Comprehensive heat exchange model for a semiconductor laser diode |
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Authors: | KP Pipe RJ Ram |
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Institution: | Res. Lab. of Electron., MIT, Cambridge, MA, USA; |
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Abstract: | By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices. |
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