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Current-voltage and capacitance-voltage characteristics of Sn/p-Si Schottky diodes measured in the temperature range 80-320 K are presented and analysed. Anomalous strong temperature dependencies of the ideality factor and apparent barrier height were obtained. There was also a considerable difference between the apparent barrier heights obtained from current-voltage and capacitance-voltage characteristics. These anomalies are explained by the domination of the current by a high level of thermionic-field emission, and by the presence of deep levels near the Sn/Si interface, which yield a reduction of free hole concentration and a significant temperature dependence of the charge stored near the metal-semiconductor (MS) interface. The evaluation of temperature dependence of forward current for thermionic-field emission resulted in the following parameters: characteristic energy E00 = 9.8 meV, Schottky barrier height at zero bias Φb0 = 0.802 eV, bias coefficient of barrier height β = 0, and effective Richardson constant A* = 37.32 A cm−2 K−2. 相似文献
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Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient 下载免费PDF全文
In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing (PDA) in the oxygen ambient is studied. Atomic layer deposited (ALD) Al2O3 films with four different thickness values (5 nm, 7 nm, 9 nm, 11 rim) are deposited on InP substrates. The capacitance-voltage (C-V) measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy (XPS) data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface. 相似文献
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研究发展了用肖特基电容电压特性数值模拟确定调制掺杂AlxGa1-xN/GaN异质结中极化电荷的方法.在调制掺杂的Al0.22Ga0.78N/GaN异质结上制备了Pt肖特基接触,并对其进行了C-V测量.采用三维费米模型对调制掺杂的Al0.22Ga0.78N/GaN异质结上肖特基接触的C-V特性进行了数值模拟,分析了改变样品参数对C-V特性的影响.利用改变极化电荷、n-AlGaN
关键词:
xGa1-xN/GaN异质结')" href="#">AlxGa1-xN/GaN异质结
极化电荷
电容电压特性
数值模拟 相似文献
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研究发展了用肖特基电容 电压特性数值模拟确定调制掺杂AlxGa1 -xN GaN异质结中极化电荷的方法 .在调制掺杂的Al0 2 2 Ga0 78N GaN异质结上制备了Pt肖特基接触 ,并对其进行了C V测量 .采用三维费米模型对调制掺杂的Al0 2 2 Ga0 78N GaN异质结上肖特基接触的C V特性进行了数值模拟 ,分析了改变样品参数对C V特性的影响 .利用改变极化电荷、n AlGaN层掺杂浓度和肖特基势垒高度对C V曲线不同部分位置和形状影响不同 ,可以精确地求取极化电荷面密度 .通过模拟 ,得到Al0 2 2 Ga0 78N厚度为 45nm的调制掺杂Al0 2 2 Ga0 78N GaN异质结界面附近极化电荷面密度为 6 78× 10 1 2 cm- 2 . 相似文献
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结区的温度, 简称结温, 是发光二极管(LED) 的重要参数之一, 它对LED 器件的出光效率、光色、器件可靠性和寿命均有很大影响, 准确测量LED 器件的结温对制备LED 芯片、器件封装和应用有着重要的意义. 本文利用反向偏压下的LED的势垒电容随温度变化的特性, 提出了一种LED结温测量的新方法. 论文首先测量和分析了LED在室温下反向偏压时的电容-电压(C-V)曲线和不同反向偏压下的电容-温度(C-T)曲线, 结果表明, 在合适的偏压下, LED的电容随温度的增大而显著增加, 并呈现良好的线性关系. 在LED工作中监测其电容的变化, 并与C-T曲线进行对比, 实现了LED结温的测量, 其测量结果和传统的正向电压法的结果相对比, 两者符合较好. 最后, 利用上述方法测量了LED 在恒流和恒压条件下的结温的实时变化过程. 较传统的结温测量方法, 本方法的优点在于只须要一次定标测量, 且可实现LED在任意电压和电流下的结温测量. 相似文献
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本文针对铟锌氧化物薄膜晶体管(IZO TFT)的低频噪声特性与变频电容-电压特性展开试验研究,基于上述特性对有源层内局域态密度及其在禁带中的分布进行参数提取.首先,基于IZO TFT的亚阈区I-V特性提取器件表面势随栅源电压的变化关系.基于载流子数随机涨落模型,在考虑有源层内缺陷态俘获/释放载流子效应基础上,通过γ因子提取深能态陷阱的特征温度;基于沟道电流噪声功率谱密度及平带电压噪声功率谱密度的测量,提取IZO TFT有源层内局域态密度及其分布.试验结果表明,带尾态缺陷在禁带内随能量呈e指数变化趋势,其导带底密度N1TA约为3.42×10~(20)cm~(-3)·eV-,特征温度TTA约为135 K.随后,将C-V特性与线性区I-V特性相结合,对栅端寄生电阻、漏端寄生电阻、源端寄生电阻进行提取与分离.在考虑有源层内局域态所俘获电荷与自由载流子的情况下,基于变频C-V特性对IZO TFT有源层内局域态分布进行参数提取.试验结果表明,深能态与带尾态在禁带内随能量均呈e指数变化趋势,深能态在导带底密度NDA约为5.4×10~(15)cm~(-3)·eV~(-1),特征温度TDA约为711 K,而带尾态在导带底密度NTA约为1.99×10~(20)cm~(-3)·eV~(-1),特征温度TTA约为183 K.最后,对以上两种局域态提取方法进行对比与分析. 相似文献
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Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode 下载免费PDF全文
Photoluminescence (PL) measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy (SIMS), transmission electron microscope (TEM), and capacitance-voltage (C-V) measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results. 相似文献
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电化学C-V法是当前测量化合物半导体载流子浓度纵向分布的非常重要的方法。本文采用电化学C-V法研究了MOCVD生长的掺硅GaAs多层薄膜的载流子浓度的面分布和纵向分布,并对测试结果进行分析。研究表明电化学C-V法测得的载流子浓度数据可以为研究掺硅GaAs半导体材料载流子浓度工艺优化和改进提供重要指导依据。 相似文献