| High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching |
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| 作者姓名： | 张新创 侯斌 贾富春 芦浩 牛雪锐 武玫 张濛 杜佳乐 杨凌 马晓华 郝跃 |
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| 作者单位： | 1.School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;2.School of Microelectronics, Xidian University, Xi'an 710071, China |
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| 基金项目： | supported by the National Natural Science Foundation of China(Grant Nos.62090014,62188102,62104184,62104178,and 62104179);the Fundamental Research Funds for the Central Universities of China(Grant Nos.XJS201102,XJS211101,XJS211106,and ZDRC2002)。 |
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| 摘 要： | An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl2-only ACE and BCl3/Cl2ACE,respectively.The mixed radicals of BCl3/Cl2were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl3/Cl2ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.
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| 关 键 词： | AlGaN/GaN HEMTs recess etching low damage high power added efficiency |
| 收稿时间： | 2021-05-07 |
High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching |
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| Xinchuang Zhang,Bin Hou,Fuchun Jia,Hao Lu,Xuerui Niu,Mei Wu,Meng Zhang,Jiale Du,Ling Yang,Xiaohua Ma,Yue Hao.High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching[J].Chinese Physics B,2022,31(2):27301-027301. |
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| Authors: | Xinchuang Zhang Bin Hou Fuchun Jia Hao Lu Xuerui Niu Mei Wu Meng Zhang Jiale Du Ling Yang Xiaohua Ma Yue Hao |
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| Affiliation: | 1.School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;2.School of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | An atomic-level controlled etching (ACE) technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors (HEMTs) with high power added efficiency. We compare the recessed gate HEMTs with conventional etching (CE) based chlorine, Cl2-only ACE and BCl3/Cl2 ACE, respectively. The mixed radicals of BCl3/Cl2 were used as the active reactants in the step of chemical modification. For ensuring precise and controllable etching depth and low etching damage, the kinetic energy of argon ions was accurately controlled. These argon ions were used precisely to remove the chemical modified surface atomic layer. Compared to the HEMTs with CE, the characteristics of devices fabricated by ACE are significantly improved, which benefits from significant reduction of etching damage. For BCl3/Cl2 ACE recessed HEMTs, the load pull test at 17 GHz shows a high power added efficiency (PAE) of 59.8% with an output power density of 1.6 W/mm at Vd=10 V, and a peak PAE of 44.8% with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode. |
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| Keywords: | AlGaN/GaN HEMTs recess etching low damage high power added efficiency |
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