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Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters
引用本文:周炳卿,刘丰珍,张群芳,许颖,周玉琴,刘金龙,朱美芳.Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters[J].中国物理快报,2006,23(6):1638-1640.
作者姓名:周炳卿  刘丰珍  张群芳  许颖  周玉琴  刘金龙  朱美芳
作者单位:[1]Department of Physics, Inner Mongolia Normal University, Huhhot 010022 [2]Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100049 [3]Beijing Solar Energy Research Institute, Beijing 100083
基金项目:Supported by the National Basic Research Program of China under Grant No G2000028208, and the Natural Science Foundation of Inner Mongolia of China under Grant No 200308020104.
摘    要:The p-type microcrystalline silicon (μc-Si:H) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the μc- Si:Hp-layers on the performance of the heterojunction solar cells is investigated. Optimum μc-Si:H p-layer is obtained with hydrogen dil u tion ratio of 99.65 %, rf-power of 0. 08 W/cm^2 , gas phase doping ratio of 0. 125 %, and the p-layer thickness of 15nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.

关 键 词:异质结构  太阳能电池  微晶发射极  P形微晶硅
收稿时间:2005-12-20
修稿时间:2005-12-20

Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters
ZHOU Bing-Qing,LIU Feng-Zhen,ZHANG Qun-Fang,XU Ying,ZHOU Yu-Qin,LIU Jin-Long,ZHU Mei-Fang.Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters[J].Chinese Physics Letters,2006,23(6):1638-1640.
Authors:ZHOU Bing-Qing  LIU Feng-Zhen  ZHANG Qun-Fang  XU Ying  ZHOU Yu-Qin  LIU Jin-Long  ZHU Mei-Fang
Affiliation:Department of Physics, Inner Mongolia Normal University, Huhhot 010022 Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100049 Beijing Solar Energy Research Institute, Beijing 100083
Abstract:
Keywords:84  60  Jt  81  15  Gh  81  05  Cy
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