Island-growth of SiCGe films on SiC |
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| Authors: | Li Lian-Bi Chen Zhi-Ming Lin Tao Pu Hong-Bin Li Qing-Min and Li Jia |
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| Affiliation: | Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China |
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| Abstract: | SiCGe ternary alloys have been grown on SiC by hot-wall low-pressurechemical vapour deposition. It has been found that the samplesexhibit an island configuration, and the island growth of SiCGeepilayer depends on the processing parameters such as the growthtemperature. When the growth temperature is comparatively low, theepilayer has two types of islands: one is spherical island; anotheris cascading triangular island. With the increase of the growthtemperature, the islands change from spherical to cascadingtriangular mode. The size and density of the islands depend on thegrowth duration and GeH$_{4}$ flow- ate. A longer growth time and alarger GeH$_{4}$ flow-rate can increase the size and density of theisland in the initial stage of the epitaxy. In our case, The optimalgrowth for a high density of uniform islands occurred at a growthtemperature of 1100℃ for 1-minute growth, with 10 SCCM GeH$_{4}$,resulting in a narrow size distribution (about 30 nm diameter) andhigh density (about $3.5\times10^{10}$ dots/cm$^{2})$. The growthfollows Stranski--Krastanov mode (2D to 3D mode), both of the islandsand the 2D growth layer have face-centred cubic structure, and thecritical thickness of the 2D growth layer is only 2.5 nm. |
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| Keywords: | SiC SiCGe island-growth hot-wall low-pressure chemical vapour deposition |
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