| The charge storage of the nc—Si layer |
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| 引用本文： | 戴敏,张林,鲍云,石建军,张铠,李伟,黄信凡,陈坤基.The charge storage of the nc—Si layer[J].中国物理 B,2002,11(9):944-947. |
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| 作者姓名： | 戴敏 张林 鲍云 石建军 张铠 李伟 黄信凡 陈坤基 |
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| 作者单位： | State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant Nos 90101020 and 60071019), the Natural Science Foundation of Jiangsu Province, China (Grant Nos BK2001028 and BG2001002), the State Key Programme of Basic Research of China (Grant No 2001CB610503), and in part by Korea MOST through TND Project. |
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| 摘 要： | Sandwiched structures (a-SiNx/a-Si/a-SiNx) have been fabricated by the plasma enhanced chemical vapour deposition technique. A Si nanocrystal (nc-Si) layer was formed by crystallization of an a-Si layer according to the constrained crystallization principle after quasi-static thermal annealing at 1100℃ for 30 min. Transmission electron microscopy (TEM) and Raman scattering spectroscopy clearly demonstrated that nc-Si grains were formed in the as-deposited a-Si layer after annealing. The density of nc-Si grains is about 1011cm-2 as shown by TEM photographs. Using capacitance－voltage (C－V) measurements we investigated the electrical characteristics of the sandwiched structures. The charge storage phenomenon of the nc-Si layer was observed from the shift of flat-band voltage (VFB) in C－V curves at a high frequency (1 MHz). We estimated the density of nc-Si grains to be about 1011cm-2 from the shift value of VFB, which is in agreement with the result of TEM photographs. At the same time, we found that the shift of VFB increased with the increase of the applied constant dc voltage or the thickness of the nc-Si layer.
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| 关 键 词： | nc-Si thermal annealing C－V characteristics charge storage |
| 收稿时间： | 2/2/2002 12:00:00 AM |
The charge storage of the nc-Si layer |
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| Dai Min,Zhang Lin,Bao Yun,Shi Jian-Jun,Chen Kai,Li Wei,Huang Xin-Fan and Chen Kun-Ji.The charge storage of the nc-Si layer[J].Chinese Physics B,2002,11(9):944-947. |
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| Authors: | Dai Min Zhang Lin Bao Yun Shi Jian-Jun Chen Kai Li Wei Huang Xin-Fan and Chen Kun-Ji |
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| Affiliation: | State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | Sandwiched structures (a-SiNx/a-Si/a-SiNx) have been fabricated by the plasma enhanced chemical vapour deposition technique. A Si nanocrystal (nc-Si) layer was formed by crystallization of an a-Si layer according to the constrained crystallization principle after quasi-static thermal annealing at 1100℃ for 30 min. Transmission electron microscopy (TEM) and Raman scattering spectroscopy clearly demonstrated that nc-Si grains were formed in the as-deposited a-Si layer after annealing. The density of nc-Si grains is about 1011cm-2 as shown by TEM photographs. Using capacitance－voltage (C－V) measurements we investigated the electrical characteristics of the sandwiched structures. The charge storage phenomenon of the nc-Si layer was observed from the shift of flat-band voltage (VFB) in C－V curves at a high frequency (1 MHz). We estimated the density of nc-Si grains to be about 1011cm-2 from the shift value of VFB, which is in agreement with the result of TEM photographs. At the same time, we found that the shift of VFB increased with the increase of the applied constant dc voltage or the thickness of the nc-Si layer. |
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| Keywords: | nc-Si thermal annealing C－V characteristics charge storage |
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