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Radiation induced inter-device leakage degradation |
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| Authors: | HU Zhi-Yuan LIU Zhang-Li SHAO Hua ZHANG Zheng-Xuan NING Bing-Xu CHEN Ming BI Da-Wei ZOU Shi-Chang |
| Affiliation: | HU Zhi-Yuan 1,2,1) LIU Zhang-Li 1,2 SHAO Hua 1 ZHANG Zheng-Xuan 1 NING Bing-Xu 1,2 CHEN Ming 1,2 BI Da-Wei 1 ZOU Shi-Chang 1 1 Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China 2 Graduate University of Chinese Academy of Sciences,Beijing 100049,China |
| Abstract: | The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide.The overall radiation response of these structures is determined by the trapped charge in the oxide.The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work,which demonstrates that the wor... |
| Keywords: | total ionizing dose shallow trench isolation PFD device 2-D simulation |
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