GaInSb/GaSb量子阱结构的低温光致发光谱

ＧａＩｎＳｂ三元合金半导体可用于制作工作于１．５５～５．５μｍ波段范围的光电子器件．在光通讯方面,需要２．５５μｍ波长的激光器和接收器,ＧａＩｎＳｂ半导体合金无疑是一种可选的材料．此外,这种材料也可用于制作高速电子器件,与ＧａＡｓ基异质结构相比,Ｇａ...     

高功率808nm InGaAsP—GaAs分别限制结构的半导体激光器

介绍了研究分别限制结构ＩｎＧａＡｓＰ－ＧａＡｓ半导体激光器所得到的最新成果。利用引进的俄国技术，基于量子阱结构的ＩｎＧａＡｓＰ－ＧａＡｓ激光器，可用短时间液相外延技术制造。在ＧａＡｓ衬底上制成的ＩｎＧａＡｓＰ－ＧａＡｓ分别限制结构的激光器，主要参数如下：发射波入λ＝８０８ｎｍ，阈值电流密度Ｊ＝３００Ａ／ｃｍ＾２，对于条宽ω＝１００μｍ的激光器，连续功率为１－２Ｗ。     

快速光电探测器脉冲响应的电光取样测量

建立了半导体激光器电光取样系统。选择１．３μｍ，ＩｎＧａＡｓ增益开关半导体激光器作为取样光源，利用微带ＧａＡｓ衬底的纵向电光效应作为电光取样器，测量了ＩｎＧａＡｓ／ＩｎＰ雪崩二极管的脉冲响应特性。分析表明，本系统具有０．３５ｍＶ／√Ｈｚ的电压灵敏度和９ｐｓ的时间分辨率。     

单模光纤中Raman光放大

本文报道在单模光纤中，背向受激拉曼散射（ＢＳＲＳ）对通信光的光放大研究。所用泵浦源为声光０开关Ｎｄ￣（＋３）：ＹＡＧ激光器，工作波长１．０６４μｍ。信号源为ＩｎＧａＡｓＰ半导体激光器，工作波长１．３０μｍ。在１．３０μｍ处实现了Ｒａｍａｎ光放大，增益达１９．４ｄＢ以上，增益系数为２．３×１０￣（－１２）ｃｍ／ｗ。     

高功率梯度折射率分别限制异质结构InGaAs/AlGaAs应变双量子阱激光器

采用金属有机化合物气相淀积（ Ｍ Ｏ Ｃ Ｖ Ｄ）方法成功地研制了具有两对梯度折射率（ Ｇ Ｒ Ｉ Ｎ）异质结结构的 Ｉｎ Ｇａ Ａｓ／ Ａｌ Ｇａ Ａｓ 应变双量子阱激光器。该激光器的波长为 ９７０～９８２ ｎｍ ,室温连续工作阈值电流密度为１４０ Ａ／ｃｍ ２, 工作在０．９ Ａ 时单面连续输出光功率为５２０ ｍ Ｗ , 工作在２．０ Ａ 时, 连续输出光功率为 １．４９ Ｗ , 最高功率可达 ２．４ Ｗ 。微分量子效率高达０．８３ Ｗ ／ Ａ。     

1．55μm InGaAsP／InP应变量子阱激光器的LP－MOCVD生长

本文首次报导了生长温度为５５０℃，以三甲基镓（ＴＭＧａ）和三甲基铟（ＴＭＩｎ）为Ⅲ族源，用低压金属有机物气相沉积（ＬＦＭＯＣＶＤ〕技术，高质量１．６２ｕｍ和１．３ｕｍＩｎＧａＡｓＰ及Ｉｎ０．５７Ｇａ０．４３Ａｓ０．９８Ｐ０．０４／Ｉｎ０．７３Ｇａ０．２７Ａｓ０．６Ｐ０．４量子阶结构的生长，并给出了１．５５ｕｍＧａＡｓＰ／ＩｎＰ分别限制应变量子阱结构激光器的生长条件，激光器于室温下脉冲激射，其阈值电流密度为２．４ｋＡ／ｃｍ２。     

GaAs被动调QMd：激光器激光行性的研究

报道了用半导体材料ＧａＡｓ实现氙灯抽运Ｍｄ：ＹＡＧ激光器的被动调Ｑ运转,测量了激光器的阀值、脉冲宽度和输出能量。从ＧａＡｓ的能级结构出发,理论上研究了ＧａＡｓ材料的饱和吸收原理,建立了调Ｑ激光器速率方程并给出了数值解,对理论结果与实验结果进行了比较和讨论。     

SCH量子阱激光器的光学限制特性

通过对描述半导体激光器基本光波导方程的数值求解，分析了ＡｌＧａＡｓ／ＧａＡｓ分别限制量子阱激光器的光学限制特性，比较了不同缓变结构及多量子阱结构的光学限制因子。     

外腔半导体激光器中反馈耦合系数及介持吸收系数的测量

在室温下研究了外腔反馈对ＧａＡｌＡｓ量子阱半导体激光器阈值的影响，提出了测量实际反馈量及半导体激光器增益介质吸收系数的方法。利用所测反馈系数汲阈值得到了反馈耦合因子ｋ，驱动电流和增益之间的系数ζ以及实验所用半导体激光器增益介质的吸收系数。     

液相外延生长超薄有源层Al_xGa_（1－x）As／GaAs分别限制双异质结构激光器

报道超薄有源层ＡｌｘＧａ１－ｘＡＳ／ＧａＡｓ分别限制双异质结构半导体激光器的液相外延的过程。讨论了过冷度、生长温度和降温速率等对生长速率的影响。扫描电镜测得生长温度为６８０℃时，ＧａＡｓ有源层厚度可低至２５～３５ｎｍ。宽接触分别限制双异质结构ＬＤｓ的室温连续阈值电流密度多在７００～８００Ａ／ｃｍ２。     

高功率半导体激光泵浦源研究进展

高功率半导体激光器是固体激光器和光纤激光器的主要泵浦源。激光泵浦源性能的大幅提升直接促进了固体激光器、光纤激光器等激光器的发展。主要介绍了8xx nm和9xx nm系列半导体激光泵浦源的最新研究进展,8xx nm单管输出功率已达18.8 W@95μm,巴条输出功率已达1.8 kW(QCW),9xx nm单管输出功率已达35 W@100μm,巴条输出功率已达1.98 kW(QCW)。谱宽<1 nm的窄谱宽半导体激光器输出功率可达14 W。展望了未来半导体激光器泵浦源的发展趋势。     

High-power and widely tunable Tm-doped fiber laser at 2 μm

Efficient, high-power, and widely tunable Tm-doped fiber lasers cladding-pumped by diode lasers at 791 nm are demonstrated by use of an external cavity containing a diffraction grating. A maximum output power of 62 W is obtained at 2 004 nm for 140 W of launched pump power, corresponding to a slope efficiency of 48% with respect to launched pump power. The operating wavelength is tunable over 200 nm (1 895 to 2 109 nm), with >52 W of output power over a tuning range of 140 nm (1 926 to 2 070 nm). Prospects for further improvement in output power, lasing efficiency, and tuning range are considered.     

高稳定性低噪声的561 nm黄光激光器

鉴于目前561 nm激光器噪声较大,影响其实用性,提出一种高稳定性低噪声的561 nm黄光激光器。利用Nd:YAG晶体得到1 123 nm基频光,通过LBO晶体腔内倍频得到561 nm输出。理论分析了1 112 nm、1 116 nm与1 123 nm波长的阈值泵浦功率,提出1 123 nm的单波长振荡条件,确定谐振腔镀膜要求。根据理论计算,设计了合理的谐振腔膜系,通过抑制1 112 nm与1 116 nm谱线在谐振腔内的振荡实现1 123 nm谱线的单波长振荡。在泵浦功率为5 W时,实现了561 nm激光单波长输出,输出功率达到107 mW,功率不稳定性达到0.7%,噪声为1.2%。     

高功率、低量子亏损同带抽运掺镱光纤放大器

开展了基于同带抽运的高功率、低量子亏损的掺镱光纤放大器实验研究. 搭建了一台输出功率为21 W的1018 nm短波 长掺镱光纤激光器, 并利用其对双包层掺镱光纤进行同带抽运, 获得18.6 W的1080 nm波段激光输出, 光-光转换效率高达90.86%. 关键词： 光纤放大器 同带抽运 双包层光纤 转换效率     

High-power Tm~(3+)-doped all-fiber laser operating at1908 nm by a master oscillator power amplifier configuration with narrow spectral linewidth

We demonstrate a diode-pump Tm~(3+)t-doped all-fiber laser operating at 1908 nm based on a master oscillator power amplifier(MOPA) configuration. In our work, 152 W of laser output power is generated by a total incident pump power of 434 W at 790 nm, corresponding to the total optical efficiency of 35%. The laser wavelength is1908.29 nm. To the best of our knowledge, it is the highest output power reached around 1908 nm with such a narrow linewidth of 0.18 nm based on a MOPA configuration.     

Nd:YAG陶瓷与单晶4F3/2–4I13/2跃迁的弱谱线多波长激光性能对比

报道了基于半导体激光端面抽运Nd:YAG的⁴F_3/2–⁴I_13/2 跃迁的弱谱线多波长激光输出. 实验对比了透明陶瓷与单晶材料的激光输出特性, 表明透明陶瓷和单晶材料荧光谱强度的略微差异, 导致了多波长输出时相同两个波长之间的激光强度比在两种材料中的差异. 基于两种耦合输出镜片, 激光阈值都在2 W左右. 在13.5 W的抽运功率下, 基于Nd:YAG透明陶瓷获得了输出功率4.05 W、强度比1 :2的1338与1356 nm双波长激光和输出功率3.65 W、强度比13 : 1的1356与1414 nm 双波长激光, 斜率效率分别达33.9% 和31.9%.     

High-power and wavelength-tunable operation of an Er,Yb fiber laser using a volume Bragg grating

Efficient high-power operation of double-clad Er,Yb-doped fiber lasers with fixed-wavelength and wavelength-tunable resonator configurations using volume Bragg gratings for wavelength selection are reported. The fixed-wavelength laser yielded a maximum output power of 103 W at 1552.6 nm with a linewidth of ~0.4 nm (FWHM) for a launched pump power of 290 W at 976 nm. The wavelength-tunable laser could be tuned from 1528 to 1550 nm with a linewidth of 0.2 nm (FWHM) and with output power in the range 30-38 W for a launched pump power of 120 W. The prospects for further improvement in performance are considered.     

Continuous-wave simultaneous dual-wavelength and power-ratio-tunable operation at 1064 and 1342 nm in an Nd:LuVO<Subscript>4</Subscript> laser

This study demonstrates continuous-wave simultaneous dual-wavelength emission at 1064 and 1342 nm in an Nd:LuVO₄ laser by using a T-type cavity configuration. The output powers indicating a function of pump power had two evolutions depending on the strength of the completion of two wavelength emissions. One is that the output power increased linearly with the pump power in weak competition, and the output power and slope efficiency of 1064 and 1342 nm were 1.17 W and 13%, and 0.213 W and 2.8%, respectively. The other is that the extracting-energy capabilities of two wavelength emissions were close, and the evolution was not linear and the variations demonstrated multiple stages depending on the pump power. Moreover, the ratio of output power, defined as the output power at 1064 nm divided by that at 1342 nm, is tuned from 0 to 5.5 by varying the 1064 nm cavity, and equal output powers of 1064 and 1342 nm can be obtained at each pump power.     

All-Solid-State Nd:YAG Laser Operating at 1064nm and 1319nm under 885nm Thermally Boosted Pumping

We report a high-effciency Nd：YAG laser operating at 1064 nm and 1319nm, respectively, thermally boosted pumped by an all-solid-state Q-switched Ti：sapphire laser at 885 nm. The maximum outputs of 825.4 m W and 459.4mW, at 1064nm and 1319nm respectively, are obtained in a 8-ram-thick 1.1 at.% Nd：YAG crystal with 2.1 W of incident pump power at 885nm, leading to a high slope efficiency with respect to the absorbed pump power of 68.5% and 42.0%. Comparative results obtained by the traditional pumping at 808nm are presented, showing that the slope efficiency and the threshold with respect to the absorbed pump power at 1064nm under the 885nm pumping are 12.2% higher and 7.3% lower than those of 808rim pumping. At 1319nm, the slope efficiency and the threshold with respect to the absorbed pump power under 885nm pumping are 9.9% higher and 3.5% lower than those of 808 nm pumping. The heat generation operating at 1064 nm and 1319 nm is reduced by 19.8% and 11.1%, respectively.     

Continuous-wave all-solid-state 244 nm deep-ultraviolet laser source by fourth-harmonic generation of an optically pumped semiconductor laser using CsLiB6O10 in an external resonator

We report an all-solid-state laser system that generates over 200 mW cw at 244 nm. An optically pumped semiconductor laser is internally frequency doubled to 488 nm. The 488 nm output is coupled to an external resonator, where it is converted to 244 nm using a CsLiB(6)O(10) (CLBO) crystal. The output power is limited by the available power at 488 nm, and no noticeable degradation in output power was observed over a period of several hours.