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Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser
作者姓名:邵烨  李路  刘俊歧  刘峰奇  王占国
作者单位:Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
基金项目:Supported by the National Science Fund for Distinguished Young Scholars under Grant No 60525406, the National Basic Research Programme of China under Grant No 2006CB604903, and Key Project of the National Natural Science Foundation of China under Grant No 60136010.
摘    要:We report the low threshold current density operation of strain-compensated In0.64 Ga0.36As/In0.3sAl0.62As quantum cascade lasers emitting near 4.94 μm. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57kA/cm^2 at 80 K is achieved/or an uncoated 20-μm-wide and 2.5-mm-long laser.

关 键 词:激光  低阈值  密度  光学
收稿时间:2006-11-1
修稿时间:2006-11-01

Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser
SHAO Ye,LI Lu,LIU Jun-Qi,LIU Feng-Qi,WANG Zhan-Guo.Low Threshold Current Density Operation of Strain-Compensated Quantum Cascade Laser[J].Chinese Physics Letters,2007,24(3):717-720.
Authors:SHAO Ye  LI Lu  LIU Jun-Qi  LIU Feng-Qi  WANG Zhan-Guo
Affiliation:Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912 Beijing 100083
Abstract:
Keywords:42  55  Px  85  60  Bt  71  55  Eq  81  15  Hi
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