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Stage structure in cesium doped pentacene
Institution:1. Institute for Molecular Science, Myodaiji, Okazaki 444-8585, Japan;2. Department of Nanomaterial Science, Graduate School of Advanced Integration Science, Chiba University, Inage-ku, Chiba 263-8522, Japan;1. Center for Material Cycles and Waste Management Research, National Institute for Environmental Studies, 16-2, Onogawa, Tsukuba, Ibaraki, 305-8506, Japan;2. Hitachi Power Solutions Co., Ltd., 832-2, Horiguchi, Hitachinaka, Ibaraki, 312-0034, Japan;3. Nippon Steel Engineering Co., Ltd., 46-59, Nakabaru, Tobata-ku, Kitakyushu, Fukuoka, 804-8505, Japan;4. Mitsubishi Research Institute, Inc., 10-3, Nagatacho 2-chome, Chiyoda-ku, Tokyo, 100-8141, Japan;5. Department of Environmental Engineering, Graduate School of Engineering, Kyoto University, Cluster C, Kyoto Daigaku-Katsura, Nishikyo-ku, Kyoto, 615-8540, Japan;1. Radioactive Waste Disposal Research Division, Korea Atomic Energy Research Institute, Daedeok-daero 989-111, Yuseong-gu, Daejeon, 34057, South Korea;2. School of Materials Science and Engineering, Changwon National University, 20 Changwondaehak-ro, Changwon, Gyeongsangnam-do, 51140, South Korea;1. Australian Institute for Bioengineering and Nanotechnology, The University of Queensland, St Lucia, Brisbane, QLD 4072, Australia;2. Centre for Organic Photonics & Electronics, School of Chemistry and Molecular Biosciences, The University of Queensland, St Lucia, Brisbane, QLD 4072, Australia;3. Group for Molecular Engineering of Functional Materials, Institute of Chemical Sciences and Engineering, EPFL Valais Wallis, Rue de l’Industrie 17, 1951 Sion, Switzerland;4. School of Chemical Engineering, The University of Queensland, St Lucia, Brisbane, QLD 4072, Australia;5. Centre for Catalysis and Clean Energy, School of Environment and Science Griffith University Gold Coast, QLD 4222, Australia;6. JST-ERATO Yamauchi Materials Space-Tectonics Project and International Center for Materials Nanoarchitectonics (WPI-MANA) National Institute for Materials Science (NIMS) 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC;2. Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC;3. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan, ROC;4. Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan, ROC
Abstract:We have prepared the cesium doped pentacene film and have investigated the electrical properties, in order to investigate a new molecular conductive film based on pentacene. It was found that cesium is doped in the pentacene film and that electrical resistivity decreases drastically below 10 Ω cm. Moreover, in the doping process, we found the step-wise decrease of electrical resistivity. It is deduced from this result that the cesium doped pentacene forms stage structures. In addition, we have carried out the measurements of the X-ray diffraction pattern in the cesium doped pentacene film. It was found from these results that the cesium doped pentacene becomes a highly orientated intercalated conductive film. Furthermore, in the cesium doped pentacene we have observed the shift of (00l) diffraction peak to low diffraction angle. This result indicates that by doping of pentacene the c-axis lattice constant which is the length of the interval between the (001) planes becomes 1.59 nm in the stage-1 structure of the cesium doped pentacene.
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