Effect of dye dopants in poly(methylphenyl silane) light-emitting devices |
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| Institution: | 1. School of Materials Science and Engineering, and International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, PR China;2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA;3. IT4Innovations Center, VSB-Technical University of Ostrava, CZ-70833 Ostrava, Czech Republic;4. Theoretical Division, Los Alamos National Laboratory, Los Alamos, NM 87545, USA;1. Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193, Bellaterra, Spain;2. Nanomaterials Group, Department of Materials Science and Engineering, Tarbiat Modares University, Tehran, Iran;1. Department of Civil Engineering, Ningbo University, Ningbo, China;2. Department of Civil Engineering, The University of Hong Kong, Hong Kong, China;1. Department of Mechanical Engineering, Amity University Haryana, Gurugram 122413, India;2. Department of Computer Science Engineering, GL Bajaj Institute of Technology and Management, Gr. Noida 201306, India;1. Shenzhen Key Laboratory of Polymer Science and Technology, Guangdong Research Center for Interfacial Engineering of Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen, 518060, China;2. Institute of Semiconductor Manufacturing Research, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, Guangdong, China;3. Department of Mechanical Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, China;4. Songshan Lake Materials Laboratory Dongguan, Guangdong, 523808, China;1. School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea;2. Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom;3. Key Laboratory for Light-weight Materials, Nanjing Tech University, Nanjing 210009, China |
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| Abstract: | To investigate the inter-molecular energy transfer between polysilane and dye dopants, poly(methylphenylsilane)(PMPS) was used as a host material and perylene as the blue dopant. The structure of the devices is indium–tin oxide (ITO)/PEDOT:PSS(30 nm)/PMPS:perylene(dye dopant 0.1–1.0 mol%)(60 nm)/Alq3(20 nm)/LiF(0.5 nm)/Al(100 nm). Poly(3,4-ethylenedioxythiophene) (PEDOT):poly(4-styrenesulfonate) (PSS) is used as a buffer layer, tris(8-hydroxyquinoline)aluminum (Alq3) as hole transporting layer, LiF as hole injection layer. The device shows a luminance 810 cd/m2 at current density of 28 mA/cm2, luminous efficiency of 0.14 lm/W. The external quantum efficiency (EQE) is about 0.5% and EQE increased up to 0.52% by doping with single wall carbon nanotubes (SWNT) into the emissive layer. We found an efficient inter-molecular energy transfer from polysilane to dye dopants. Furthermore, using the polysilane and energy-matched dye dopants enable to fabricate the electroluminescence devices through wet processes. |
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