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Analysis of silicon light emission under breakdown condition using an indirect intraband model |
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| Authors: | Haddou El Ghazi Anouar Jorio Izeddine Zorkani |
| Affiliation: | aSolid State Physics Laboratory, Faculty of Sciences, Dhar El Mahrez, B.P. 1796, Fes-Atlas, Morocco bRegional Centre of Interface, Sidi Mohammed Ben Abdellah University, Fes, Morocco |
| Abstract: | The light emission from silicon (npn) emitter–base junctions under breakdown condition has been modelled. The model suggests an indirect intraband processes combined with self-absorption. Good agreement between simulated and measured electroluminescence (EL) spectra is shown which demonstrates that the model is simple and more consistent with fundamental physical device characteristics particularly in the spectral range studied (1.4–2 eV). |
| Keywords: | Silicon junctions Avalanche breakdown Electroluminescence Simulated spectrum |
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