Improvement of electrical properties of sol–gel derived ZnO:Ga films by infrared heating method |
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Authors: | Keh-moh Lin Yu-Yu Chen |
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Institution: | (1) Department of Mechanical Engineering, Southern Taiwan University, No.1, Nantai Str., Yung-Kang City, Tainan, 710, Taiwan, ROC |
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Abstract: | In this study, we investigated the influences of gallium concentration and a rapid thermal annealing process on the electrical
and optical properties of ZnO:Ga (GZO) films prepared by sol–gel method. Experimental data indicated that the preferential
growth directions of ZnO crystallites were the (002) and (103) axes. This phenomenon implied that the nucleation and growth
behaviors of ZnO crystallites were changed by the infrared heating procedure and monoethanolamine. Furthermore, since the
deposited sol films were heated simultaneously, evenly, and rapidly, dopant material Ga got the opportunity to replace Zn
instead of forming oxides embedded in grain boundary areas. Thus, carrier concentration of the GZO films can be considerably
enhanced while the mobility of the GZO films was not apparently affected in our experiments. It was also found that the carrier
concentration was not sensitive to Ga/Zn ratio even though higher Ga concentration led to lower mobility. The best sample
with a resistivity of 2.20 × 10−3 Ω cm and a transmittance of over 80% in visible region was achieved with 1.0 at.% Ga. |
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Keywords: | Zinc oxide Electrical properties Infrared heating Gallium doping Sol– gel |
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