Hetero-Epitaxial Diamond Single Crystal Growth on Surface of cBN Single Crystals at High Pressure and High Temperature |
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| Authors: | GAO Feng JIA Xiao-Peng MA Hong-An GUO Wei LIU Xiao-Bing |
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| Affiliation: | National Lab of Superhard Material, Jilin University, Changchun 130012Institute of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454000 |
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| Abstract: | We report a new diamond synthesis process in which cubic boron nitride single crystals are used as seeds, Fe80Ni20 alloy powder is used as catalyst/solvent and natural flake-like graphite is used as the carbon source. The samples are investigated using laser Raman spectra and x-ray diffraction (XRD). Morphology of the sample is observed by a scanning electron microscope (SEM). Based on the measurement results, we conclude that diamond single crystals have grown on the cBN crystal seeds under the conditions of high temperature 1230°C and high pressure 4.8GPa. This work provides an original method for synthesis of high quality hetero-semiconductor with cBN and diamond single crystals, and paves the way for future development. |
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| Keywords: | 81 10 -h 61 50 -f 81 10 Jt |
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