Studies on thin films of lead chalcogenides |
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| Institution: | 1. Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;2. Faculty of Engineering and Technology, Department of Applied Sciences and Humanities, Jamia Millia Islamia, New Delhi 110025, India;1. Beijing Engineering Research Centre of Sustainable Energy and Buildings, School of Environment and Energy Engineering, Beijing University of Civil Engineering and Architecture, Beijing 100044, PR China;2. Key Laboratory of Equipment and Energy-saving Technology on Food & Pharmaceutical Quality Processing, Storage and Transportation, China National Light Industry, Technical Institute of Physics and Chemistry CAS, Beijing 100190, PR China;1. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China;2. Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, China;3. Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, United States;4. Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, 475004, China;5. Beijing Computational Science Research Center, 100193, Beijing, China;1. School of Materials Science and Engineering, Beihang University, Beijing 100191, China;2. Advanced Materials Institute, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055, China;3. Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing 100875, China;4. CNPC Greatwall Drilling Company (GWDC), Beijing 100101, China;5. AVIC Beijing Inst Aeronaut Mat, Beijing 100095, China;1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA;2. U.S. Navy NSWC Dahlgren, King George, VA, 22448, USA;1. School of Microelectronics, Dalian University of Technology, Dalian, Liaoning province, China;2. School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK, 73019, USA;1. School of Materials Science & Engineering, Tianjin University of Technology, Tianjin, 300384, China;2. Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin University of Technology, Tianjin, 300384, China;3. Key Laboratory of Display Materials & Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin, 300384, China |
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| Abstract: | A good deal of information regarding the synthesis and opto–electro-structural properties of thin films of lead chalcogenides have been revealed. The development of laser technology had opened up new application for narrow gap lead salts and their alloys. The polycrystalline thin films were deposited onto optically plane and chemically clean glass substrates by vacuum evaporation technique. The films were thin, uniform, smooth and tightly adherent to the substrates.Optical absorption spectroscopy, X-ray diffraction technique and current–voltage characteristics method were used to characterize the films. The absorption coefficients and optical band gaps of films were determined by using FTIR spectrophotometer. The nature of sample, crystal structure and lattice parameters of films were found from X-ray diffractograms. The dc conductivities and activation energies of films were measured in temperature range 300–380 K. Schottky junctions of PbS, PbSe and PbTe with indium metal were made. The barrier heights and ideality factors of these metal–semiconductor junctions were determined by using I–V characteristics. |
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