Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor |
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| Authors: | DENG Jiang-Xia YAN Shi-Shen MEI Liang-Mo J P Liu B Altuncevahir V Chakka WANG Yong ZHANG Ze SUN Xiang-Cheng J Lian K Sun |
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| Affiliation: | School of Physics and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100Department of Physics, the University of Texas at Arlington, Box 19059, Arlington, Texas 76019, USAInstitute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100022Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA. |
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| Abstract: | Zn1-xFexO inhomogeneous oxide magnetic semiconductor films with high Fe concentration are prepared by sputtering, and fast annealing is carried out at different temperatures. It is found that magnetic properties are greatly modulated by controlling the composition inhomogeneity and subsequently fast annealing. Both ferromagnetic and paramagnetic components are found to coexist in the as-deposited Zn1-xFexO magnetic semiconductor. In particular, the antiferromagnetic coupling between the neighbouring local ferromagnetic regions is found in the as-deposited Zn0.23Fe0.77O film, and the antiferromagnetic coupling strength increases with increasing temperature from 110K to 300K. We believe that this unusual antiferromagnetic coupling is mediated by thermally activated hopping carriers. |
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| Keywords: | 75 50 Pp 75 50 Ee 73 61 Jc 68 37 Lp |
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