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On the origin of 1.5 μm luminescence in porous silicon coated with sol–gel derived erbium-doped Fe2O3 films |
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| Authors: | N. V. Gaponenko A. V. Mudryi O. V. Sergeev M. Stepikhova L. Palmetshofer W. Jantsch J. C. Pivin B. Hamilton A. S. Baran A. I. Rat''ko |
| Affiliation: | a Belarusian State University of Informatics and Radioelectronics, P. Browski str. 6, 220027 Minsk, Belarus, Byelorussia b Institut für Halbleiterphysik, Johannens Kepler Universität Linz, A-4040 Linz-Auhof, Austria c Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, 91405 Orsay Campus, Orsay, France d University of Manchester, Institute of Science and Technology, Manchester H60 1QD, UK e Institute of General and Inorganic Chemistry, 220027 Minsk, Belarus |
| Abstract: | Sol–gel derived Fe2O3 films containing about 10 wt% of Er2O3 were deposited on porous silicon by dipping or by a spin-on technique followed by thermal processing at 1073 K for 15 min. The samples were characterized by means of PL, SEM and X-ray diffraction analyses. They exhibit strong room-temperature luminescence at 1.5 μm related to erbium in the sol–gel derived host. The luminescence intensity increases by a factor of 1000 when the samples are cooled from 300 to 4.2 K. After complete removal of the erbium-doped film by etching and partial etching the porous silicon, the erbium-related luminescence disappears. Following this, luminescence at 1.5 μm originating from optically active dislocations (“D-lines”) in porous silicon was detected. The influence of the conditions of synthesis on luminescence at 1.5 μm is discussed. |
| Keywords: | Porous silicon Erbium Sol–gel Photoluminescence |
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