过性,其光致发光与X射线激发发射光的峰值波长位于475 nm左右,其光致发射衰减时间为842 ns;以CsI∶Tl晶体为基准样品,测得γ射线激发发光的光产额相当于基准样品的51.5%~57.4%,在γ射线辐照条件下其辐照硬度达107 rad.  相似文献   

9.
本文使用铱坩埚感应加热Czochralski法成功地生长出了无色透明且尺寸达φ50mm×60mm 的Lu2SiO5:e晶体.XRD结构分析表明, 该晶体为单斜结构.在室温下分别以X射线和紫外光为激发源测量了该晶体的发射光谱,获得的发射波长分别为403nm和420nm,光衰减时间为41ns,光产额达32000p/MeV.发射光谱的双峰结构以及晶体的发光特性证明其发光源于Ce3+离子的5d1→5F5/2 和 5d1→5F7/2跃迁.  相似文献   

10.
用提拉法生长出了直径45 mm的Lu3Al5O12:1; Pr(LuAG: Pr)石榴石闪烁晶体.测试了该晶体不同部位样品的吸收谱、激发发射光谱和多道能谱等.对晶体的吸收波段、发光峰位和激发波长及其对应的Pr离子中电子的跃迁能级进行了指认.测得LuAG: Pr晶体在137Cs放射源激发下的闪烁衰减时间为29 ns,光产额约为10800±540photons/MeV,光致发光衰减时间为21.93 ns.LuAG: Pr晶体样品的热释光(TSL)曲线证实晶体中存在较多的能够束缚电子的浅陷阱.  相似文献   

11.
Rakin  V. I. 《Crystallography Reports》2020,65(6):1033-1041
Crystallography Reports - The relationship of morphological spectra (sets of data on the morphological types of real polyhedral crystals and their probabilities under current physicochemical...  相似文献   

12.
A review of measurement of thermophysical properties of silicon melt   总被引:2,自引:0,他引:2  
Measurements of thermophysical properties of Si melt and supplementary study of X-ray scattering/diffraction by the authors' group were reviewed. The values obtained differed variously from those of literature. Density was 2–3% larger, surface tension 20–30% smaller, viscosity up to 40% larger, electrical conductivity 8% smaller, spectral emissivity more or less in good agreement with literature values, and thermal diffusivity a few percent larger. An anomalous density jump was found near the melting point. Surface tension and viscosity also showed anomaly. A strange time-dependent change of density was observed over 3 h after melting. X-ray analyses suggested a slight change in local atom ordering, but showed no sign of cluster formation. An addition of 0.1 at% gallium caused the density jump to disappear, while that of boron caused no change. An EXAFS study of the former melt indicated a strong interaction between Ga and Si atoms as if molecules of GaSi3 existed. The implications of the measured properties are a possibility of soft-turbulence in an Si melt in a relatively large crucible, a more complicated manner of intake of oxygen depleted molten Si from the free surface region to underneath the growing crystal, and a relaxation of the melt after melting arising from trapped gas species.  相似文献   

13.
Within the method of discrete modeling of packings, an algorithm of generation of possible crystal structures of heteromolecular compounds containing two or three molecules in the primitive unit cell, one of which has an arbitrary shape and the other (two others) has a shape close to spherical, is proposed. On the basis of this algorithm, a software package for personal computers is developed. This package has been approved for a number of compounds, investigated previously by X-ray diffraction analysis. The results of generation of structures of five compounds—four organic salts (with one or two spherical anions) and one solvate—are represented.  相似文献   

14.
The evolution of the geometric characteristics introduced by Pauling and their dependence on the specific features of the structure and chemical bonds have been considered. The values of the covalent and van der Waals radii are given as well as their relationships and mutual transitions.  相似文献   

15.
Crystallography Reports - Macroscopic jumps of plastic deformation (few percent in amplitude) on creep curves of aluminum–magnesium alloy, caused by a local effect of concentrated solution of...  相似文献   

16.
Two types of domain-wall equations are analyzed: the equations derived by the Sapriel method and the equations obtained by interface matching of the thermal-expansion tensor. It is shown that, for W-type domain walls, these methods yield the same equations. For W′-type domain walls, the equations obtained by different methods coincide for proper ferroelastics and differ for improper ferroelastics.  相似文献   

17.
I. Avramov 《Journal of Non》2011,357(22-23):3841-3846
The temperature dependence of viscosity of silicate melts is discussed in the framework of the Avramov–Milchev (AM) equation. The composition is described by means of two parameters: the molar fraction, x, and the “lubricant fraction”, l. The molar fraction is the sum of the molar parts xi of all oxides dissolved in SiO2, the molar fraction of the latter being 1 ? x. It is shown that, with sufficient precision, two of the parameters of the AM equation can be presented as unique functions of the molar fraction. On the other hand, x is not sufficient to determine properly the reference temperature Tr , at which viscosity is ηr = 1013 [dPa.s]. Therefore, additional parameter, “lubricant fraction” l, is introduced. For each of the components, li is a product of molar part xi and a specific dimensionless coefficient 0  ki  1 accounting for the specific contribution of this component to the increased mobility of the system. It is demonstrated that, for l > 0, the reference temperature is related to the “lubricant fraction” l through the reference temperature Tr,SiO2 of pure SiO2.  相似文献   

18.
19.
Crystal chemical characteristics of the α and β modifications of Zn2V2O7 are calculated based on in situ high-temperature X-ray measurements. The expansion of the structure is found to be strongly anisotropic up to the negative volumetric thermal expansion of the α-Zn2V2O7 unit cell in the temperature range of 300–600°С, α V =–17.94 × 10–6 1/K. The transformations of the “hard” and “soft” sublattices with an increase temperature and at the phase transition are considered in detail. It is shown that the negative volumetric thermal expansion of α-Zn2V2O7 is due to the degeneracy of the zigzag-like shape of zinc–oxygen columns at constant distances between their vertices.  相似文献   

20.
SAXS in situ experiments on the evolution of TMOS solutions during hydrolysis and polycondensation lead to power laws with scaling exponents ≈ 2. It is suggested that this could be the result of the polydispersity of the samples and that only an apparent fractal dimension can be obtained in this way. Kinetic studies tend to indicate that agglomeration in the sol is the result of a diffusion-controlled process.  相似文献   

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