半导体器件单粒子效应的加速器模拟实验

 着重描述了应用加速器开展半导体器件的单粒子效应实验研究的方法。采用金箔散射法可以降低加速器束流几个量级，从而满足半导体器件单粒子效应实验的要求。研制的弱流质子束流测量系统和建立的质子注量均匀性测量方法解决了质子注量的准确测量问题。实验测得静态随机存取存储器的质子单粒子翻转截面为10^-7 cm²·bit^-11量级，单粒子翻转重离子LET阈值为4～8MeV·cm²/mg，重离子单粒子翻转饱和截面为10^-7 cm²·bit^-1量级。

Accelerators simulation experiment on single event effects in semiconductor devices

Experimental methods are emphatically described for Single Event Effects (SEE) experiments on semiconductor devices using accelerators. The particle beam from the accelerator can be scattered and reduced by several orders of magnitude with an Au foil. A novel system is designed for measuring the very low proton beam and a method is founded for measuring the uniformity of the proton flux. The proton Single Event Upset (SEU) cross section is of the order of 10-14cm 2·bit-1 for Static Random Access Memories (SRAMs). The SEU heavy ion LET thresholds are 4～8MeV·cm 2·mg-1 and the saturation SEU cross sections are of the order of 10-7cm 2·bit-1. Hard error in single bit and functional error in SRAMs and Single Event Latch-up in 80C86 are observed in proton experiments.