| Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System |
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| 作者姓名： | 胡跃辉 陈光华 周键儿 荣延栋 李瀛 宋雪梅 张文理 丁毅 高卓 马占杰 周杯恩 朱秀红 |
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| 作者单位： | [1]DepartmentofMaterialsScienceandEngineering,BeijingUniversityofTechnology,Beijing100022／／InstituteofJingdezhdenCeramic,Jingdezhen333001 [2]DepartmentofMaterialsScienceandEngineering,BeijingUniversityofTechnology,Beijing100022 [3]InstituteofJingdezhenCeramic,Jingdezhen333001 |
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| 摘 要： | We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9rain, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4 H2) = 20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508cm^-1. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5 at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 10^5.
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| 关 键 词： | 纳米硅薄膜 微波电子循环共振化学真空沉积 生长工艺 加氢处理 |
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