| Effect of F doping on capacitance-voltage characteristics of SiCOH low-k films metal-insulator-semiconductor |
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| 作者姓名： | 叶超 宁兆元 |
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| 作者单位： | School of Physics Science and Technology,Jiangsu Key Laboratory of Thin Films,Soochow University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 10575074) |
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| 摘 要： | This paper investigates the capacitance-voltage(C-V) characteristics of F doping SiCOH low dielectric constant films metal-insulator-semiconductor structure.The F doping SiCOH films are deposited by decamethylcyclopentasiloxane(DMCPS) and trifluromethane(CHF3) electron cyclotron resonance plasmas.With the CHF3/DMCPS flow rate ratio from 0 to 0.52,the positive excursion of C-V curves and the increase of flat-band voltage VFB from 6.1 V to 32.2 V are obtained.The excursion of C-V curves and the shift of VFB are related to the change of defects density and type at the Si/SiCOH interface due to the decrease of Si and O concentrations,and the increase of F concentration.At the CHF3/DMCPS flow rate ratio is 0.12,the compensation of F-bonding dangling bond to Si dangling bond leads to a small VFB of 2.0 V.
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| 关 键 词： | F-SiCOH low-k dielectrics capacitance-voltage characteristic |
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