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Ion Cleaning of Facets for Improving the Reliability of High Power 980 nm Semiconductor Lasers
作者姓名:舒雄文  徐晨  田增霞  沈光地
作者单位:Beijing Opto-electronic Technology Laboratory, Beijing University of Technology, Beijing 100022
基金项目:Supported by the National Key Basic Research Plan of China under Grant No G200068302, the Beijing Education Committee Funding (KM200310005009), the Beijing Municipal Science & Technology Commission Funding (D0404003040221).
摘    要:

关 键 词:离子清洗  可靠性  半导体激光器  氩离子  保护薄膜  阈值  激光二极管
收稿时间:2005-09-06
修稿时间:2005-09-06

Ion Cleaning of Facets for Improving the Reliability of High Power 980 nm Semiconductor Lasers
SHU Xiong-Wen, XU Chen, TIAN Zeng-Xia, SHEN Guang-Di.Ion Cleaning of Facets for Improving the Reliability of High Power 980 nm Semiconductor Lasers[J].Chinese Physics Letters,2006,23(1):124-125.
Authors:SHU Xiong-Wen  XU Chen  TIAN Zeng-Xia  SHEN Guang-Di
Abstract:We report a simple and available way of improving the reliability of high power InGaAs 980 nm lasers by cleaning the facets using Ar ion before the protecting films have been coated. The Ar cleaning can remove the impurity and the oxide on the air-cleaved facets of laser diodes. It is proven that the way has marked effect on reducing the gradual degradation rate of laser diodes and improving the catastrophic-optical-damage threshold.
Keywords:
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