Observation of grain growth in swift heavy ion irradiated NiO thin films |
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| Authors: | P Mallick Chandana Rath J K Dash R Biswal D C Agarwal D Behera D K Avasthi D Kanjilal P V Satyam and N C Mishra |
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| Institution: | (1) Nanostech Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India;(2) Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India;(3) Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany;(4) Institut d’Electronique du Solide et des Syst?mes, 23 rue du Loess, BP 20 CR, 67037 Strasbourg Cedex 2, France |
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| Abstract: | NiO thin films grown on Si(100) substrates by electron beam evaporation, were sintered at 500 °C and 700 °C. The films were
irradiated with 120 MeV Au9+ ions. Irradiation had different effects depending upon the initial microstructure of the films. Irradiation of the films
at a fluence of 3 × 1011 ions cm−2 leads to grain growth for the films sintered at 500 °C and grain fragmentation for the films sintered at 700 °C. At still
higher fluences of irradiation, grain size in 500 °C sintered film decreased, but the same improved in 700 °C sintered film.
Associated with the grain size, texturing of the films was also shown to undergo significant modifications under irradiation. |
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