| 基于肖特基栅共振隧穿三极管的器件模拟与实验分析 |
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| 引用本文： | 宋瑞良,毛陆虹,郭维廉,余长亮.基于肖特基栅共振隧穿三极管的器件模拟与实验分析[J].半导体学报,2008,29(6):1062-1065. |
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| 作者姓名： | 宋瑞良 毛陆虹 郭维廉 余长亮 |
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| 作者单位： | 天津大学电子信息工程学院,天津300072 |
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| 摘 要： | 通过流片,制作出肖特基栅共振隧穿三极管（SGRTT） .根据ATLAS软件的模拟发现,当发射极接地,集电极接外加偏压时,栅极电压对于SGRTT的电流起到明显的控制作用.当集电极接地,栅极电压会主要影响峰值电压,其原因是栅极电压和发射极、集电极的电场分布将会改变耗尽区的分布.实验测试结果对这种现象也予以证实.
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| 关 键 词： | 肖特基栅共振隧穿三极管 器件模拟 耗尽区 |
| 收稿时间： | 1/10/2008 9:03:48 AM |
| 修稿时间： | 3/8/2008 7:31:31 PM |
Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor |
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| Song Ruiliang,Mao Luhong,Guo Weilian and Yu Changliang.Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor[J].Chinese Journal of Semiconductors,2008,29(6):1062-1065. |
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| Authors: | Song Ruiliang Mao Luhong Guo Weilian and Yu Changliang |
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| Institution: | School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China;School of Electronic Information Engineering,Tianjin University,Tianjin 300072,China |
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| Abstract: | A Schottky gate resonant tunneling transistor (SGRTT) is fabricated.Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal.When the collector terminal is grounded,the gate voltages can control the peak voltage.As revealed by measurement results,the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region. |
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| Keywords: | Schottky gate resonant tunneling transistor device simulation depletion region |
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