首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Modification induced by proton irradiation in polyallyldiglycol carbonate (PADC)
Authors:S P Tripathy  R Mishra  K K Dwivedi  D T Khathing  S Ghosh  D Fink
Institution:

a Department of Physics, North-Eastern Hill University, Shillong-793 022, India

b Hahn–Meitner Institute, Glienicker Strasse 100, D-14109 Berlin, Germany

c Arunachal University, Rono Hills, Itanagar, Arunachal Pradesh 791111, India

Abstract:Swift heavy ions interact predominantly through inelastic scattering while traversing through any polymeric medium producing excited/ionised atoms. Beyond a certain threshold, they affect the lattice structure leading to remarkable flexibility in engineering many physical and mechanical properties of the polymer. Polyallyldiglycol carbonate (PADC) is a class of polymeric detectors which finds its applications in various fields. In the present work, PADC samples were irradiated by four different fluences (≈1012–1013 cm−2) of 62 MeV protons from heavy ion accelerator (ISL) at HMI, Berlin. The modifications in the proton irradiated polymers as a function of fluence have been studied through different characterisation techniques such as Fourier Transform IR, UV-Vis, Electron Spin resonance, Thermogravimetric analysis, Differential Scanning Calorimetry and Track studies. The optical band-gap was found to be constant while a decrease in transmittance of PADC was observed with the increase in proton fluence. The thermal stability of PADC was found to be an inverse function of fluence. Further, these proton irradiated PADCs were exposed to fission fragments from 252Cf source and the bulk etch-rate was improved with the increase in proton fluence and was found to be increased by 90% for the PADC irradiated at the highest fluence as compared to the pristine. Thus, proton irradiation has led to degradation of the polymer by chain scission converting it into an easily etchable material.
Keywords:PADC  Proton irradiation  Bulk etch-rate  Degradation  Thermal stability
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号