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Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films |
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| Authors: | WANG Liang-Ji ZHANG Shu-Ming WANG Yu-Tian JIANG De-Sheng ZHU Jian-Jun ZHAO De-Gang LIU Zong-Shun WANG Hui SHI Yong-Sheng WANG Hai LIU Su-Ying YANG Hui |
| Affiliation: | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 |
| Abstract: | A method for accurate determination of the curvature radius of semiconductor thin films is proposed. The curvature-induced broadening of the x-ray rocking curve (XRC) of a heteroepitaxially grown layer can be determined if the dependence of the full width at half maximum (FWHM) of XRC is measured as a function of the width of incident x-ray beam. It is found that the curvature radii of two GaN films grown on a sapphire wafer are different when they are grown under similar MOCVD conditions but have different values of layer thickness. At the same time, the dislocation-induced broadening of XRC and thus the dislocation density of the epitaxial film can be well calculated after the curvature correction. |
| Keywords: | 61 05 Cp 81 05 Ea |
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