Doped transition metal oxides: networks of local distortions correlated by elastic fields |
| |
| Affiliation: | 1. Department of Physics, Kakatiya University, Warangal, India;2. Ceramic Composite Materials Laboratory, Department of Physics, Sri Krishnadevaraya University, S.V. Puram, Anantapur 515 003, India;1. Department of Materials Science and Engineering, Tarbiat Modares University, PO Box 14115-143, Tehran, Iran;2. Department of Materials Engineering, Islamic Azad University, Najafabad Branch, Isfahan, Iran;1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, PR China;2. Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Wuhan, 430074, PR China;1. College of Communication Engineering, Chengdu University of Information Technology, Chengdu, 610225, China;2. School of Materials Science & Engineering, Chang''an University, Xi''an, 710061, China;3. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
| |
| Abstract: | We review a perspective of doped transition metal oxides as correlated electron materials governed by functional multiscale complexity. We emphasize several themes: the prevalence of intrinsic complexity realized in the coexistence or competition among broken-symmetry ground states; the origin of landscapes of spatio-temporal patterns in coupled spin, charge and lattice (orbital) degrees-of-freedom; the relevance of co-existing short- and long-range forces; and the importance of multiscale complexity for key materials properties, including multifunctional ‘electro-elastic’ materials. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
