| Correlation between Light Emissions from Amorphous-Si：H/SiO2 and nc-Si/SiO2 Multilayers |
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| 引用本文： | 马忠元,韩培高,李卫,陈德嫒,魏德远,钱波,李伟,徐骏,徐岭,黄信凡,陈坤基,冯端.Correlation between Light Emissions from Amorphous-Si：H/SiO2 and nc-Si/SiO2 Multilayers[J].中国物理快报,2007,24(7):2064-2067. |
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| 作者姓名： | 马忠元 韩培高 李卫 陈德嫒 魏德远 钱波 李伟 徐骏 徐岭 黄信凡 陈坤基 冯端 |
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| 作者单位： | State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant Nos 60508009, 90301009, 60471021, 50472066, and 10574069, and the State Key Basic Research Programme of China under Grant No 2006CB932202. |
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| 摘 要： | We investigate the properties of light emission from amorphous-Si：H/SiO2 and nc-Si/SiO2 multilayers （MLs）. The size dependence of light emission is well exhibited when the a-Si：H sublayer thickness is thinner than 4 nm and the interface states are well passlvated by hydrogen. For the nc-Si/Si02 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail.
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| 关 键 词： | 光排放 无定型 Si：H/SiO2 nc-Si/SiO2 多层物理 |
| 收稿时间： | 2006-11-9 |
| 修稿时间： | 2006-11-09 |
Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers |
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| MA Zhong-Yuan,HAN Pei-Gao,LI Wei,CHEN De-Yuan,WEI De-Yuan,QIAN Bo,LI Wei,XU Jun,XU Ling,HUANG Xin-Fan,CHEN Kun-Ji,FENG Duan.Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers[J].Chinese Physics Letters,2007,24(7):2064-2067. |
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| Authors: | MA Zhong-Yuan HAN Pei-Gao LI Wei CHEN De-Yuan WEI De-Yuan QIAN Bo LI Wei XU Jun XU Ling HUANG Xin-Fan CHEN Kun-Ji FENG Duan |
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| Affiliation: | State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 |
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| Abstract: | We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4nm. The role of hydrogen and oxygen is discussed in detail. |
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| Keywords: | 73 21 73" target="_blank">Ac')">73 21 Ac 73 20 r 78" target="_blank">')"> 78 55 -m |
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