A dual band CMOS VCO with a balanced duty cycle buffer |
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| Institution: | 1. Department of Electronics Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, In-chon 402-751, South Korea;2. Samsung Electronics Co., San24 Nongseo-Ri, Giheung-Eup, Yongin-City, Gyeonggi-Do 449-711, South Korea;1. Chair of Macromolecular Chemistry, Institute of Chemistry, Division of Technical and Macromolecular Chemistry, Faculty of Natural Science II (Chemistry, Physics and Mathematics), Martin-Luther-University Halle-Wittenberg, Von-Danckelmann-Platz 4, Halle D-06120, Germany;2. Faculty of Physics, Dynamics of Condensed Systems, University of Vienna, Strudlhofgasse 4, Vienna 1090, Austria;1. Inner Mongolia University of Technology, Hohhot 010051, P. R. China;2. Key Laboratory of Theoretical and Computational Photochemistry Ministry of Education, College of Chemistry, Beijing Normal University, Beijing 100875, P. R. China;3. School of Radiation Medicine and Radiation Protection, Soochow University, Suzhou 215123, P. R. China;4. Integrated Materials Design Centre, School of Chemical Engineering, The University of New South Wales, NSW2052 Sydney, Australia;1. Department of Fine Chemistry, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;2. Department of Interdisciplinary Bio IT Materials, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;3. Department of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea;4. Convergence Program of Biomedical Engineering and Biomaterials, Seoul National University of Science and Technology, Seoul 139-743, Republic of Korea |
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| Abstract: | This paper proposes a dual band VCO with a standard 0.35 μm CMOS process to generate 1.07 and 2.07 GHz. The proposed VCO architecture with 50% duty cycle circuit and a half adder (HA) is able to produce a frequency two times higher than that of the conventional VCOs. The measurement results demonstrate that the gain of VCO and power dissipation are 561 MHz/V and 14.6 mW, respectively. The phase noises of the dual band VCO are measured to be −102.55 and −95.88 dBc/Hz at 2 MHz offset from 1.07 and 2.07 GHz, respectively. |
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