Optical phonon spectrum of germanium quantum dots |
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| Authors: | A B Talochkin V A Markov A I Nikiforov S A Tiis |
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| Institution: | (1) Institute of Semiconductor Physics, Siberian Branch of the, Russian Academy of Sciences, 630090 Novosibirsk, Russia |
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| Abstract: | We have observed additional lines, shifted in both directions relative to the frequency of the bulk phonon of Ge, in the Raman
scattering spectra from optical phonons in germanium quantum dots. The observed phonon modes are shown to be due to the straining
of the quantum dots as a result of the lattice mismatch of the Ge and Si matrices. The observed frequency shifts, with allowance
for optical-phonon localization effects, make it possible to determine the sizes of the regions with different strain states
in the quantum dots.
Pis’ma Zh. éksp. Teor. Fiz. 70, No. 4, 279–283 (25 August 1999) |
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