Organic light emitting transistors |
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| Institution: | 1. Electrical Engineering Department, President University, Jl. Ki Hajar Dewantara, Jababeka Education Park, Cikarang Bekasi, West-Java 17550, Indonesia;2. Electronic and Computer Engineering Department, National Taiwan University of Science and Technology (NTUST), Da-an District, Taipei City 10607, Taiwan;1. Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;2. Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;3. Department of Chemistry, Indian Institute of Technology Guwahati, Guwahati 781039, Assam, India;4. Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur 721302, West Bengal, India |
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| Abstract: | Organic light emitting transistors which are vertically combined with the organic static induction transistor and organic light emitting diode are fabricated and the device characteristics depending on the structure of gate electrode are investigated. By optimizing the layer thickness and the size of slit-type Al gate electrode, high luminance modulation by low gate voltage as high as 1 V are obtained. The organic light emitting transistor described here is a suitable element for flexible sheet displays. |
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