| Investigation of active-region doping on InAs/GaSb long wave infrared detectors |
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| 作者姓名： | 崔素宁 蒋洞微 孙矩 贾庆轩 李农 张璇 李勇 常发冉 王国伟 徐应强 牛智川 |
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| 作者单位： | State Key Laboratory for Superlattices and Microstructures;College of Materials Science and Opto-Electronic Technology;School of Energy and Environment Science;Center of Materials Science and Optoelectronics Engineering;Beijing Academy of Quantum Information Sciences |
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| 基金项目： | Project supported by the National Key Technology R&D Program of China(Grant No.2018YFA0209104);the Key R&D Program of Guangdong Province,China(Grant No.2018B030329001);the Major Program of the National Natural Science Foundation of China(Grant No.61790581)。 |
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| 摘 要： | The eight-band κ·p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10.5μm,and the best composition of M-structure in this type of device is calculated theoretically.In addition,we have also experimented on the devices designed with the best performance to investigate the effect of the active region p-type doping temperature on the quantum efficiency of the device.The results show that the modest active region doping temperature(Be:760℃)can improve the quantum efficiency of the device with the best performance,while excessive doping(Be:>760℃)is not conducive to improving the photo response.With the best designed structure and an appropriate doping concentration,a maximum quantum efficiency of 45% is achieved with a resistance-area product of 688?·cm^2,corresponding to a maximum detectivity of 7.35×10^11cm·Hz^1/2/W.
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| 关 键 词： | LONG-WAVELENGTH BARRIER design ABSORPTION region DOPING |
Investigation of active-region doping on InAs/GaSb long wave infrared detectors |
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| Su-Ning Cui,Dong-Wei Jiang,Ju Sun,Qing-Xuan Jia,Nong Li,Xuan Zhang,Yong Li,Fa-Ran Chang,Guo-Wei Wang,Ying-Qiang Xu,Zhi-Chuan Niu.Investigation of active-region doping on InAs/GaSb long wave infrared detectors[J].Chinese Physics B,2020(4):516-522. |
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| Authors: | Su-Ning Cui Dong-Wei Jiang Ju Sun Qing-Xuan Jia Nong Li Xuan Zhang Yong Li Fa-Ran Chang Guo-Wei Wang Ying-Qiang Xu Zhi-Chuan Niu |
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| Affiliation: | (State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China;School of Energy and Environment Science,Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology(Ministry of Education),Provincial Key Laboratory of Optoelectronic Information Technology,Yunnan Normal University,Kunming 650092,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China) |
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